APTM20HM20STG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Application :

SWITCHING

FET Feature :

Standard

Packaging :

Bulk

Radiation Hardening :

No

Transistor Element Material :

SILICON

Turn On Delay Time :

28 ns

Terminal Form :

UNSPECIFIED

Number of Pins :

4

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

SP4

FET Type :

4 N-Channel (H-Bridge)

Rds On (Max) @ Id, Vgs :

24m Ω @ 44.5A, 10V

Gate to Source Voltage (Vgs) :

30V

Pin Count :

14

Published :

1999

Pulsed Drain Current-Max (IDM) :

356A

Factory Lead Time :

36 Weeks

Case Connection :

Isolated

Drain to Source Voltage (Vdss) :

200V

Additional Feature :

AVALANCHE RATED

ECCN Code :

EAR99

Mounting Type :

Chassis Mount

Pbfree Code :

yes

DS Breakdown Voltage-Min :

200V

Rise Time :

56ns

Avalanche Energy Rating (Eas) :

2500 mJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Fall Time (Typ) :

99 ns

Mount :

Chassis Mount, Screw

Input Capacitance (Ciss) (Max) @ Vds :

6850pF @ 25V

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Power Dissipation :

357W

Turn-Off Delay Time :

81 ns

Continuous Drain Current (ID) :

89A

Max Power Dissipation :

357W

Gate Charge (Qg) (Max) @ Vgs :

112nC @ 10V

Operating Temperature :

-40°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

4

Terminal Position :

UPPER

Number of Terminations :

14