2N3810

Manufacturer :

Central Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 1mA 5V

Terminal Finish :

TIN LEAD

Power Dissipation :

350mW

Collector Emitter Breakdown Voltage :

60V

Number of Elements :

2

Pin Count :

8

Transistor Element Material :

SILICON

JESD-609 Code :

e0

Polarity :

PNP

Vce Saturation (Max) @ Ib, Ic :

250mV @ 100μA, 1mA

Transition Frequency :

100MHz

Lifecycle Status :

IN PRODUCTION (Last Updated: 3 weeks ago)

Packaging :

Bulk

Factory Lead Time :

12 Weeks

Terminal Form :

Wire

Mount :

Through Hole

Operating Temperature :

-65°C~200°C TJ

RoHS Status :

Non-RoHS Compliant

Current - Collector Cutoff (Max) :

10μA ICBO

JESD-30 Code :

O-MBCY-W8

Pbfree Code :

No

Transistor Application :

AMPLIFIER

Collector Emitter Voltage (VCEO) :

60V

Number of Terminations :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Emitter Base Voltage (VEBO) :

5V

Package / Case :

TO-78-6 Metal Can

Number of Pins :

6

Max Power Dissipation :

350mW

Terminal Position :

BOTTOM

Max Collector Current :

50mA

Radiation Hardening :

No

Transistor Type :

2 PNP (Dual)

Mounting Type :

Through Hole

Collector Base Voltage (VCBO) :

60V