ZXTN07012EFFTA
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- Mfr.Part #
- ZXTN07012EFFTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-23-3 Flat Leads
- Datasheet
- Download
- Description
- TRANS NPN 12V 4.5A SOT23F
- Stock
- 5,989
- In Stock ：
- 5,989
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power - Max :
- 1.5W
- Max Power Dissipation :
- 2W
- Operating Temperature :
- -55°C~150°C TJ
- Emitter Base Voltage (VEBO) :
- 7V
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Mount :
- Surface Mount
- Number of Pins :
- 3
- Max Breakdown Voltage :
- 12V
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Base Part Number :
- ZXTN07012E
- Transistor Type :
- NPN
- Gain Bandwidth Product :
- 220MHz
- Terminal Finish :
- Matte Tin (Sn)
- Polarity/Channel Type :
- NPN
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency :
- 220MHz
- Power Dissipation :
- 2W
- ECCN Code :
- EAR99
- Height :
- 1mm
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 500 @ 100mA 2V
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Saturation Voltage :
- 320mV
- Length :
- 3mm
- Max Collector Current :
- 4.5A
- Package / Case :
- SOT-23-3 Flat Leads
- Terminal Position :
- Dual
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 320mV @ 45mA, 4.5A
- Pin Count :
- 3
- Number of Elements :
- 1
- Factory Lead Time :
- 15 Weeks
- Collector Emitter Breakdown Voltage :
- 12V
- Collector Emitter Voltage (VCEO) :
- 12V
- Peak Reflow Temperature (Cel) :
- 260
- Collector Base Voltage (VCBO) :
- 20V
- RoHS Status :
- ROHS3 Compliant
- Width :
- 1.7mm
- Published :
- 2006
- Radiation Hardening :
- No
- Transition Frequency :
- 220MHz
- Datasheets
- ZXTN07012EFFTA
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN SOT-23-3 Flat Leads Tape & Reel (TR) Surface Mount
ZXTN07012EFFTA Overview
This device has a DC current gain of 500 @ 100mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 320mV.A VCE saturation (Max) of 320mV @ 45mA, 4.5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.As you can see, the part has a transition frequency of 220MHz.A breakdown input voltage of 12V volts can be used.A maximum collector current of 4.5A volts is possible.
ZXTN07012EFFTA Features
the DC current gain for this device is 500 @ 100mA 2V
a collector emitter saturation voltage of 320mV
the vce saturation(Max) is 320mV @ 45mA, 4.5A
the emitter base voltage is kept at 7V
a transition frequency of 220MHz
ZXTN07012EFFTA Applications
There are a lot of Diodes Incorporated
ZXTN07012EFFTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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