ZXTN19020DZTA
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- Mfr.Part #
- ZXTN19020DZTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 20V 7.5A SOT89-3
- Stock
- 52,001
- In Stock ：
- 52,001
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- REACH SVHC :
- No SVHC
- Base Part Number :
- ZXTN19020D
- Radiation Hardening :
- No
- Terminal Form :
- Flat
- Max Collector Current :
- 7.5A
- Collector Emitter Saturation Voltage :
- 200mV
- Max Power Dissipation :
- 4.46W
- Length :
- 4.6mm
- Weight :
- 51.993025mg
- Emitter Base Voltage (VEBO) :
- 7V
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Pin Count :
- 3
- Power - Max :
- 2.4W
- Transition Frequency :
- 160MHz
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- 40
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 100mA 2V
- Factory Lead Time :
- 15 Weeks
- RoHS Status :
- ROHS3 Compliant
- Gain Bandwidth Product :
- 160MHz
- Collector Emitter Breakdown Voltage :
- 20V
- Collector Base Voltage (VCBO) :
- 70V
- ECCN Code :
- EAR99
- Height :
- 1.6mm
- Case Connection :
- COLLECTOR
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 375mA, 7.5A
- Max Frequency :
- 160MHz
- Polarity/Channel Type :
- NPN
- Number of Elements :
- 1
- Package / Case :
- TO-243AA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- Element Configuration :
- Single
- Published :
- 2008
- JESD-30 Code :
- R-PSSO-F3
- Number of Terminations :
- 3
- Mounting Type :
- Surface Mount
- Transistor Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Voltage (VCEO) :
- 20V
- Width :
- 2.6mm
- Max Breakdown Voltage :
- 20V
- Number of Pins :
- 4
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Finish :
- Matte Tin (Sn)
- Datasheets
- ZXTN19020DZTA
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
ZXTN19020DZTA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 300 @ 100mA 2V.The collector emitter saturation voltage is 200mV, which allows for maximum design flexibility.When VCE saturation is 200mV @ 375mA, 7.5A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 7V can achieve high levels of efficiency.In the part, the transition frequency is 160MHz.This device can take an input voltage of 20V volts before it breaks down.A maximum collector current of 7.5A volts can be achieved.
ZXTN19020DZTA Features
the DC current gain for this device is 300 @ 100mA 2V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 375mA, 7.5A
the emitter base voltage is kept at 7V
a transition frequency of 160MHz
ZXTN19020DZTA Applications
There are a lot of Diodes Incorporated
ZXTN19020DZTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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