ZXTN19020DZTA
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- Mfr.Part #
- ZXTN19020DZTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 20V 7.5A SOT89-3
- Stock
- 52,001
- In Stock ：
- 52,001
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 4.46W
- Mount :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 70V
- Package / Case :
- TO-243AA
- Base Part Number :
- ZXTN19020D
- Width :
- 2.6mm
- Case Connection :
- COLLECTOR
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Transistor Type :
- NPN
- Operating Temperature :
- -55°C~150°C TJ
- JESD-30 Code :
- R-PSSO-F3
- Factory Lead Time :
- 15 Weeks
- Polarity/Channel Type :
- NPN
- Weight :
- 51.993025mg
- Height :
- 1.6mm
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- Gain Bandwidth Product :
- 160MHz
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 375mA, 7.5A
- Peak Reflow Temperature (Cel) :
- 260
- Max Collector Current :
- 7.5A
- Emitter Base Voltage (VEBO) :
- 7V
- Length :
- 4.6mm
- Terminal Finish :
- Matte Tin (Sn)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- RoHS Status :
- ROHS3 Compliant
- Max Frequency :
- 160MHz
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Power - Max :
- 2.4W
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 20V
- Lead Free :
- Lead Free
- REACH SVHC :
- No SVHC
- Max Breakdown Voltage :
- 20V
- Pin Count :
- 3
- Mounting Type :
- Surface Mount
- Terminal Form :
- Flat
- Pbfree Code :
- yes
- Number of Pins :
- 4
- Published :
- 2008
- Collector Emitter Saturation Voltage :
- 200mV
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 20V
- Transition Frequency :
- 160MHz
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 100mA 2V
- JESD-609 Code :
- e3
- Datasheets
- ZXTN19020DZTA
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
ZXTN19020DZTA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 300 @ 100mA 2V.The collector emitter saturation voltage is 200mV, which allows for maximum design flexibility.When VCE saturation is 200mV @ 375mA, 7.5A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 7V can achieve high levels of efficiency.In the part, the transition frequency is 160MHz.This device can take an input voltage of 20V volts before it breaks down.A maximum collector current of 7.5A volts can be achieved.
ZXTN19020DZTA Features
the DC current gain for this device is 300 @ 100mA 2V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 375mA, 7.5A
the emitter base voltage is kept at 7V
a transition frequency of 160MHz
ZXTN19020DZTA Applications
There are a lot of Diodes Incorporated
ZXTN19020DZTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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