ZXTN07012EFFTA
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- Mfr.Part #
- ZXTN07012EFFTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-23-3 Flat Leads
- Datasheet
- Download
- Description
- TRANS NPN 12V 4.5A SOT23F
- Stock
- 5,989
- In Stock ：
- 5,989
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 12V
- Max Power Dissipation :
- 2W
- Factory Lead Time :
- 15 Weeks
- Collector Emitter Saturation Voltage :
- 320mV
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Matte Tin (Sn)
- Max Breakdown Voltage :
- 12V
- Mount :
- Surface Mount
- Power - Max :
- 1.5W
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Power Dissipation :
- 2W
- Vce Saturation (Max) @ Ib, Ic :
- 320mV @ 45mA, 4.5A
- Height :
- 1mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 500 @ 100mA 2V
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- NPN
- Max Collector Current :
- 4.5A
- Base Part Number :
- ZXTN07012E
- Emitter Base Voltage (VEBO) :
- 7V
- Width :
- 1.7mm
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 20V
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- Published :
- 2006
- Terminal Position :
- Dual
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Gain Bandwidth Product :
- 220MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Peak Reflow Temperature (Cel) :
- 260
- Transition Frequency :
- 220MHz
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Package / Case :
- SOT-23-3 Flat Leads
- Frequency :
- 220MHz
- Length :
- 3mm
- Pin Count :
- 3
- Collector Emitter Breakdown Voltage :
- 12V
- Number of Pins :
- 3
- Element Configuration :
- Single
- Datasheets
- ZXTN07012EFFTA
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN SOT-23-3 Flat Leads Tape & Reel (TR) Surface Mount
ZXTN07012EFFTA Overview
This device has a DC current gain of 500 @ 100mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 320mV.A VCE saturation (Max) of 320mV @ 45mA, 4.5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.As you can see, the part has a transition frequency of 220MHz.A breakdown input voltage of 12V volts can be used.A maximum collector current of 4.5A volts is possible.
ZXTN07012EFFTA Features
the DC current gain for this device is 500 @ 100mA 2V
a collector emitter saturation voltage of 320mV
the vce saturation(Max) is 320mV @ 45mA, 4.5A
the emitter base voltage is kept at 7V
a transition frequency of 220MHz
ZXTN07012EFFTA Applications
There are a lot of Diodes Incorporated
ZXTN07012EFFTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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