ZXTN07012EFFTA
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- Mfr.Part #
- ZXTN07012EFFTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-23-3 Flat Leads
- Datasheet
- Download
- Description
- TRANS NPN 12V 4.5A SOT23F
- Stock
- 5,989
- In Stock ：
- 5,989
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- Dual
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- 320mV
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Power Dissipation :
- 2W
- Height :
- 1mm
- Max Breakdown Voltage :
- 12V
- Published :
- 2006
- Peak Reflow Temperature (Cel) :
- 260
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 4.5A
- Transistor Type :
- NPN
- Pbfree Code :
- yes
- Collector Base Voltage (VCBO) :
- 20V
- Transition Frequency :
- 220MHz
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 12V
- Package / Case :
- SOT-23-3 Flat Leads
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Matte Tin (Sn)
- Pin Count :
- 3
- Emitter Base Voltage (VEBO) :
- 7V
- Element Configuration :
- Single
- Frequency :
- 220MHz
- Length :
- 3mm
- Base Part Number :
- ZXTN07012E
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Voltage (VCEO) :
- 12V
- Polarity/Channel Type :
- NPN
- Max Power Dissipation :
- 2W
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 320mV @ 45mA, 4.5A
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 220MHz
- Power - Max :
- 1.5W
- Radiation Hardening :
- No
- Width :
- 1.7mm
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 15 Weeks
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 500 @ 100mA 2V
- Datasheets
- ZXTN07012EFFTA
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN SOT-23-3 Flat Leads Tape & Reel (TR) Surface Mount
ZXTN07012EFFTA Overview
This device has a DC current gain of 500 @ 100mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 320mV.A VCE saturation (Max) of 320mV @ 45mA, 4.5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.As you can see, the part has a transition frequency of 220MHz.A breakdown input voltage of 12V volts can be used.A maximum collector current of 4.5A volts is possible.
ZXTN07012EFFTA Features
the DC current gain for this device is 500 @ 100mA 2V
a collector emitter saturation voltage of 320mV
the vce saturation(Max) is 320mV @ 45mA, 4.5A
the emitter base voltage is kept at 7V
a transition frequency of 220MHz
ZXTN07012EFFTA Applications
There are a lot of Diodes Incorporated
ZXTN07012EFFTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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