ZXTN19060CGTA
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- Mfr.Part #
- ZXTN19060CGTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 60V 7A SOT223-3
- Stock
- 5,963
- In Stock ：
- 5,963
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 7A
- Mounting Type :
- Surface Mount
- Frequency :
- 130MHz
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Gain Bandwidth Product :
- 130MHz
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 60V
- Max Breakdown Voltage :
- 60V
- Terminal Form :
- Gull wing
- Height :
- 1.65mm
- Number of Terminations :
- 4
- Transistor Type :
- NPN
- Length :
- 6.7mm
- Case Connection :
- COLLECTOR
- Lead Free :
- Lead Free
- Weight :
- 250.212891mg
- Mount :
- Surface Mount
- Power - Max :
- 3W
- Max Power Dissipation :
- 5.3W
- Terminal Position :
- Dual
- Pin Count :
- 4
- Terminal Finish :
- Matte Tin (Sn)
- Power Dissipation :
- 5.3W
- Width :
- 3.7mm
- Continuous Collector Current :
- 7A
- Peak Reflow Temperature (Cel) :
- 260
- Base Part Number :
- ZXTN19060C
- Package / Case :
- TO-261-4, TO-261AA
- JESD-609 Code :
- e3
- Collector Emitter Voltage (VCEO) :
- 60V
- Factory Lead Time :
- 15 Weeks
- REACH SVHC :
- No SVHC
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 700mA, 7A
- Collector Base Voltage (VCBO) :
- 160V
- Collector Emitter Saturation Voltage :
- 50mV
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Number of Pins :
- 4
- Pbfree Code :
- No
- Published :
- 2006
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 2V
- Radiation Hardening :
- No
- Polarity/Channel Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 7V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Transition Frequency :
- 130MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Datasheets
- ZXTN19060CGTA
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
ZXTN19060CGTA Overview
This device has a DC current gain of 200 @ 100mA 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 50mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of 7A is necessary for high efficiency.The base voltage of the emitter can be kept at 7V to achieve high efficiency.In this part, there is a transition frequency of 130MHz.As a result, it can handle voltages as low as 60V volts.The maximum collector current is 7A volts.
ZXTN19060CGTA Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of 50mV
the vce saturation(Max) is 300mV @ 700mA, 7A
the emitter base voltage is kept at 7V
a transition frequency of 130MHz
ZXTN19060CGTA Applications
There are a lot of Diodes Incorporated
ZXTN19060CGTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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