ZXTN07012EFFTA
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- Mfr.Part #
- ZXTN07012EFFTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-23-3 Flat Leads
- Datasheet
- Download
- Description
- TRANS NPN 12V 4.5A SOT23F
- Stock
- 5,989
- In Stock ：
- 5,989
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 12V
- Terminal Position :
- Dual
- Max Power Dissipation :
- 2W
- Polarity/Channel Type :
- NPN
- Pbfree Code :
- yes
- Power Dissipation :
- 2W
- Gain Bandwidth Product :
- 220MHz
- Peak Reflow Temperature (Cel) :
- 260
- Width :
- 1.7mm
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 320mV @ 45mA, 4.5A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 3mm
- Max Collector Current :
- 4.5A
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- SOT-23-3 Flat Leads
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Base Part Number :
- ZXTN07012E
- Transistor Element Material :
- SILICON
- Transistor Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Breakdown Voltage :
- 12V
- Mount :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 7V
- Power - Max :
- 1.5W
- Transition Frequency :
- 220MHz
- Factory Lead Time :
- 15 Weeks
- Collector Base Voltage (VCBO) :
- 20V
- JESD-609 Code :
- e3
- Height :
- 1mm
- Published :
- 2006
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 500 @ 100mA 2V
- Max Breakdown Voltage :
- 12V
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- 320mV
- Terminal Finish :
- Matte Tin (Sn)
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Pin Count :
- 3
- Frequency :
- 220MHz
- Datasheets
- ZXTN07012EFFTA
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN SOT-23-3 Flat Leads Tape & Reel (TR) Surface Mount
ZXTN07012EFFTA Overview
This device has a DC current gain of 500 @ 100mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 320mV.A VCE saturation (Max) of 320mV @ 45mA, 4.5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.As you can see, the part has a transition frequency of 220MHz.A breakdown input voltage of 12V volts can be used.A maximum collector current of 4.5A volts is possible.
ZXTN07012EFFTA Features
the DC current gain for this device is 500 @ 100mA 2V
a collector emitter saturation voltage of 320mV
the vce saturation(Max) is 320mV @ 45mA, 4.5A
the emitter base voltage is kept at 7V
a transition frequency of 220MHz
ZXTN07012EFFTA Applications
There are a lot of Diodes Incorporated
ZXTN07012EFFTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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