2N3810L

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Arrays

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Base Voltage (VCBO) :

60V

Vce Saturation (Max) @ Ib, Ic :

250mV @ 100μA, 1mA

Number of Elements :

2

JESD-609 Code :

e0

Transistor Element Material :

SILICON

Configuration :

SEPARATE, 2 ELEMENTS

Collector Emitter Breakdown Voltage :

60V

Mount :

Through Hole

Terminal Position :

BOTTOM

Radiation Hardening :

No

Lifecycle Status :

IN PRODUCTION (Last Updated: 2 weeks ago)

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 1mA 5V

HTS Code :

8541.21.00.95

Power - Max :

350mW

Published :

2007

Max Power Dissipation :

350mW

Collector Emitter Voltage (VCEO) :

250mV

Terminal Finish :

TIN LEAD

Packaging :

Bulk

Number of Terminations :

8

Number of Pins :

6

Package / Case :

TO-78-6 Metal Can

JESD-30 Code :

O-MBCY-W8

Transistor Type :

2 PNP (Dual)

Max Collector Current :

50mA

RoHS Status :

Non-RoHS Compliant

Polarity/Channel Type :

PNP

Factory Lead Time :

12 Weeks

Pbfree Code :

No

Mounting Type :

Through Hole

Terminal Form :

Wire

Pin Count :

8

Operating Temperature :

-65°C~200°C TJ

ECCN Code :

EAR99

Current - Collector Cutoff (Max) :

10μA ICBO