BFQ19,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Case Connection :

COLLECTOR

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PSSO-F3

Surface Mount :

yes

Base Part Number :

BFQ19

Power - Max :

1W

Noise Figure (dB Typ @ f) :

3.3dB @ 500MHz

Reference Standard :

CECC

Additional Feature :

LOW NOISE

Power Dissipation-Max (Abs) :

0.5W

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Voltage - Collector Emitter Breakdown (Max) :

15V

Polarity/Channel Type :

NPN

Terminal Form :

Flat

Operating Temperature :

175°C TJ

Number of Terminations :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

25 @ 70mA 10V

Transistor Application :

AMPLIFIER

Transition Frequency :

5500MHz

Terminal Position :

Single

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Terminal Finish :

Tin (Sn)

Package / Case :

TO-243AA

Transistor Type :

NPN

JESD-609 Code :

e3

Published :

1997

Current - Collector (Ic) (Max) :

100mA

Power Dissipation Ambient-Max :

1W

Configuration :

Single

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Mounting Type :

Surface Mount

Frequency - Transition :

5.5GHz

Transistor Element Material :

SILICON

HTS Code :

8541.29.00.75

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Qualification Status :

Not Qualified