ZXTN19020DGTA
- Mfr.Part #
- ZXTN19020DGTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 20V 9A SOT223-3
- Stock
- 28,999
- In Stock :
- 28,999
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Terminal Finish :
- Matte Tin (Sn)
- Power - Max :
- 3W
- Pbfree Code :
- No
- Polarity/Channel Type :
- NPN
- Width :
- 3.7mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 100mA 2V
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Published :
- 2008
- Transistor Type :
- NPN
- Lead Free :
- Lead Free
- Max Breakdown Voltage :
- 20V
- Transition Frequency :
- 160MHz
- Height :
- 1.65mm
- REACH SVHC :
- No SVHC
- Max Frequency :
- 160MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 20V
- Operating Temperature :
- -55°C~150°C TJ
- Peak Reflow Temperature (Cel) :
- 260
- Collector Base Voltage (VCBO) :
- 70V
- Base Part Number :
- ZXTN19020D
- ECCN Code :
- EAR99
- Factory Lead Time :
- 15 Weeks
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- 250mV
- Number of Pins :
- 4
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 450mA, 9A
- Gain Bandwidth Product :
- 160MHz
- Terminal Position :
- Dual
- Case Connection :
- COLLECTOR
- Number of Terminations :
- 4
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- Weight :
- 7.994566mg
- Mount :
- Surface Mount
- Pin Count :
- 4
- Max Collector Current :
- 9A
- JESD-609 Code :
- e3
- Length :
- 6.7mm
- Package / Case :
- TO-261-4, TO-261AA
- Max Power Dissipation :
- 5.3W
- Emitter Base Voltage (VEBO) :
- 7V
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Breakdown Voltage :
- 20V
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Datasheets
- ZXTN19020DGTA

NPN -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
ZXTN19020DGTA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 300 @ 100mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 250mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 450mA, 9A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Parts of this part have transition frequencies of 160MHz.Single BJT transistor can take a breakdown input voltage of 20V volts.During maximum operation, collector current can be as low as 9A volts.
ZXTN19020DGTA Features
the DC current gain for this device is 300 @ 100mA 2V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 450mA, 9A
the emitter base voltage is kept at 7V
a transition frequency of 160MHz
ZXTN19020DGTA Applications
There are a lot of Diodes Incorporated
ZXTN19020DGTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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