ZXTN19020DGTA
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- Mfr.Part #
- ZXTN19020DGTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 20V 9A SOT223-3
- Stock
- 28,999
- In Stock ：
- 28,999
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- No
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 20V
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Transition Frequency :
- 160MHz
- Packaging :
- Tape and Reel (TR)
- Emitter Base Voltage (VEBO) :
- 7V
- Polarity/Channel Type :
- NPN
- Number of Elements :
- 1
- Published :
- 2008
- Power - Max :
- 3W
- Base Part Number :
- ZXTN19020D
- Collector Emitter Saturation Voltage :
- 250mV
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 20V
- Max Frequency :
- 160MHz
- Number of Terminations :
- 4
- Peak Reflow Temperature (Cel) :
- 260
- Mount :
- Surface Mount
- Case Connection :
- COLLECTOR
- Height :
- 1.65mm
- Width :
- 3.7mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Matte Tin (Sn)
- Terminal Form :
- Gull wing
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 4
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 100mA 2V
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 5.3W
- Length :
- 6.7mm
- Transistor Type :
- NPN
- Collector Base Voltage (VCBO) :
- 70V
- Weight :
- 7.994566mg
- Pin Count :
- 4
- Max Collector Current :
- 9A
- Terminal Position :
- Dual
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 450mA, 9A
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 20V
- Package / Case :
- TO-261-4, TO-261AA
- Factory Lead Time :
- 15 Weeks
- Gain Bandwidth Product :
- 160MHz
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- REACH SVHC :
- No SVHC
- Datasheets
- ZXTN19020DGTA
ZXTN19020DGTA Documents
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
ZXTN19020DGTA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 300 @ 100mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 250mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 450mA, 9A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Parts of this part have transition frequencies of 160MHz.Single BJT transistor can take a breakdown input voltage of 20V volts.During maximum operation, collector current can be as low as 9A volts.
ZXTN19020DGTA Features
the DC current gain for this device is 300 @ 100mA 2V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 450mA, 9A
the emitter base voltage is kept at 7V
a transition frequency of 160MHz
ZXTN19020DGTA Applications
There are a lot of Diodes Incorporated
ZXTN19020DGTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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