2N3810A

Manufacturer :

Central Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Additional Feature :

LOW NOISE

RoHS Status :

Non-RoHS Compliant

Transistor Element Material :

SILICON

Number of Terminations :

6

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 1mA 5V

Terminal Form :

Wire

Configuration :

SEPARATE, 2 ELEMENTS

Power - Max :

600mW

HTS Code :

8541.21.00.95

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

O-MBCY-W6

Surface Mount :

No

Packaging :

Bulk

Transition Frequency :

100MHz

Transistor Application :

AMPLIFIER

Terminal Position :

BOTTOM

Polarity/Channel Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 100μA

Operating Temperature :

-65°C~200°C TJ

Mounting Type :

Through Hole

JESD-609 Code :

e0

Pin Count :

6

Qualification Status :

Not Qualified

Voltage - Collector Emitter Breakdown (Max) :

60V

Terminal Finish :

Tin/Lead (Sn/Pb)

Number of Elements :

2

Package / Case :

TO-78-6 Metal Can

Current - Collector (Ic) (Max) :

50mA

Frequency - Transition :

100MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector Cutoff (Max) :

10nA ICBO

Reach Compliance Code :

not_compliant

Transistor Type :

2 PNP (Dual)

ECCN Code :

EAR99

Published :

2013

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pbfree Code :

No