ZXTN19060CFFTA
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- Mfr.Part #
- ZXTN19060CFFTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-23-3 Flat Leads
- Datasheet
- Download
- Description
- TRANS NPN 60V 5.5A SOT23F
- Stock
- 15,112
- In Stock ：
- 15,112
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- Height :
- 1mm
- Terminal Position :
- Dual
- Radiation Hardening :
- No
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Width :
- 1.7mm
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 160V
- Vce Saturation (Max) @ Ib, Ic :
- 175mV @ 550mA, 5.5A
- Pbfree Code :
- yes
- Polarity/Channel Type :
- NPN
- Peak Reflow Temperature (Cel) :
- 260
- Max Breakdown Voltage :
- 60V
- Collector Emitter Breakdown Voltage :
- 60V
- Power - Max :
- 1.5W
- Mounting Type :
- Surface Mount
- Base Part Number :
- ZXTN19060C
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- Transition Frequency :
- 130MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Package / Case :
- SOT-23-3 Flat Leads
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Power Dissipation :
- 2W
- Length :
- 3mm
- Factory Lead Time :
- 15 Weeks
- Mount :
- Surface Mount
- Max Collector Current :
- 5.5A
- Terminal Finish :
- Matte Tin (Sn)
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 60V
- Number of Terminations :
- 3
- Gain Bandwidth Product :
- 130MHz
- Turn On Time-Max (ton) :
- 40.5ns
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Frequency :
- 130MHz
- Pin Count :
- 3
- Collector Emitter Saturation Voltage :
- 175mV
- Published :
- 2006
- Emitter Base Voltage (VEBO) :
- 7V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 2V
- Max Power Dissipation :
- 2W
- ECCN Code :
- EAR99
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- ZXTN19060CFFTA
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN SOT-23-3 Flat Leads Tape & Reel (TR) Surface Mount
ZXTN19060CFFTA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 100mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 175mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 175mV @ 550mA, 5.5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Parts of this part have transition frequencies of 130MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 5.5A volts.
ZXTN19060CFFTA Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of 175mV
the vce saturation(Max) is 175mV @ 550mA, 5.5A
the emitter base voltage is kept at 7V
a transition frequency of 130MHz
ZXTN19060CFFTA Applications
There are a lot of Diodes Incorporated
ZXTN19060CFFTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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