2N3810L

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Arrays

Transistor Element Material :

SILICON

Collector Emitter Voltage (VCEO) :

250mV

Number of Elements :

2

Number of Pins :

6

Packaging :

Bulk

Current - Collector Cutoff (Max) :

10μA ICBO

Polarity/Channel Type :

PNP

Configuration :

SEPARATE, 2 ELEMENTS

Package / Case :

TO-78-6 Metal Can

Terminal Position :

BOTTOM

HTS Code :

8541.21.00.95

Power - Max :

350mW

JESD-609 Code :

e0

Radiation Hardening :

No

Transistor Type :

2 PNP (Dual)

Operating Temperature :

-65°C~200°C TJ

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 1mA 5V

Factory Lead Time :

12 Weeks

Number of Terminations :

8

Vce Saturation (Max) @ Ib, Ic :

250mV @ 100μA, 1mA

Collector Base Voltage (VCBO) :

60V

Max Power Dissipation :

350mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

50mA

Collector Emitter Breakdown Voltage :

60V

Mounting Type :

Through Hole

ECCN Code :

EAR99

Terminal Finish :

TIN LEAD

Pbfree Code :

No

Terminal Form :

Wire

Published :

2007

Mount :

Through Hole

Pin Count :

8

Lifecycle Status :

IN PRODUCTION (Last Updated: 2 weeks ago)

JESD-30 Code :

O-MBCY-W8

RoHS Status :

Non-RoHS Compliant