BFQ19SH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Contact Plating :

Tin

Number of Pins :

3

Noise Figure (dB Typ @ f) :

3dB @ 1.8GHz

Max Breakdown Voltage :

15V

Gain :

7dB

Highest Frequency Band :

L B

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Polarity/Channel Type :

NPN

Case Connection :

COLLECTOR

Factory Lead Time :

4 Weeks

Operating Temperature :

150°C TJ

Halogen Free :

Halogen Free

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Mount :

Surface Mount

Length :

4.5mm

Transistor Application :

AMPLIFIER

Collector Emitter Breakdown Voltage :

15V

Emitter Base Voltage (VEBO) :

3V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Collector Emitter Voltage (VCEO) :

15V

Collector Base Voltage (VCBO) :

20V

Max Power Dissipation :

1W

Height :

1.5mm

Mounting Type :

Surface Mount

Additional Feature :

LOW NOISE

Max Collector Current :

75mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 70mA 8V

Width :

2.5mm

Transition Frequency :

5500MHz

Package / Case :

TO-243AA

Max Frequency :

1.5GHz

Published :

2003

Current - Collector (Ic) (Max) :

120mA

Frequency - Transition :

5.5GHz

Element Configuration :

Single

Terminal Form :

Flat

Transistor Type :

NPN

Number of Terminations :

3