2N3810U

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Arrays

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Terminal Position :

BOTTOM

Package / Case :

TO-78-6 Metal Can

RoHS Status :

Non-RoHS Compliant

Current - Collector Cutoff (Max) :

10μA ICBO

Operating Temperature :

-65°C~200°C TJ

Max Power Dissipation :

350mW

Radiation Hardening :

No

Collector Emitter Breakdown Voltage :

60V

ECCN Code :

EAR99

Collector Emitter Voltage (VCEO) :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

TIN LEAD

Polarity :

PNP

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 1mA 5V

Emitter Base Voltage (VEBO) :

5V

Power Dissipation :

350mW

Number of Terminations :

8

Collector Base Voltage (VCBO) :

60V

Number of Pins :

6

Number of Elements :

2

JESD-609 Code :

e0

Published :

2007

JESD-30 Code :

O-MBCY-W8

Mount :

Surface Mount, Through Hole

Factory Lead Time :

12 Weeks

Mounting Type :

Through Hole

Transistor Type :

2 PNP (Dual)

Vce Saturation (Max) @ Ib, Ic :

250mV @ 100μA, 1mA

Packaging :

Bulk

Terminal Form :

Wire

Transistor Element Material :

SILICON

Pbfree Code :

No

Max Collector Current :

50mA