2N3810L

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Arrays

Current - Collector Cutoff (Max) :

10μA ICBO

Collector Base Voltage (VCBO) :

60V

Terminal Form :

Wire

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-65°C~200°C TJ

Published :

2007

Package / Case :

TO-78-6 Metal Can

Transistor Type :

2 PNP (Dual)

Collector Emitter Breakdown Voltage :

60V

Factory Lead Time :

12 Weeks

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 1mA 5V

RoHS Status :

Non-RoHS Compliant

Power - Max :

350mW

Transistor Element Material :

SILICON

Lifecycle Status :

IN PRODUCTION (Last Updated: 2 weeks ago)

Vce Saturation (Max) @ Ib, Ic :

250mV @ 100μA, 1mA

Number of Pins :

6

ECCN Code :

EAR99

Collector Emitter Voltage (VCEO) :

250mV

Packaging :

Bulk

Terminal Position :

BOTTOM

Max Power Dissipation :

350mW

Pin Count :

8

JESD-30 Code :

O-MBCY-W8

Polarity/Channel Type :

PNP

Radiation Hardening :

No

Max Collector Current :

50mA

HTS Code :

8541.21.00.95

Number of Elements :

2

Mounting Type :

Through Hole

Number of Terminations :

8

Pbfree Code :

No

JESD-609 Code :

e0

Terminal Finish :

TIN LEAD

Configuration :

SEPARATE, 2 ELEMENTS