ZXTN07012EFFTA
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- Mfr.Part #
- ZXTN07012EFFTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-23-3 Flat Leads
- Datasheet
- Download
- Description
- TRANS NPN 12V 4.5A SOT23F
- Stock
- 5,989
- In Stock ：
- 5,989
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Max Breakdown Voltage :
- 12V
- Transistor Type :
- NPN
- Lead Free :
- Lead Free
- Terminal Position :
- Dual
- Emitter Base Voltage (VEBO) :
- 7V
- Power - Max :
- 1.5W
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 12V
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Width :
- 1.7mm
- Collector Emitter Voltage (VCEO) :
- 12V
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 500 @ 100mA 2V
- Transistor Application :
- SWITCHING
- Height :
- 1mm
- Collector Emitter Saturation Voltage :
- 320mV
- Published :
- 2006
- Peak Reflow Temperature (Cel) :
- 260
- Pin Count :
- 3
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Transition Frequency :
- 220MHz
- Max Power Dissipation :
- 2W
- Package / Case :
- SOT-23-3 Flat Leads
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 20V
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 4.5A
- Vce Saturation (Max) @ Ib, Ic :
- 320mV @ 45mA, 4.5A
- Radiation Hardening :
- No
- Length :
- 3mm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- Matte Tin (Sn)
- Gain Bandwidth Product :
- 220MHz
- Power Dissipation :
- 2W
- Base Part Number :
- ZXTN07012E
- Mounting Type :
- Surface Mount
- Polarity/Channel Type :
- NPN
- Factory Lead Time :
- 15 Weeks
- Frequency :
- 220MHz
- Datasheets
- ZXTN07012EFFTA
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN SOT-23-3 Flat Leads Tape & Reel (TR) Surface Mount
ZXTN07012EFFTA Overview
This device has a DC current gain of 500 @ 100mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 320mV.A VCE saturation (Max) of 320mV @ 45mA, 4.5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.As you can see, the part has a transition frequency of 220MHz.A breakdown input voltage of 12V volts can be used.A maximum collector current of 4.5A volts is possible.
ZXTN07012EFFTA Features
the DC current gain for this device is 500 @ 100mA 2V
a collector emitter saturation voltage of 320mV
the vce saturation(Max) is 320mV @ 45mA, 4.5A
the emitter base voltage is kept at 7V
a transition frequency of 220MHz
ZXTN07012EFFTA Applications
There are a lot of Diodes Incorporated
ZXTN07012EFFTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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