ZXTN07012EFFTA
- Mfr.Part #
- ZXTN07012EFFTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-23-3 Flat Leads
- Datasheet
- Download
- Description
- TRANS NPN 12V 4.5A SOT23F
- Stock
- 5,989
- In Stock :
- 5,989
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Terminal Finish :
- Matte Tin (Sn)
- Operating Temperature :
- -55°C~150°C TJ
- Polarity/Channel Type :
- NPN
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Mount :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 320mV @ 45mA, 4.5A
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 7V
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 12V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Frequency :
- 220MHz
- Number of Pins :
- 3
- Length :
- 3mm
- Max Breakdown Voltage :
- 12V
- Transistor Type :
- NPN
- Package / Case :
- SOT-23-3 Flat Leads
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 2W
- Lead Free :
- Lead Free
- Power - Max :
- 1.5W
- Terminal Position :
- Dual
- Factory Lead Time :
- 15 Weeks
- Power Dissipation :
- 2W
- Collector Emitter Breakdown Voltage :
- 12V
- Width :
- 1.7mm
- Peak Reflow Temperature (Cel) :
- 260
- Base Part Number :
- ZXTN07012E
- Transition Frequency :
- 220MHz
- Gain Bandwidth Product :
- 220MHz
- Collector Base Voltage (VCBO) :
- 20V
- Published :
- 2006
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 500 @ 100mA 2V
- Element Configuration :
- Single
- Height :
- 1mm
- Max Collector Current :
- 4.5A
- Collector Emitter Saturation Voltage :
- 320mV
- Pin Count :
- 3
- Datasheets
- ZXTN07012EFFTA

NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN SOT-23-3 Flat Leads Tape & Reel (TR) Surface Mount
ZXTN07012EFFTA Overview
This device has a DC current gain of 500 @ 100mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 320mV.A VCE saturation (Max) of 320mV @ 45mA, 4.5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.As you can see, the part has a transition frequency of 220MHz.A breakdown input voltage of 12V volts can be used.A maximum collector current of 4.5A volts is possible.
ZXTN07012EFFTA Features
the DC current gain for this device is 500 @ 100mA 2V
a collector emitter saturation voltage of 320mV
the vce saturation(Max) is 320mV @ 45mA, 4.5A
the emitter base voltage is kept at 7V
a transition frequency of 220MHz
ZXTN07012EFFTA Applications
There are a lot of Diodes Incorporated
ZXTN07012EFFTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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