ZXTN19020DZTA
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- Mfr.Part #
- ZXTN19020DZTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 20V 7.5A SOT89-3
- Stock
- 52,001
- In Stock ：
- 52,001
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 70V
- Emitter Base Voltage (VEBO) :
- 7V
- Pin Count :
- 3
- Mount :
- Surface Mount
- JESD-30 Code :
- R-PSSO-F3
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 4
- Factory Lead Time :
- 15 Weeks
- Transition Frequency :
- 160MHz
- Power - Max :
- 2.4W
- REACH SVHC :
- No SVHC
- Element Configuration :
- Single
- Length :
- 4.6mm
- Gain Bandwidth Product :
- 160MHz
- RoHS Status :
- ROHS3 Compliant
- Height :
- 1.6mm
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Pbfree Code :
- yes
- Max Frequency :
- 160MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Weight :
- 51.993025mg
- Collector Emitter Voltage (VCEO) :
- 20V
- Package / Case :
- TO-243AA
- Published :
- 2008
- Case Connection :
- COLLECTOR
- Terminal Finish :
- Matte Tin (Sn)
- Collector Emitter Breakdown Voltage :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 4.46W
- Base Part Number :
- ZXTN19020D
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- 200mV
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Transistor Type :
- NPN
- Width :
- 2.6mm
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 100mA 2V
- Peak Reflow Temperature (Cel) :
- 260
- Max Breakdown Voltage :
- 20V
- Polarity/Channel Type :
- NPN
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 375mA, 7.5A
- Terminal Form :
- Flat
- Max Collector Current :
- 7.5A
- Number of Terminations :
- 3
- Datasheets
- ZXTN19020DZTA
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
ZXTN19020DZTA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 300 @ 100mA 2V.The collector emitter saturation voltage is 200mV, which allows for maximum design flexibility.When VCE saturation is 200mV @ 375mA, 7.5A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 7V can achieve high levels of efficiency.In the part, the transition frequency is 160MHz.This device can take an input voltage of 20V volts before it breaks down.A maximum collector current of 7.5A volts can be achieved.
ZXTN19020DZTA Features
the DC current gain for this device is 300 @ 100mA 2V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 375mA, 7.5A
the emitter base voltage is kept at 7V
a transition frequency of 160MHz
ZXTN19020DZTA Applications
There are a lot of Diodes Incorporated
ZXTN19020DZTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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