2N3809

Manufacturer :

Central Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 1mA 5V

Qualification Status :

Not Qualified

Terminal Form :

Wire

Power Dissipation-Max (Abs) :

0.5W

Pbfree Code :

No

Polarity/Channel Type :

PNP

JESD-30 Code :

O-MBCY-W6

Number of Elements :

2

Additional Feature :

LOW NOISE

Transistor Type :

2 PNP (Dual)

Reach Compliance Code :

not_compliant

Configuration :

SEPARATE, 2 ELEMENTS

Package / Case :

TO-78-6 Metal Can

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Voltage - Collector Emitter Breakdown (Max) :

60V

Mounting Type :

Through Hole

Terminal Position :

BOTTOM

Current - Collector (Ic) (Max) :

50mA

Power - Max :

600mW

HTS Code :

8541.21.00.95

Transition Frequency :

100MHz

Transistor Element Material :

SILICON

Operating Temperature (Max) :

175°C

RoHS Status :

Non-RoHS Compliant

ECCN Code :

EAR99

Packaging :

Bulk

Published :

2017

Terminal Finish :

Tin/Lead (Sn/Pb)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Surface Mount :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Frequency - Transition :

100MHz

Number of Terminations :

6

JESD-609 Code :

e0