2N3810U

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Arrays

Transistor Element Material :

SILICON

Collector Emitter Breakdown Voltage :

60V

ECCN Code :

EAR99

Terminal Finish :

TIN LEAD

Number of Pins :

6

JESD-30 Code :

O-MBCY-W8

Mounting Type :

Through Hole

Max Power Dissipation :

350mW

Number of Terminations :

8

Power Dissipation :

350mW

JESD-609 Code :

e0

Transistor Type :

2 PNP (Dual)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-78-6 Metal Can

Pbfree Code :

No

Operating Temperature :

-65°C~200°C TJ

RoHS Status :

Non-RoHS Compliant

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Terminal Form :

Wire

Collector Emitter Voltage (VCEO) :

60V

Collector Base Voltage (VCBO) :

60V

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 1mA 5V

Radiation Hardening :

No

Factory Lead Time :

12 Weeks

Published :

2007

Emitter Base Voltage (VEBO) :

5V

Packaging :

Bulk

Mount :

Surface Mount, Through Hole

Polarity :

PNP

Terminal Position :

BOTTOM

Number of Elements :

2

Max Collector Current :

50mA

Vce Saturation (Max) @ Ib, Ic :

250mV @ 100μA, 1mA

Current - Collector Cutoff (Max) :

10μA ICBO