ZXTNS618MCTA
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- Mfr.Part #
- ZXTNS618MCTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- 8-WDFN Exposed Pad
- Datasheet
- Download
- Description
- TRANS NPN 20V 4.5A DFN3020B-8
- Stock
- 42
- In Stock ：
- 42
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 8
- Power Dissipation :
- 2.45W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Max Breakdown Voltage :
- 20V
- Polarity :
- NPN
- Current - Collector Cutoff (Max) :
- 25nA
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e4
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2A 2V
- Max Collector Current :
- 4.5A
- Packaging :
- Tape and Reel (TR)
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 20V
- Frequency :
- 140MHz
- Mounting Type :
- Surface Mount
- Base Part Number :
- ZXTNS618MC
- Published :
- 2016
- Gain Bandwidth Product :
- 140MHz
- Transition Frequency :
- 140MHz
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Base Voltage (VCBO) :
- 40V
- Number of Pins :
- 8
- Vce Saturation (Max) @ Ib, Ic :
- 270mV @ 125mA, 4.5A
- Pin Count :
- 3
- Continuous Collector Current :
- 4.5A
- Transistor Type :
- NPN + Diode (Isolated)
- Emitter Base Voltage (VEBO) :
- 7V
- REACH SVHC :
- No SVHC
- Peak Reflow Temperature (Cel) :
- 260
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 20V
- Factory Lead Time :
- 16 Weeks
- Transistor Application :
- SWITCHING
- Package / Case :
- 8-WDFN Exposed Pad
- Max Power Dissipation :
- 3W
- Collector Emitter Saturation Voltage :
- 8mV
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Element Configuration :
- Dual
- Datasheets
- ZXTNS618MCTA
NPN + Diode (Isolated) -55°C~150°C TJ 25nA 1 Elements 8 Terminations SILICON 8-WDFN Exposed Pad Tape & Reel (TR) Surface Mount
ZXTNS618MCTA Overview
In this device, the DC current gain is 200 @ 2A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 8mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 270mV @ 125mA, 4.5A.A 4.5A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 7V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 140MHz.Input voltage breakdown is available at 20V volts.Single BJT transistor is possible for the collector current to fall as low as 4.5A volts at Single BJT transistors maximum.
ZXTNS618MCTA Features
the DC current gain for this device is 200 @ 2A 2V
a collector emitter saturation voltage of 8mV
the vce saturation(Max) is 270mV @ 125mA, 4.5A
the emitter base voltage is kept at 7V
a transition frequency of 140MHz
ZXTNS618MCTA Applications
There are a lot of Diodes Incorporated
ZXTNS618MCTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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