ZXTN04120HFFTA
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- Mfr.Part #
- ZXTN04120HFFTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-23-3 Flat Leads
- Datasheet
- Download
- Description
- TRANS NPN DARL 120V 1A SOT23F
- Stock
- 2,961
- In Stock ：
- 2,961
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 900mV
- Radiation Hardening :
- No
- Operating Temperature :
- -55°C~150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 5mA, 2A
- Peak Reflow Temperature (Cel) :
- 260
- Max Power Dissipation :
- 1.5W
- REACH SVHC :
- No SVHC
- Max Breakdown Voltage :
- 120V
- Height :
- 1mm
- Terminal Finish :
- Matte Tin (Sn)
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 3
- Termination :
- SMD/SMT
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 140V
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Width :
- 1.7mm
- Frequency - Transition :
- 120MHz
- Factory Lead Time :
- 15 Weeks
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Transistor Type :
- NPN - Darlington
- Length :
- 3mm
- Published :
- 2007
- Max Collector Current :
- 1A
- Emitter Base Voltage (VEBO) :
- 10V
- Pbfree Code :
- yes
- Polarity :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 3000
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 3000 @ 1A 5V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Breakdown Voltage :
- 120V
- Current - Collector Cutoff (Max) :
- 10μA
- Collector Emitter Voltage (VCEO) :
- 120V
- Power Dissipation :
- 1.5W
- Transition Frequency :
- 120MHz
- Base Part Number :
- ZXTN04120H
- Mount :
- Surface Mount
- Package / Case :
- SOT-23-3 Flat Leads
- Datasheets
- ZXTN04120HFFTA
NPN - Darlington -55°C~150°C TJ 10μA 1 Elements 3 Terminations SILICON SOT-23-3 Flat Leads Tape & Reel (TR) Surface Mount
ZXTN04120HFFTA Overview
This device has a DC current gain of 3000 @ 1A 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 900mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 10V to achieve high efficiency.In this part, there is a transition frequency of 120MHz.As a result, it can handle voltages as low as 120V volts.The maximum collector current is 1A volts.
ZXTN04120HFFTA Features
the DC current gain for this device is 3000 @ 1A 5V
a collector emitter saturation voltage of 900mV
the vce saturation(Max) is 1.5V @ 5mA, 2A
the emitter base voltage is kept at 10V
a transition frequency of 120MHz
ZXTN04120HFFTA Applications
There are a lot of Diodes Incorporated
ZXTN04120HFFTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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