2N3808

Manufacturer :

Central Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Voltage - Collector Emitter Breakdown (Max) :

60V

Packaging :

Bulk

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Form :

Wire

Configuration :

SEPARATE, 2 ELEMENTS

Power Dissipation-Max (Abs) :

0.5W

Number of Terminations :

6

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Frequency - Transition :

100MHz

Terminal Position :

BOTTOM

Transistor Type :

2 PNP (Dual)

RoHS Status :

Non-RoHS Compliant

Reach Compliance Code :

not_compliant

Power - Max :

600mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 1mA 5V

Terminal Finish :

Tin/Lead (Sn/Pb)

Published :

2017

Additional Feature :

LOW NOISE

Surface Mount :

No

Pbfree Code :

No

Transition Frequency :

100MHz

Operating Temperature (Max) :

175°C

ECCN Code :

EAR99

Polarity/Channel Type :

PNP

JESD-609 Code :

e0

Number of Elements :

2

HTS Code :

8541.21.00.95

Mounting Type :

Through Hole

Package / Case :

TO-78-6 Metal Can

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Current - Collector (Ic) (Max) :

50mA

JESD-30 Code :

O-MBCY-W6