ZXTN19020DGTA
- Mfr.Part #
- ZXTN19020DGTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 20V 9A SOT223-3
- Stock
- 28,999
- In Stock :
- 28,999
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-261-4, TO-261AA
- Collector Base Voltage (VCBO) :
- 70V
- Terminal Finish :
- Matte Tin (Sn)
- Pbfree Code :
- No
- Factory Lead Time :
- 15 Weeks
- JESD-609 Code :
- e3
- Transition Frequency :
- 160MHz
- Terminal Form :
- Gull wing
- Terminal Position :
- Dual
- Width :
- 3.7mm
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Max Breakdown Voltage :
- 20V
- Element Configuration :
- Single
- Number of Pins :
- 4
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 450mA, 9A
- Collector Emitter Saturation Voltage :
- 250mV
- ECCN Code :
- EAR99
- Case Connection :
- COLLECTOR
- Base Part Number :
- ZXTN19020D
- Power - Max :
- 3W
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Polarity/Channel Type :
- NPN
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 7V
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tape and Reel (TR)
- Max Frequency :
- 160MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 100mA 2V
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 20V
- Max Collector Current :
- 9A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Terminations :
- 4
- Published :
- 2008
- Height :
- 1.65mm
- Weight :
- 7.994566mg
- Max Power Dissipation :
- 5.3W
- Gain Bandwidth Product :
- 160MHz
- REACH SVHC :
- No SVHC
- Length :
- 6.7mm
- Pin Count :
- 4
- Datasheets
- ZXTN19020DGTA
ZXTN19020DGTA Documents

NPN -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
ZXTN19020DGTA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 300 @ 100mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 250mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 450mA, 9A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Parts of this part have transition frequencies of 160MHz.Single BJT transistor can take a breakdown input voltage of 20V volts.During maximum operation, collector current can be as low as 9A volts.
ZXTN19020DGTA Features
the DC current gain for this device is 300 @ 100mA 2V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 450mA, 9A
the emitter base voltage is kept at 7V
a transition frequency of 160MHz
ZXTN19020DGTA Applications
There are a lot of Diodes Incorporated
ZXTN19020DGTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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