ZXTN19055DZTA
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- Mfr.Part #
- ZXTN19055DZTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 55V 6A SOT89-3
- Stock
- 9,112
- In Stock ：
- 9,112
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- 250mV
- Frequency :
- 200MHz
- Max Breakdown Voltage :
- 55V
- Packaging :
- Tape and Reel (TR)
- Length :
- 4.6mm
- Peak Reflow Temperature (Cel) :
- 260
- Element Configuration :
- Single
- Width :
- 2.6mm
- Polarity/Channel Type :
- NPN
- Max Collector Current :
- 6A
- Max Power Dissipation :
- 2.1W
- Height :
- 1.6mm
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- REACH SVHC :
- No SVHC
- Base Part Number :
- ZXTN19055
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 55V
- Power Dissipation :
- 2.1W
- Pbfree Code :
- yes
- Terminal Form :
- Flat
- Factory Lead Time :
- 15 Weeks
- Voltage - Rated DC :
- 55V
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Mount :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 7V
- Transistor Type :
- NPN
- Number of Pins :
- 4
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Pin Count :
- 6
- Weight :
- 51.993025mg
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 600mA, 6A
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 150V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 10mA 2V
- Transition Frequency :
- 200MHz
- Package / Case :
- TO-243AA
- Number of Terminations :
- 6
- Current Rating :
- 6A
- JESD-30 Code :
- R-PDSO-F6
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Gain Bandwidth Product :
- 200MHz
- Collector Emitter Voltage (VCEO) :
- 55V
- Published :
- 2006
- Terminal Finish :
- Matte Tin (Sn)
- Terminal Position :
- Dual
- Datasheets
- ZXTN19055DZTA
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 6 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
ZXTN19055DZTA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 250 @ 10mA 2V DC current gain.As it features a collector emitter saturation voltage of 250mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 7V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 200MHz in the part.Single BJT transistor can be broken down at a voltage of 55V volts.When collector current reaches its maximum, it can reach 6A volts.
ZXTN19055DZTA Features
the DC current gain for this device is 250 @ 10mA 2V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 600mA, 6A
the emitter base voltage is kept at 7V
the current rating of this device is 6A
a transition frequency of 200MHz
ZXTN19055DZTA Applications
There are a lot of Diodes Incorporated
ZXTN19055DZTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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