ZXTN19055DZTA
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- Mfr.Part #
- ZXTN19055DZTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 55V 6A SOT89-3
- Stock
- 9,112
- In Stock ：
- 9,112
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Matte Tin (Sn)
- REACH SVHC :
- No SVHC
- Emitter Base Voltage (VEBO) :
- 7V
- Base Part Number :
- ZXTN19055
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Max Collector Current :
- 6A
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 600mA, 6A
- Lead Free :
- Lead Free
- Power Dissipation :
- 2.1W
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Height :
- 1.6mm
- Package / Case :
- TO-243AA
- Width :
- 2.6mm
- ECCN Code :
- EAR99
- Max Breakdown Voltage :
- 55V
- Voltage - Rated DC :
- 55V
- Peak Reflow Temperature (Cel) :
- 260
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Application :
- SWITCHING
- Gain Bandwidth Product :
- 200MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Polarity/Channel Type :
- NPN
- Published :
- 2006
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 10mA 2V
- Pbfree Code :
- yes
- Packaging :
- Tape and Reel (TR)
- Terminal Position :
- Dual
- Collector Emitter Breakdown Voltage :
- 55V
- Mount :
- Surface Mount
- Collector Emitter Saturation Voltage :
- 250mV
- JESD-609 Code :
- e3
- Weight :
- 51.993025mg
- Terminal Form :
- Flat
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 2.1W
- Number of Pins :
- 4
- Collector Emitter Voltage (VCEO) :
- 55V
- Element Configuration :
- Single
- Frequency :
- 200MHz
- Current Rating :
- 6A
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 15 Weeks
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 6
- JESD-30 Code :
- R-PDSO-F6
- Collector Base Voltage (VCBO) :
- 150V
- Transition Frequency :
- 200MHz
- Pin Count :
- 6
- Length :
- 4.6mm
- Datasheets
- ZXTN19055DZTA
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 6 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
ZXTN19055DZTA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 250 @ 10mA 2V DC current gain.As it features a collector emitter saturation voltage of 250mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 7V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 200MHz in the part.Single BJT transistor can be broken down at a voltage of 55V volts.When collector current reaches its maximum, it can reach 6A volts.
ZXTN19055DZTA Features
the DC current gain for this device is 250 @ 10mA 2V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 600mA, 6A
the emitter base voltage is kept at 7V
the current rating of this device is 6A
a transition frequency of 200MHz
ZXTN19055DZTA Applications
There are a lot of Diodes Incorporated
ZXTN19055DZTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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