ZXTNS618MCTA
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- Mfr.Part #
- ZXTNS618MCTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- 8-WDFN Exposed Pad
- Datasheet
- Download
- Description
- TRANS NPN 20V 4.5A DFN3020B-8
- Stock
- 42
- In Stock ：
- 42
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN + Diode (Isolated)
- Peak Reflow Temperature (Cel) :
- 260
- Collector Base Voltage (VCBO) :
- 40V
- Polarity :
- NPN
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Element Configuration :
- Dual
- Number of Terminations :
- 8
- Transition Frequency :
- 140MHz
- Collector Emitter Breakdown Voltage :
- 20V
- REACH SVHC :
- No SVHC
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 7V
- Collector Emitter Voltage (VCEO) :
- 20V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Frequency :
- 140MHz
- Package / Case :
- 8-WDFN Exposed Pad
- Max Collector Current :
- 4.5A
- Gain Bandwidth Product :
- 140MHz
- Max Power Dissipation :
- 3W
- Published :
- 2016
- Base Part Number :
- ZXTNS618MC
- Current - Collector Cutoff (Max) :
- 25nA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2A 2V
- Packaging :
- Tape and Reel (TR)
- Pin Count :
- 3
- Number of Pins :
- 8
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 16 Weeks
- Power Dissipation :
- 2.45W
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Pbfree Code :
- yes
- JESD-609 Code :
- e4
- Mount :
- Surface Mount
- Collector Emitter Saturation Voltage :
- 8mV
- ECCN Code :
- EAR99
- Continuous Collector Current :
- 4.5A
- Mounting Type :
- Surface Mount
- Max Breakdown Voltage :
- 20V
- Vce Saturation (Max) @ Ib, Ic :
- 270mV @ 125mA, 4.5A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- ZXTNS618MCTA
NPN + Diode (Isolated) -55°C~150°C TJ 25nA 1 Elements 8 Terminations SILICON 8-WDFN Exposed Pad Tape & Reel (TR) Surface Mount
ZXTNS618MCTA Overview
In this device, the DC current gain is 200 @ 2A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 8mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 270mV @ 125mA, 4.5A.A 4.5A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 7V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 140MHz.Input voltage breakdown is available at 20V volts.Single BJT transistor is possible for the collector current to fall as low as 4.5A volts at Single BJT transistors maximum.
ZXTNS618MCTA Features
the DC current gain for this device is 200 @ 2A 2V
a collector emitter saturation voltage of 8mV
the vce saturation(Max) is 270mV @ 125mA, 4.5A
the emitter base voltage is kept at 7V
a transition frequency of 140MHz
ZXTNS618MCTA Applications
There are a lot of Diodes Incorporated
ZXTNS618MCTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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