BFQ19SH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Highest Frequency Band :

L B

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Max Collector Current :

75mA

Emitter Base Voltage (VEBO) :

3V

Collector Emitter Voltage (VCEO) :

15V

Max Breakdown Voltage :

15V

Mounting Type :

Surface Mount

Length :

4.5mm

Collector Emitter Breakdown Voltage :

15V

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 70mA 8V

Published :

2003

Additional Feature :

LOW NOISE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

3

Gain :

7dB

Polarity/Channel Type :

NPN

Transition Frequency :

5500MHz

Max Power Dissipation :

1W

Width :

2.5mm

Terminal Form :

Flat

Case Connection :

COLLECTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

NPN

Number of Elements :

1

Number of Pins :

3

Transistor Element Material :

SILICON

Current - Collector (Ic) (Max) :

120mA

Transistor Application :

AMPLIFIER

Factory Lead Time :

4 Weeks

Operating Temperature :

150°C TJ

Noise Figure (dB Typ @ f) :

3dB @ 1.8GHz

Max Frequency :

1.5GHz

Lead Free :

Lead Free

Contact Plating :

Tin

Mount :

Surface Mount

Height :

1.5mm

Package / Case :

TO-243AA

Element Configuration :

Single

Frequency - Transition :

5.5GHz

Halogen Free :

Halogen Free

Collector Base Voltage (VCBO) :

20V