2N3866A

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Pbfree Code :

No

Number of Elements :

1

JESD-609 Code :

e0

Collector Emitter Breakdown Voltage :

30V

Configuration :

Single

Terminal Form :

Wire

Published :

2007

Transistor Element Material :

SILICON

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Collector Base Voltage (VCBO) :

60V

Terminal Finish :

Tin/Lead (Sn/Pb)

Power Dissipation :

1W

Collector Emitter Voltage (VCEO) :

30V

Packaging :

Bulk

Number of Terminations :

3

Transistor Type :

NPN

Frequency - Transition :

400MHz

Operating Temperature :

-65°C~200°C TJ

Package / Case :

TO-205AD, TO-39-3 Metal Can

DC Current Gain (hFE) (Min) @ Ic, Vce :

25 @ 50mA 5V

Max Power Dissipation :

1W

Mounting Type :

Through Hole

RoHS Status :

Non-RoHS Compliant

Emitter Base Voltage (VEBO) :

3.5V

Terminal Position :

BOTTOM

Max Collector Current :

400mA

Mount :

Through Hole

Frequency :

800MHz