ZXTN19060CGTA
- Mfr.Part #
- ZXTN19060CGTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 60V 7A SOT223-3
- Stock
- 5,963
- In Stock :
- 5,963
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Number of Pins :
- 4
- Peak Reflow Temperature (Cel) :
- 260
- Max Collector Current :
- 7A
- Mount :
- Surface Mount
- Power Dissipation :
- 5.3W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 2V
- Mounting Type :
- Surface Mount
- Power - Max :
- 3W
- Factory Lead Time :
- 15 Weeks
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- 50mV
- Base Part Number :
- ZXTN19060C
- Transition Frequency :
- 130MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Breakdown Voltage :
- 60V
- Terminal Form :
- Gull wing
- Height :
- 1.65mm
- Number of Terminations :
- 4
- Pin Count :
- 4
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 5.3W
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 700mA, 7A
- RoHS Status :
- ROHS3 Compliant
- Continuous Collector Current :
- 7A
- Width :
- 3.7mm
- Terminal Position :
- Dual
- JESD-609 Code :
- e3
- REACH SVHC :
- No SVHC
- Pbfree Code :
- No
- Package / Case :
- TO-261-4, TO-261AA
- Polarity/Channel Type :
- NPN
- Case Connection :
- COLLECTOR
- Transistor Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 7V
- Operating Temperature :
- -55°C~150°C TJ
- Weight :
- 250.212891mg
- Gain Bandwidth Product :
- 130MHz
- Transistor Element Material :
- SILICON
- Frequency :
- 130MHz
- Collector Base Voltage (VCBO) :
- 160V
- Radiation Hardening :
- No
- Published :
- 2006
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- Matte Tin (Sn)
- Collector Emitter Voltage (VCEO) :
- 60V
- Length :
- 6.7mm
- Max Breakdown Voltage :
- 60V
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Datasheets
- ZXTN19060CGTA

NPN -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
ZXTN19060CGTA Overview
This device has a DC current gain of 200 @ 100mA 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 50mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of 7A is necessary for high efficiency.The base voltage of the emitter can be kept at 7V to achieve high efficiency.In this part, there is a transition frequency of 130MHz.As a result, it can handle voltages as low as 60V volts.The maximum collector current is 7A volts.
ZXTN19060CGTA Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of 50mV
the vce saturation(Max) is 300mV @ 700mA, 7A
the emitter base voltage is kept at 7V
a transition frequency of 130MHz
ZXTN19060CGTA Applications
There are a lot of Diodes Incorporated
ZXTN19060CGTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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