BFQ19SH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Element Configuration :

Single

Noise Figure (dB Typ @ f) :

3dB @ 1.8GHz

Packaging :

Tape and Reel (TR)

Length :

4.5mm

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 70mA 8V

Emitter Base Voltage (VEBO) :

3V

Transition Frequency :

5500MHz

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Highest Frequency Band :

L B

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

75mA

Collector Emitter Breakdown Voltage :

15V

Width :

2.5mm

Operating Temperature :

150°C TJ

Frequency - Transition :

5.5GHz

Terminal Form :

Flat

Case Connection :

COLLECTOR

Mounting Type :

Surface Mount

Number of Elements :

1

Max Breakdown Voltage :

15V

Number of Pins :

3

Current - Collector (Ic) (Max) :

120mA

Collector Emitter Voltage (VCEO) :

15V

Package / Case :

TO-243AA

Halogen Free :

Halogen Free

Factory Lead Time :

4 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Transistor Application :

AMPLIFIER

Published :

2003

Polarity/Channel Type :

NPN

Gain :

7dB

Lead Free :

Lead Free

Additional Feature :

LOW NOISE

Mount :

Surface Mount

Max Power Dissipation :

1W

Height :

1.5mm

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Contact Plating :

Tin

Transistor Type :

NPN

Collector Base Voltage (VCBO) :

20V

Max Frequency :

1.5GHz