APTM10TDUM19PG

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Pins :

6

Case Connection :

Isolated

Pulsed Drain Current-Max (IDM) :

300A

Drain to Source Voltage (Vdss) :

100V

Number of Terminations :

21

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

6

Rds On (Max) @ Id, Vgs :

21m Ω @ 35A, 10V

FET Type :

6 N-Channel (3-Phase Bridge)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Input Capacitance (Ciss) (Max) @ Vds :

5100pF @ 25V

Operating Temperature :

-40°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

30V

Terminal Position :

UPPER

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

AVALANCHE RATED

Transistor Application :

SWITCHING

Mount :

Chassis Mount, Screw

Package / Case :

SP6

Vgs(th) (Max) @ Id :

4V @ 1mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

70A

Terminal Finish :

TIN SILVER COPPER

Avalanche Energy Rating (Eas) :

1500 mJ

Terminal Form :

UNSPECIFIED

JESD-30 Code :

R-XUFM-X21

Packaging :

Bulk

Gate Charge (Qg) (Max) @ Vgs :

200nC @ 10V

Configuration :

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

Mounting Type :

Chassis Mount

Pin Count :

21

DS Breakdown Voltage-Min :

100V

Drain-source On Resistance-Max :

0.021Ohm

FET Feature :

Standard

RoHS Status :

RoHS Compliant

Reach Compliance Code :

Unknown

Max Power Dissipation :

208W

JESD-609 Code :

e1

Power Dissipation :

208W