2N3810A

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Arrays

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 1mA 5V

Configuration :

SEPARATE, 2 ELEMENTS

Transistor Type :

2 PNP (Dual)

Packaging :

Bulk

Voltage - Collector Emitter Breakdown (Max) :

60V

HTS Code :

8541.21.00.95

Surface Mount :

No

Reach Compliance Code :

not_compliant

Additional Feature :

LOW NOISE

Number of Elements :

2

Package / Case :

TO-78-6 Metal Can

Terminal Form :

Wire

Operating Temperature :

-65°C~200°C TJ

Pbfree Code :

No

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 100μA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

6

Transistor Application :

AMPLIFIER

Transition Frequency :

100MHz

Number of Terminations :

6

JESD-609 Code :

e0

RoHS Status :

Non-RoHS Compliant

Polarity/Channel Type :

PNP

Power - Max :

600mW

Terminal Finish :

Tin/Lead (Sn/Pb)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

O-MBCY-W6

Published :

2013

Mounting Type :

Through Hole

Terminal Position :

BOTTOM

Frequency - Transition :

100MHz

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Collector Cutoff (Max) :

10nA ICBO

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Current - Collector (Ic) (Max) :

50mA