ZXTN19020DZTA
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- Mfr.Part #
- ZXTN19020DZTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 20V 7.5A SOT89-3
- Stock
- 52,001
- In Stock ：
- 52,001
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Form :
- Flat
- Case Connection :
- COLLECTOR
- Width :
- 2.6mm
- Height :
- 1.6mm
- Terminal Finish :
- Matte Tin (Sn)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 100mA 2V
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Peak Reflow Temperature (Cel) :
- 260
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-243AA
- Gain Bandwidth Product :
- 160MHz
- Collector Emitter Saturation Voltage :
- 200mV
- Factory Lead Time :
- 15 Weeks
- Mount :
- Surface Mount
- Max Power Dissipation :
- 4.46W
- Collector Emitter Voltage (VCEO) :
- 20V
- Transistor Type :
- NPN
- Pin Count :
- 3
- Number of Elements :
- 1
- Power - Max :
- 2.4W
- Transition Frequency :
- 160MHz
- Operating Temperature :
- -55°C~150°C TJ
- Max Frequency :
- 160MHz
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 375mA, 7.5A
- REACH SVHC :
- No SVHC
- Emitter Base Voltage (VEBO) :
- 7V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Published :
- 2008
- Weight :
- 51.993025mg
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- JESD-30 Code :
- R-PSSO-F3
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Collector Base Voltage (VCBO) :
- 70V
- Base Part Number :
- ZXTN19020D
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 20V
- Pbfree Code :
- yes
- Number of Pins :
- 4
- Max Breakdown Voltage :
- 20V
- Max Collector Current :
- 7.5A
- Length :
- 4.6mm
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Datasheets
- ZXTN19020DZTA
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
ZXTN19020DZTA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 300 @ 100mA 2V.The collector emitter saturation voltage is 200mV, which allows for maximum design flexibility.When VCE saturation is 200mV @ 375mA, 7.5A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 7V can achieve high levels of efficiency.In the part, the transition frequency is 160MHz.This device can take an input voltage of 20V volts before it breaks down.A maximum collector current of 7.5A volts can be achieved.
ZXTN19020DZTA Features
the DC current gain for this device is 300 @ 100mA 2V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 375mA, 7.5A
the emitter base voltage is kept at 7V
a transition frequency of 160MHz
ZXTN19020DZTA Applications
There are a lot of Diodes Incorporated
ZXTN19020DZTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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