ZXTN19055DZTA
- Mfr.Part #
- ZXTN19055DZTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 55V 6A SOT89-3
- Stock
- 9,112
- In Stock :
- 9,112
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Breakdown Voltage :
- 55V
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Finish :
- Matte Tin (Sn)
- Emitter Base Voltage (VEBO) :
- 7V
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Current Rating :
- 6A
- Height :
- 1.6mm
- Mount :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 600mA, 6A
- Weight :
- 51.993025mg
- Number of Terminations :
- 6
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Saturation Voltage :
- 250mV
- Max Collector Current :
- 6A
- Package / Case :
- TO-243AA
- Terminal Position :
- Dual
- Width :
- 2.6mm
- Terminal Form :
- Flat
- Polarity/Channel Type :
- NPN
- REACH SVHC :
- No SVHC
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 55V
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 55V
- Gain Bandwidth Product :
- 200MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 2.1W
- Factory Lead Time :
- 15 Weeks
- Pin Count :
- 6
- Transistor Type :
- NPN
- Power Dissipation :
- 2.1W
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 10mA 2V
- JESD-30 Code :
- R-PDSO-F6
- Length :
- 4.6mm
- Pbfree Code :
- yes
- Base Part Number :
- ZXTN19055
- Time@Peak Reflow Temperature-Max (s) :
- 40
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 4
- Collector Base Voltage (VCBO) :
- 150V
- Radiation Hardening :
- No
- Published :
- 2006
- Element Configuration :
- Single
- Voltage - Rated DC :
- 55V
- Lead Free :
- Lead Free
- Frequency :
- 200MHz
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Transition Frequency :
- 200MHz
- Number of Elements :
- 1
- Datasheets
- ZXTN19055DZTA

NPN -55°C~150°C TJ 50nA ICBO 1 Elements 6 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
ZXTN19055DZTA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 250 @ 10mA 2V DC current gain.As it features a collector emitter saturation voltage of 250mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 7V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 200MHz in the part.Single BJT transistor can be broken down at a voltage of 55V volts.When collector current reaches its maximum, it can reach 6A volts.
ZXTN19055DZTA Features
the DC current gain for this device is 250 @ 10mA 2V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 600mA, 6A
the emitter base voltage is kept at 7V
the current rating of this device is 6A
a transition frequency of 200MHz
ZXTN19055DZTA Applications
There are a lot of Diodes Incorporated
ZXTN19055DZTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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