ZXTN10150DZTA
- Mfr.Part #
- ZXTN10150DZTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 150V 1A SOT89-3
- Stock
- 11,312
- In Stock :
- 11,312
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- Transistor Application :
- AMPLIFIER
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Factory Lead Time :
- 15 Weeks
- ECCN Code :
- EAR99
- Configuration :
- Single
- Max Collector Current :
- 1A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Finish :
- Matte Tin (Sn)
- Emitter Base Voltage (VEBO) :
- 7V
- Additional Feature :
- High Reliability
- Transition Frequency :
- 135MHz
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tape and Reel (TR)
- Max Power Dissipation :
- 1.5W
- Collector Emitter Breakdown Voltage :
- 150V
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 250mV
- Collector Base Voltage (VCBO) :
- 150V
- Package / Case :
- TO-243AA
- Terminal Form :
- Flat
- Frequency :
- 135MHz
- Terminal Position :
- Single
- Pin Count :
- 3
- Published :
- 2016
- Polarity/Channel Type :
- NPN
- Pbfree Code :
- yes
- Case Connection :
- COLLECTOR
- Qualification Status :
- Not Qualified
- JESD-30 Code :
- R-PSSO-F3
- Power Dissipation :
- 1.5W
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Element Material :
- SILICON
- Number of Pins :
- 4
- Collector Emitter Voltage (VCEO) :
- 150V
- Current - Collector (Ic) (Max) :
- 1A
- Datasheets
- ZXTN10150DZTA

NPN -55°C~150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
ZXTN10150DZTA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 250mV.Emitter base voltages of 7V can achieve high levels of efficiency.In the part, the transition frequency is 135MHz.A maximum collector current of 1A volts can be achieved.
ZXTN10150DZTA Features
the DC current gain for this device is 100 @ 150mA 250mV
the emitter base voltage is kept at 7V
a transition frequency of 135MHz
ZXTN10150DZTA Applications
There are a lot of Diodes Incorporated
ZXTN10150DZTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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