ZXTN19020DZTA
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- Mfr.Part #
- ZXTN19020DZTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 20V 7.5A SOT89-3
- Stock
- 52,001
- In Stock ：
- 52,001
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN
- Max Breakdown Voltage :
- 20V
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 375mA, 7.5A
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Base Part Number :
- ZXTN19020D
- Max Collector Current :
- 7.5A
- Collector Base Voltage (VCBO) :
- 70V
- Pbfree Code :
- yes
- Published :
- 2008
- Collector Emitter Breakdown Voltage :
- 20V
- Max Frequency :
- 160MHz
- Factory Lead Time :
- 15 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 100mA 2V
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Length :
- 4.6mm
- Mount :
- Surface Mount
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Form :
- Flat
- Package / Case :
- TO-243AA
- REACH SVHC :
- No SVHC
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Transition Frequency :
- 160MHz
- Power - Max :
- 2.4W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 160MHz
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- 200mV
- Case Connection :
- COLLECTOR
- Emitter Base Voltage (VEBO) :
- 7V
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Operating Temperature :
- -55°C~150°C TJ
- Max Power Dissipation :
- 4.46W
- Width :
- 2.6mm
- JESD-30 Code :
- R-PSSO-F3
- Collector Emitter Voltage (VCEO) :
- 20V
- Polarity/Channel Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Weight :
- 51.993025mg
- Number of Pins :
- 4
- Height :
- 1.6mm
- Terminal Finish :
- Matte Tin (Sn)
- Datasheets
- ZXTN19020DZTA
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
ZXTN19020DZTA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 300 @ 100mA 2V.The collector emitter saturation voltage is 200mV, which allows for maximum design flexibility.When VCE saturation is 200mV @ 375mA, 7.5A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 7V can achieve high levels of efficiency.In the part, the transition frequency is 160MHz.This device can take an input voltage of 20V volts before it breaks down.A maximum collector current of 7.5A volts can be achieved.
ZXTN19020DZTA Features
the DC current gain for this device is 300 @ 100mA 2V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 375mA, 7.5A
the emitter base voltage is kept at 7V
a transition frequency of 160MHz
ZXTN19020DZTA Applications
There are a lot of Diodes Incorporated
ZXTN19020DZTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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