ZXTN10150DZTA
- Mfr.Part #
- ZXTN10150DZTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 150V 1A SOT89-3
- Stock
- 11,312
- In Stock :
- 11,312
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 150V
- Case Connection :
- COLLECTOR
- Additional Feature :
- High Reliability
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 150V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 250mV
- Max Power Dissipation :
- 1.5W
- Qualification Status :
- Not Qualified
- Pin Count :
- 3
- Terminal Position :
- Single
- Power Dissipation :
- 1.5W
- Collector Emitter Voltage (VCEO) :
- 150V
- Max Collector Current :
- 1A
- Transistor Application :
- AMPLIFIER
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency :
- 135MHz
- Configuration :
- Single
- Pbfree Code :
- yes
- Factory Lead Time :
- 15 Weeks
- Package / Case :
- TO-243AA
- JESD-30 Code :
- R-PSSO-F3
- Mounting Type :
- Surface Mount
- Published :
- 2016
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- Emitter Base Voltage (VEBO) :
- 7V
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Form :
- Flat
- Transistor Type :
- NPN
- ECCN Code :
- EAR99
- Current - Collector (Ic) (Max) :
- 1A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 135MHz
- Number of Pins :
- 4
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Finish :
- Matte Tin (Sn)
- Datasheets
- ZXTN10150DZTA

NPN -55°C~150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
ZXTN10150DZTA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 250mV.Emitter base voltages of 7V can achieve high levels of efficiency.In the part, the transition frequency is 135MHz.A maximum collector current of 1A volts can be achieved.
ZXTN10150DZTA Features
the DC current gain for this device is 100 @ 150mA 250mV
the emitter base voltage is kept at 7V
a transition frequency of 135MHz
ZXTN10150DZTA Applications
There are a lot of Diodes Incorporated
ZXTN10150DZTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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