BFQ149,115
- Mfr.Part #
- BFQ149,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- RF TRANS PNP 15V 5GHZ SOT89-3
- Stock
- 2
- In Stock :
- 2
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - RF
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Base Part Number :
- BFQ149
- Packaging :
- Tape and Reel (TR)
- Terminal Position :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Noise Figure (dB Typ @ f) :
- 3.3dB @ 500MHz
- Package / Case :
- TO-243AA
- Polarity/Channel Type :
- PNP
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Highest Frequency Band :
- C B
- Pin Count :
- 3
- Power Dissipation-Max (Abs) :
- 1W
- Qualification Status :
- Not Qualified
- Terminal Form :
- Flat
- Terminal Finish :
- Tin (Sn)
- Transition Frequency :
- 5000MHz
- Transistor Type :
- PNP
- HTS Code :
- 8541.29.00.75
- Frequency - Transition :
- 5GHz
- Configuration :
- Single
- ECCN Code :
- EAR99
- Published :
- 1997
- Transistor Application :
- AMPLIFIER
- Case Connection :
- COLLECTOR
- Current - Collector (Ic) (Max) :
- 100mA
- Power Dissipation Ambient-Max :
- 1W
- JESD-30 Code :
- R-PSSO-F3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 70mA 10V
- Voltage - Collector Emitter Breakdown (Max) :
- 15V
- Power - Max :
- 1W
- Surface Mount :
- yes
- Reference Standard :
- CECC
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Temperature :
- 175°C TJ
- Datasheets
- BFQ149,115
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BFQ149,115 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from NXP USA Inc. stock available at
BFQ149,115 Description
The BFQ149,115 is a PNP 5 GHz wideband transistor. PNP transistor enclosed in a SOT89 package. It is designed to be used in SMD-based microwave amplifiers, such as radar systems and spectrum analyzers, as well as UHF applications such broadband aerial amplifiers (30 to 860 MHz).
BFQ149,115 Features
-
Circuits with greater energy efficiency are usually possible. For low-power applications (for example, voltage amplification) in particular, energy consumption can be very much less than for tubes.
-
Complementary devices available, providing design flexibility including complementary-symmetry circuits, not possible with vacuum tubes.
-
Very low sensitivity to mechanical shock and vibration, providing physical ruggedness and virtually eliminating shock-induced spurious signals (for example, microphonics in audio applications).
-
Not susceptible to breakage of a glass envelope, leakage, outgassing, and other physical damage.
-
No cathode heater (which produces the characteristic orange glow of tubes), reducing power consumption, eliminating delay as tube heaters warm-up, and immune from cathode poisoning and depletion.
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Very small size and weight, reducing equipment size.
-
Large numbers of extremely small transistors can be manufactured as a single integrated circuit.
-
Low operating voltages compatible with batteries of only a few cells.
BFQ149,115 Applications
-
as a switch
-
as an amplifier
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