ZXTN19020DGTA
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- Mfr.Part #
- ZXTN19020DGTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 20V 9A SOT223-3
- Stock
- 28,999
- In Stock ：
- 28,999
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 450mA, 9A
- Max Collector Current :
- 9A
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- 7V
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Radiation Hardening :
- No
- Max Breakdown Voltage :
- 20V
- Collector Emitter Saturation Voltage :
- 250mV
- Max Frequency :
- 160MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Published :
- 2008
- Max Power Dissipation :
- 5.3W
- Case Connection :
- COLLECTOR
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 20V
- Operating Temperature :
- -55°C~150°C TJ
- Weight :
- 7.994566mg
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 15 Weeks
- Width :
- 3.7mm
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Pin Count :
- 4
- Number of Terminations :
- 4
- Polarity/Channel Type :
- NPN
- Base Part Number :
- ZXTN19020D
- Collector Base Voltage (VCBO) :
- 70V
- Height :
- 1.65mm
- Transition Frequency :
- 160MHz
- Collector Emitter Voltage (VCEO) :
- 20V
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Lead Free :
- Lead Free
- Package / Case :
- TO-261-4, TO-261AA
- Terminal Position :
- Dual
- Terminal Finish :
- Matte Tin (Sn)
- Length :
- 6.7mm
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- Power - Max :
- 3W
- Gain Bandwidth Product :
- 160MHz
- Number of Pins :
- 4
- Packaging :
- Tape and Reel (TR)
- Peak Reflow Temperature (Cel) :
- 260
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 100mA 2V
- Pbfree Code :
- No
- Datasheets
- ZXTN19020DGTA
ZXTN19020DGTA Documents
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
ZXTN19020DGTA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 300 @ 100mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 250mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 450mA, 9A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Parts of this part have transition frequencies of 160MHz.Single BJT transistor can take a breakdown input voltage of 20V volts.During maximum operation, collector current can be as low as 9A volts.
ZXTN19020DGTA Features
the DC current gain for this device is 300 @ 100mA 2V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 450mA, 9A
the emitter base voltage is kept at 7V
a transition frequency of 160MHz
ZXTN19020DGTA Applications
There are a lot of Diodes Incorporated
ZXTN19020DGTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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