ZXTN19020DGTA
- Mfr.Part #
- ZXTN19020DGTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 20V 9A SOT223-3
- Stock
- 28,999
- In Stock :
- 28,999
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Case Connection :
- COLLECTOR
- Number of Terminations :
- 4
- Emitter Base Voltage (VEBO) :
- 7V
- Base Part Number :
- ZXTN19020D
- Power - Max :
- 3W
- Terminal Position :
- Dual
- Mounting Type :
- Surface Mount
- Max Breakdown Voltage :
- 20V
- Operating Temperature :
- -55°C~150°C TJ
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Single
- Max Power Dissipation :
- 5.3W
- Max Frequency :
- 160MHz
- Collector Emitter Breakdown Voltage :
- 20V
- Terminal Finish :
- Matte Tin (Sn)
- Transistor Element Material :
- SILICON
- Published :
- 2008
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Length :
- 6.7mm
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 70V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 100mA 2V
- Number of Pins :
- 4
- Factory Lead Time :
- 15 Weeks
- Collector Emitter Saturation Voltage :
- 250mV
- Polarity/Channel Type :
- NPN
- Transistor Type :
- NPN
- Terminal Form :
- Gull wing
- Width :
- 3.7mm
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- No
- Peak Reflow Temperature (Cel) :
- 260
- Gain Bandwidth Product :
- 160MHz
- Weight :
- 7.994566mg
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 450mA, 9A
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Pin Count :
- 4
- Transition Frequency :
- 160MHz
- Mount :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 20V
- Height :
- 1.65mm
- Package / Case :
- TO-261-4, TO-261AA
- Max Collector Current :
- 9A
- Lead Free :
- Lead Free
- Datasheets
- ZXTN19020DGTA

NPN -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
ZXTN19020DGTA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 300 @ 100mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 250mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 450mA, 9A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Parts of this part have transition frequencies of 160MHz.Single BJT transistor can take a breakdown input voltage of 20V volts.During maximum operation, collector current can be as low as 9A volts.
ZXTN19020DGTA Features
the DC current gain for this device is 300 @ 100mA 2V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 450mA, 9A
the emitter base voltage is kept at 7V
a transition frequency of 160MHz
ZXTN19020DGTA Applications
There are a lot of Diodes Incorporated
ZXTN19020DGTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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