APTM50HM75SCTG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Power Dissipation :

357W

RoHS Status :

RoHS Compliant

Case Connection :

Isolated

Avalanche Energy Rating (Eas) :

2500 mJ

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Feature :

Silicon Carbide (SiC)

DS Breakdown Voltage-Min :

500V

FET Type :

4 N-Channel (H-Bridge)

ECCN Code :

EAR99

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package / Case :

SP4

Packaging :

Bulk

Published :

1997

Terminal Form :

UNSPECIFIED

Turn On Delay Time :

18 ns

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Input Capacitance (Ciss) (Max) @ Vds :

5590pF @ 25V

Rise Time :

35ns

Max Power Dissipation :

357W

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Fall Time (Typ) :

77 ns

Terminal Position :

UPPER

Number of Terminations :

14

Gate to Source Voltage (Vgs) :

30V

Number of Elements :

4

Additional Feature :

AVALANCHE RATED

Rds On (Max) @ Id, Vgs :

90m Ω @ 23A, 10V

Number of Pins :

4

Mount :

Chassis Mount, Screw

Transistor Application :

SWITCHING

Pbfree Code :

yes

Radiation Hardening :

No

Continuous Drain Current (ID) :

46A

Turn-Off Delay Time :

87 ns

Factory Lead Time :

36 Weeks

Drain-source On Resistance-Max :

0.09Ohm

Drain to Source Voltage (Vdss) :

500V

Terminal Finish :

TIN SILVER COPPER

Pin Count :

14

JESD-609 Code :

e1

Operating Temperature :

-40°C~150°C TJ

Mounting Type :

Chassis Mount

Gate Charge (Qg) (Max) @ Vgs :

123nC @ 10V