ZXTN07012EFFTA
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- Mfr.Part #
- ZXTN07012EFFTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-23-3 Flat Leads
- Datasheet
- Download
- Description
- TRANS NPN 12V 4.5A SOT23F
- Stock
- 5,989
- In Stock ：
- 5,989
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Terminal Position :
- Dual
- Vce Saturation (Max) @ Ib, Ic :
- 320mV @ 45mA, 4.5A
- Factory Lead Time :
- 15 Weeks
- RoHS Status :
- ROHS3 Compliant
- Length :
- 3mm
- Width :
- 1.7mm
- Gain Bandwidth Product :
- 220MHz
- Number of Elements :
- 1
- Transition Frequency :
- 220MHz
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Transistor Application :
- SWITCHING
- Transistor Type :
- NPN
- Max Power Dissipation :
- 2W
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 500 @ 100mA 2V
- Power Dissipation :
- 2W
- Collector Base Voltage (VCBO) :
- 20V
- Terminal Finish :
- Matte Tin (Sn)
- Power - Max :
- 1.5W
- Peak Reflow Temperature (Cel) :
- 260
- Package / Case :
- SOT-23-3 Flat Leads
- Collector Emitter Saturation Voltage :
- 320mV
- Collector Emitter Voltage (VCEO) :
- 12V
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- Frequency :
- 220MHz
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 12V
- Emitter Base Voltage (VEBO) :
- 7V
- Max Collector Current :
- 4.5A
- Collector Emitter Breakdown Voltage :
- 12V
- Radiation Hardening :
- No
- Pin Count :
- 3
- Published :
- 2006
- Height :
- 1mm
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- ZXTN07012E
- Mount :
- Surface Mount
- Datasheets
- ZXTN07012EFFTA
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN SOT-23-3 Flat Leads Tape & Reel (TR) Surface Mount
ZXTN07012EFFTA Overview
This device has a DC current gain of 500 @ 100mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 320mV.A VCE saturation (Max) of 320mV @ 45mA, 4.5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.As you can see, the part has a transition frequency of 220MHz.A breakdown input voltage of 12V volts can be used.A maximum collector current of 4.5A volts is possible.
ZXTN07012EFFTA Features
the DC current gain for this device is 500 @ 100mA 2V
a collector emitter saturation voltage of 320mV
the vce saturation(Max) is 320mV @ 45mA, 4.5A
the emitter base voltage is kept at 7V
a transition frequency of 220MHz
ZXTN07012EFFTA Applications
There are a lot of Diodes Incorporated
ZXTN07012EFFTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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