ZXTN19020DGTA
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- Mfr.Part #
- ZXTN19020DGTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 20V 9A SOT223-3
- Stock
- 28,999
- In Stock ：
- 28,999
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 15 Weeks
- Case Connection :
- COLLECTOR
- Transistor Element Material :
- SILICON
- Length :
- 6.7mm
- Number of Terminations :
- 4
- Polarity/Channel Type :
- NPN
- Lead Free :
- Lead Free
- Base Part Number :
- ZXTN19020D
- Width :
- 3.7mm
- Radiation Hardening :
- No
- Terminal Finish :
- Matte Tin (Sn)
- Collector Emitter Breakdown Voltage :
- 20V
- Number of Pins :
- 4
- Pin Count :
- 4
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transition Frequency :
- 160MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 7.994566mg
- Package / Case :
- TO-261-4, TO-261AA
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 9A
- JESD-609 Code :
- e3
- Collector Emitter Voltage (VCEO) :
- 20V
- Published :
- 2008
- Height :
- 1.65mm
- Transistor Type :
- NPN
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 100mA 2V
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Saturation Voltage :
- 250mV
- Max Breakdown Voltage :
- 20V
- Collector Base Voltage (VCBO) :
- 70V
- Terminal Form :
- Gull wing
- Emitter Base Voltage (VEBO) :
- 7V
- Max Frequency :
- 160MHz
- Peak Reflow Temperature (Cel) :
- 260
- Gain Bandwidth Product :
- 160MHz
- REACH SVHC :
- No SVHC
- Power - Max :
- 3W
- Pbfree Code :
- No
- Terminal Position :
- Dual
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 450mA, 9A
- Max Power Dissipation :
- 5.3W
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- ZXTN19020DGTA
ZXTN19020DGTA Documents
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
ZXTN19020DGTA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 300 @ 100mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 250mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 450mA, 9A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Parts of this part have transition frequencies of 160MHz.Single BJT transistor can take a breakdown input voltage of 20V volts.During maximum operation, collector current can be as low as 9A volts.
ZXTN19020DGTA Features
the DC current gain for this device is 300 @ 100mA 2V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 450mA, 9A
the emitter base voltage is kept at 7V
a transition frequency of 160MHz
ZXTN19020DGTA Applications
There are a lot of Diodes Incorporated
ZXTN19020DGTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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