ZXTN07012EFFTA
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- Mfr.Part #
- ZXTN07012EFFTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-23-3 Flat Leads
- Datasheet
- Download
- Description
- TRANS NPN 12V 4.5A SOT23F
- Stock
- 5,989
- In Stock ：
- 5,989
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Height :
- 1mm
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Number of Terminations :
- 3
- Polarity/Channel Type :
- NPN
- Published :
- 2006
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Max Breakdown Voltage :
- 12V
- Element Configuration :
- Single
- Length :
- 3mm
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 7V
- Vce Saturation (Max) @ Ib, Ic :
- 320mV @ 45mA, 4.5A
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Lead Free :
- Lead Free
- Transistor Type :
- NPN
- Base Part Number :
- ZXTN07012E
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Matte Tin (Sn)
- Power Dissipation :
- 2W
- Peak Reflow Temperature (Cel) :
- 260
- JESD-609 Code :
- e3
- Factory Lead Time :
- 15 Weeks
- Terminal Position :
- Dual
- Collector Emitter Breakdown Voltage :
- 12V
- Pbfree Code :
- yes
- Package / Case :
- SOT-23-3 Flat Leads
- Radiation Hardening :
- No
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 500 @ 100mA 2V
- Mount :
- Surface Mount
- Frequency :
- 220MHz
- Max Power Dissipation :
- 2W
- Power - Max :
- 1.5W
- Operating Temperature :
- -55°C~150°C TJ
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 12V
- Collector Base Voltage (VCBO) :
- 20V
- Transition Frequency :
- 220MHz
- Pin Count :
- 3
- Gain Bandwidth Product :
- 220MHz
- Max Collector Current :
- 4.5A
- Collector Emitter Saturation Voltage :
- 320mV
- Width :
- 1.7mm
- Datasheets
- ZXTN07012EFFTA
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN SOT-23-3 Flat Leads Tape & Reel (TR) Surface Mount
ZXTN07012EFFTA Overview
This device has a DC current gain of 500 @ 100mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 320mV.A VCE saturation (Max) of 320mV @ 45mA, 4.5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.As you can see, the part has a transition frequency of 220MHz.A breakdown input voltage of 12V volts can be used.A maximum collector current of 4.5A volts is possible.
ZXTN07012EFFTA Features
the DC current gain for this device is 500 @ 100mA 2V
a collector emitter saturation voltage of 320mV
the vce saturation(Max) is 320mV @ 45mA, 4.5A
the emitter base voltage is kept at 7V
a transition frequency of 220MHz
ZXTN07012EFFTA Applications
There are a lot of Diodes Incorporated
ZXTN07012EFFTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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