BFQ19SH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Operating Temperature :

150°C TJ

Emitter Base Voltage (VEBO) :

3V

Polarity/Channel Type :

NPN

Transistor Application :

AMPLIFIER

Number of Elements :

1

Max Frequency :

1.5GHz

Published :

2003

Transition Frequency :

5500MHz

Collector Base Voltage (VCBO) :

20V

Max Breakdown Voltage :

15V

Collector Emitter Breakdown Voltage :

15V

Max Collector Current :

75mA

Gain :

7dB

Frequency - Transition :

5.5GHz

Terminal Form :

Flat

Number of Terminations :

3

Package / Case :

TO-243AA

Lead Free :

Lead Free

Max Power Dissipation :

1W

Additional Feature :

LOW NOISE

Halogen Free :

Halogen Free

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 70mA 8V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Contact Plating :

Tin

Collector Emitter Voltage (VCEO) :

15V

Factory Lead Time :

4 Weeks

Width :

2.5mm

Highest Frequency Band :

L B

Current - Collector (Ic) (Max) :

120mA

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Height :

1.5mm

Number of Pins :

3

Length :

4.5mm

Transistor Type :

NPN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

COLLECTOR

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Noise Figure (dB Typ @ f) :

3dB @ 1.8GHz