ZXTN07012EFFTA
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- Mfr.Part #
- ZXTN07012EFFTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-23-3 Flat Leads
- Datasheet
- Download
- Description
- TRANS NPN 12V 4.5A SOT23F
- Stock
- 5,989
- In Stock ：
- 5,989
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Published :
- 2006
- Power - Max :
- 1.5W
- Width :
- 1.7mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 500 @ 100mA 2V
- Number of Terminations :
- 3
- Pin Count :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 320mV @ 45mA, 4.5A
- Max Breakdown Voltage :
- 12V
- Polarity/Channel Type :
- NPN
- Max Collector Current :
- 4.5A
- Peak Reflow Temperature (Cel) :
- 260
- Factory Lead Time :
- 15 Weeks
- Collector Emitter Breakdown Voltage :
- 12V
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 20V
- Number of Elements :
- 1
- Mount :
- Surface Mount
- Terminal Finish :
- Matte Tin (Sn)
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- 7V
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 2W
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Collector Emitter Voltage (VCEO) :
- 12V
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tape and Reel (TR)
- Frequency :
- 220MHz
- Package / Case :
- SOT-23-3 Flat Leads
- ECCN Code :
- EAR99
- Length :
- 3mm
- Terminal Position :
- Dual
- Element Configuration :
- Single
- Transition Frequency :
- 220MHz
- Height :
- 1mm
- Base Part Number :
- ZXTN07012E
- Gain Bandwidth Product :
- 220MHz
- Transistor Type :
- NPN
- Collector Emitter Saturation Voltage :
- 320mV
- Max Power Dissipation :
- 2W
- Datasheets
- ZXTN07012EFFTA
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN SOT-23-3 Flat Leads Tape & Reel (TR) Surface Mount
ZXTN07012EFFTA Overview
This device has a DC current gain of 500 @ 100mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 320mV.A VCE saturation (Max) of 320mV @ 45mA, 4.5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.As you can see, the part has a transition frequency of 220MHz.A breakdown input voltage of 12V volts can be used.A maximum collector current of 4.5A volts is possible.
ZXTN07012EFFTA Features
the DC current gain for this device is 500 @ 100mA 2V
a collector emitter saturation voltage of 320mV
the vce saturation(Max) is 320mV @ 45mA, 4.5A
the emitter base voltage is kept at 7V
a transition frequency of 220MHz
ZXTN07012EFFTA Applications
There are a lot of Diodes Incorporated
ZXTN07012EFFTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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