ZXTN10150DZTA
- Mfr.Part #
- ZXTN10150DZTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 150V 1A SOT89-3
- Stock
- 11,312
- In Stock :
- 11,312
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- JESD-30 Code :
- R-PSSO-F3
- Additional Feature :
- High Reliability
- Polarity/Channel Type :
- NPN
- JESD-609 Code :
- e3
- Qualification Status :
- Not Qualified
- Package / Case :
- TO-243AA
- Collector Emitter Breakdown Voltage :
- 150V
- Transition Frequency :
- 135MHz
- Number of Terminations :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Terminal Finish :
- Matte Tin (Sn)
- Published :
- 2016
- Collector Emitter Voltage (VCEO) :
- 150V
- Factory Lead Time :
- 15 Weeks
- Collector Base Voltage (VCBO) :
- 150V
- Max Power Dissipation :
- 1.5W
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Application :
- AMPLIFIER
- Mount :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 7V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Case Connection :
- COLLECTOR
- Current - Collector (Ic) (Max) :
- 1A
- Terminal Form :
- Flat
- Number of Pins :
- 4
- Terminal Position :
- Single
- Max Collector Current :
- 1A
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 1.5W
- Transistor Type :
- NPN
- Frequency :
- 135MHz
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 250mV
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Datasheets
- ZXTN10150DZTA

NPN -55°C~150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
ZXTN10150DZTA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 250mV.Emitter base voltages of 7V can achieve high levels of efficiency.In the part, the transition frequency is 135MHz.A maximum collector current of 1A volts can be achieved.
ZXTN10150DZTA Features
the DC current gain for this device is 100 @ 150mA 250mV
the emitter base voltage is kept at 7V
a transition frequency of 135MHz
ZXTN10150DZTA Applications
There are a lot of Diodes Incorporated
ZXTN10150DZTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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