ZXTN07012EFFTA
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- Mfr.Part #
- ZXTN07012EFFTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-23-3 Flat Leads
- Datasheet
- Download
- Description
- TRANS NPN 12V 4.5A SOT23F
- Stock
- 5,989
- In Stock ：
- 5,989
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Polarity/Channel Type :
- NPN
- Lead Free :
- Lead Free
- Mounting Type :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 20V
- Power - Max :
- 1.5W
- Number of Pins :
- 3
- Factory Lead Time :
- 15 Weeks
- Pbfree Code :
- yes
- Power Dissipation :
- 2W
- Pin Count :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 320mV @ 45mA, 4.5A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 500 @ 100mA 2V
- Max Collector Current :
- 4.5A
- Terminal Finish :
- Matte Tin (Sn)
- Radiation Hardening :
- No
- Base Part Number :
- ZXTN07012E
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Transistor Type :
- NPN
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Breakdown Voltage :
- 12V
- Length :
- 3mm
- Emitter Base Voltage (VEBO) :
- 7V
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 220MHz
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 220MHz
- Package / Case :
- SOT-23-3 Flat Leads
- RoHS Status :
- ROHS3 Compliant
- Width :
- 1.7mm
- Peak Reflow Temperature (Cel) :
- 260
- Frequency :
- 220MHz
- Transistor Application :
- SWITCHING
- Collector Emitter Saturation Voltage :
- 320mV
- Height :
- 1mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Dual
- Collector Emitter Voltage (VCEO) :
- 12V
- Published :
- 2006
- Max Breakdown Voltage :
- 12V
- Max Power Dissipation :
- 2W
- Mount :
- Surface Mount
- Datasheets
- ZXTN07012EFFTA
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN SOT-23-3 Flat Leads Tape & Reel (TR) Surface Mount
ZXTN07012EFFTA Overview
This device has a DC current gain of 500 @ 100mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 320mV.A VCE saturation (Max) of 320mV @ 45mA, 4.5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.As you can see, the part has a transition frequency of 220MHz.A breakdown input voltage of 12V volts can be used.A maximum collector current of 4.5A volts is possible.
ZXTN07012EFFTA Features
the DC current gain for this device is 500 @ 100mA 2V
a collector emitter saturation voltage of 320mV
the vce saturation(Max) is 320mV @ 45mA, 4.5A
the emitter base voltage is kept at 7V
a transition frequency of 220MHz
ZXTN07012EFFTA Applications
There are a lot of Diodes Incorporated
ZXTN07012EFFTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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