ZXTN19020DGTA
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- Mfr.Part #
- ZXTN19020DGTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 20V 9A SOT223-3
- Stock
- 28,999
- In Stock ：
- 28,999
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Peak Reflow Temperature (Cel) :
- 260
- Case Connection :
- COLLECTOR
- Mount :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Max Breakdown Voltage :
- 20V
- Height :
- 1.65mm
- Emitter Base Voltage (VEBO) :
- 7V
- Factory Lead Time :
- 15 Weeks
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Transition Frequency :
- 160MHz
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 4
- Base Part Number :
- ZXTN19020D
- Length :
- 6.7mm
- Width :
- 3.7mm
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 160MHz
- JESD-609 Code :
- e3
- Pin Count :
- 4
- Power - Max :
- 3W
- Terminal Form :
- Gull wing
- Lead Free :
- Lead Free
- Published :
- 2008
- Collector Emitter Saturation Voltage :
- 250mV
- Package / Case :
- TO-261-4, TO-261AA
- ECCN Code :
- EAR99
- REACH SVHC :
- No SVHC
- Packaging :
- Tape and Reel (TR)
- Weight :
- 7.994566mg
- Pbfree Code :
- No
- Collector Base Voltage (VCBO) :
- 70V
- Radiation Hardening :
- No
- Transistor Type :
- NPN
- Terminal Position :
- Dual
- Collector Emitter Voltage (VCEO) :
- 20V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 20V
- Terminal Finish :
- Matte Tin (Sn)
- Number of Terminations :
- 4
- Max Collector Current :
- 9A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 100mA 2V
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 450mA, 9A
- Mounting Type :
- Surface Mount
- Max Frequency :
- 160MHz
- Max Power Dissipation :
- 5.3W
- Datasheets
- ZXTN19020DGTA
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
ZXTN19020DGTA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 300 @ 100mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 250mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 450mA, 9A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Parts of this part have transition frequencies of 160MHz.Single BJT transistor can take a breakdown input voltage of 20V volts.During maximum operation, collector current can be as low as 9A volts.
ZXTN19020DGTA Features
the DC current gain for this device is 300 @ 100mA 2V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 450mA, 9A
the emitter base voltage is kept at 7V
a transition frequency of 160MHz
ZXTN19020DGTA Applications
There are a lot of Diodes Incorporated
ZXTN19020DGTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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