BFQ19SH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Transistor Type :

NPN

Case Connection :

COLLECTOR

Height :

1.5mm

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Max Breakdown Voltage :

15V

Transistor Application :

AMPLIFIER

RoHS Status :

ROHS3 Compliant

Frequency - Transition :

5.5GHz

Collector Emitter Voltage (VCEO) :

15V

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 70mA 8V

Package / Case :

TO-243AA

Collector Base Voltage (VCBO) :

20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Contact Plating :

Tin

Mounting Type :

Surface Mount

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

15V

Gain :

7dB

Element Configuration :

Single

Transition Frequency :

5500MHz

Max Frequency :

1.5GHz

Current - Collector (Ic) (Max) :

120mA

Highest Frequency Band :

L B

Number of Pins :

3

Halogen Free :

Halogen Free

Noise Figure (dB Typ @ f) :

3dB @ 1.8GHz

Packaging :

Tape and Reel (TR)

Polarity/Channel Type :

NPN

Emitter Base Voltage (VEBO) :

3V

Width :

2.5mm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Max Power Dissipation :

1W

Terminal Form :

Flat

Number of Elements :

1

Additional Feature :

LOW NOISE

Max Collector Current :

75mA

Mount :

Surface Mount

Operating Temperature :

150°C TJ

Factory Lead Time :

4 Weeks

Published :

2003

Length :

4.5mm