2N3810

Manufacturer :

Central Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 1mA 5V

Vce Saturation (Max) @ Ib, Ic :

250mV @ 100μA, 1mA

Lifecycle Status :

IN PRODUCTION (Last Updated: 3 weeks ago)

Radiation Hardening :

No

Terminal Form :

Wire

Pin Count :

8

Packaging :

Bulk

JESD-30 Code :

O-MBCY-W8

Terminal Position :

BOTTOM

Current - Collector Cutoff (Max) :

10μA ICBO

Collector Emitter Voltage (VCEO) :

60V

Transistor Element Material :

SILICON

Number of Terminations :

8

Mount :

Through Hole

Terminal Finish :

TIN LEAD

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

350mW

Number of Elements :

2

Polarity :

PNP

Transistor Type :

2 PNP (Dual)

Package / Case :

TO-78-6 Metal Can

RoHS Status :

Non-RoHS Compliant

Emitter Base Voltage (VEBO) :

5V

Number of Pins :

6

Collector Base Voltage (VCBO) :

60V

JESD-609 Code :

e0

Operating Temperature :

-65°C~200°C TJ

Pbfree Code :

No

Mounting Type :

Through Hole

Max Power Dissipation :

350mW

Factory Lead Time :

12 Weeks

Collector Emitter Breakdown Voltage :

60V

Transistor Application :

AMPLIFIER

Transition Frequency :

100MHz

Max Collector Current :

50mA

ECCN Code :

EAR99