ZXTN19060CGTA
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- Mfr.Part #
- ZXTN19060CGTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 60V 7A SOT223-3
- Stock
- 5,963
- In Stock ：
- 5,963
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tape and Reel (TR)
- Max Power Dissipation :
- 5.3W
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 5.3W
- Frequency :
- 130MHz
- Power - Max :
- 3W
- Collector Emitter Breakdown Voltage :
- 60V
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- REACH SVHC :
- No SVHC
- Weight :
- 250.212891mg
- Radiation Hardening :
- No
- Terminal Finish :
- Matte Tin (Sn)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 130MHz
- Max Breakdown Voltage :
- 60V
- Factory Lead Time :
- 15 Weeks
- Number of Elements :
- 1
- Continuous Collector Current :
- 7A
- Package / Case :
- TO-261-4, TO-261AA
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 700mA, 7A
- Length :
- 6.7mm
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 2V
- Transistor Type :
- NPN
- Mount :
- Surface Mount
- Published :
- 2006
- Collector Base Voltage (VCBO) :
- 160V
- Polarity/Channel Type :
- NPN
- Terminal Form :
- Gull wing
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Gain Bandwidth Product :
- 130MHz
- Number of Pins :
- 4
- Pin Count :
- 4
- Emitter Base Voltage (VEBO) :
- 7V
- JESD-609 Code :
- e3
- Max Collector Current :
- 7A
- Collector Emitter Saturation Voltage :
- 50mV
- Terminal Position :
- Dual
- Lead Free :
- Lead Free
- Peak Reflow Temperature (Cel) :
- 260
- Height :
- 1.65mm
- Case Connection :
- COLLECTOR
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 60V
- Base Part Number :
- ZXTN19060C
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Width :
- 3.7mm
- Pbfree Code :
- No
- Number of Terminations :
- 4
- Datasheets
- ZXTN19060CGTA
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
ZXTN19060CGTA Overview
This device has a DC current gain of 200 @ 100mA 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 50mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of 7A is necessary for high efficiency.The base voltage of the emitter can be kept at 7V to achieve high efficiency.In this part, there is a transition frequency of 130MHz.As a result, it can handle voltages as low as 60V volts.The maximum collector current is 7A volts.
ZXTN19060CGTA Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of 50mV
the vce saturation(Max) is 300mV @ 700mA, 7A
the emitter base voltage is kept at 7V
a transition frequency of 130MHz
ZXTN19060CGTA Applications
There are a lot of Diodes Incorporated
ZXTN19060CGTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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