ZXTN07012EFFTA
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- Mfr.Part #
- ZXTN07012EFFTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-23-3 Flat Leads
- Datasheet
- Download
- Description
- TRANS NPN 12V 4.5A SOT23F
- Stock
- 5,989
- In Stock ：
- 5,989
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Emitter Base Voltage (VEBO) :
- 7V
- Power - Max :
- 1.5W
- Mounting Type :
- Surface Mount
- Transistor Type :
- NPN
- Package / Case :
- SOT-23-3 Flat Leads
- Polarity/Channel Type :
- NPN
- Number of Pins :
- 3
- Width :
- 1.7mm
- Number of Elements :
- 1
- Element Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- Pin Count :
- 3
- Max Collector Current :
- 4.5A
- Transition Frequency :
- 220MHz
- Height :
- 1mm
- Factory Lead Time :
- 15 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 220MHz
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 2W
- Mount :
- Surface Mount
- Power Dissipation :
- 2W
- Collector Emitter Saturation Voltage :
- 320mV
- Pbfree Code :
- yes
- Published :
- 2006
- Operating Temperature :
- -55°C~150°C TJ
- Collector Base Voltage (VCBO) :
- 20V
- Frequency :
- 220MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Breakdown Voltage :
- 12V
- Terminal Finish :
- Matte Tin (Sn)
- Transistor Element Material :
- SILICON
- Terminal Position :
- Dual
- Vce Saturation (Max) @ Ib, Ic :
- 320mV @ 45mA, 4.5A
- Base Part Number :
- ZXTN07012E
- Length :
- 3mm
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 12V
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Max Breakdown Voltage :
- 12V
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 500 @ 100mA 2V
- ECCN Code :
- EAR99
- Datasheets
- ZXTN07012EFFTA
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN SOT-23-3 Flat Leads Tape & Reel (TR) Surface Mount
ZXTN07012EFFTA Overview
This device has a DC current gain of 500 @ 100mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 320mV.A VCE saturation (Max) of 320mV @ 45mA, 4.5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.As you can see, the part has a transition frequency of 220MHz.A breakdown input voltage of 12V volts can be used.A maximum collector current of 4.5A volts is possible.
ZXTN07012EFFTA Features
the DC current gain for this device is 500 @ 100mA 2V
a collector emitter saturation voltage of 320mV
the vce saturation(Max) is 320mV @ 45mA, 4.5A
the emitter base voltage is kept at 7V
a transition frequency of 220MHz
ZXTN07012EFFTA Applications
There are a lot of Diodes Incorporated
ZXTN07012EFFTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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