2N3810U

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Arrays

Power Dissipation :

350mW

Collector Base Voltage (VCBO) :

60V

Packaging :

Bulk

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

RoHS Status :

Non-RoHS Compliant

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 1mA 5V

Mount :

Surface Mount, Through Hole

Published :

2007

JESD-30 Code :

O-MBCY-W8

Collector Emitter Breakdown Voltage :

60V

Emitter Base Voltage (VEBO) :

5V

Number of Elements :

2

Number of Terminations :

8

Current - Collector Cutoff (Max) :

10μA ICBO

Terminal Position :

BOTTOM

Max Collector Current :

50mA

Factory Lead Time :

12 Weeks

Transistor Type :

2 PNP (Dual)

JESD-609 Code :

e0

ECCN Code :

EAR99

Package / Case :

TO-78-6 Metal Can

Max Power Dissipation :

350mW

Terminal Form :

Wire

Radiation Hardening :

No

Polarity :

PNP

Terminal Finish :

TIN LEAD

Collector Emitter Voltage (VCEO) :

60V

Pbfree Code :

No

Operating Temperature :

-65°C~200°C TJ

Number of Pins :

6

Vce Saturation (Max) @ Ib, Ic :

250mV @ 100μA, 1mA