ZXTN19020DGTA
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- Mfr.Part #
- ZXTN19020DGTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 20V 9A SOT223-3
- Stock
- 28,999
- In Stock ：
- 28,999
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 4
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Base Part Number :
- ZXTN19020D
- Factory Lead Time :
- 15 Weeks
- Max Frequency :
- 160MHz
- Terminal Finish :
- Matte Tin (Sn)
- Max Breakdown Voltage :
- 20V
- Lead Free :
- Lead Free
- Package / Case :
- TO-261-4, TO-261AA
- Collector Emitter Saturation Voltage :
- 250mV
- Max Power Dissipation :
- 5.3W
- Transition Frequency :
- 160MHz
- Number of Pins :
- 4
- Packaging :
- Tape and Reel (TR)
- Emitter Base Voltage (VEBO) :
- 7V
- Case Connection :
- COLLECTOR
- REACH SVHC :
- No SVHC
- Radiation Hardening :
- No
- Terminal Position :
- Dual
- Collector Emitter Voltage (VCEO) :
- 20V
- Max Collector Current :
- 9A
- Terminal Form :
- Gull wing
- Polarity/Channel Type :
- NPN
- Collector Base Voltage (VCBO) :
- 70V
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 450mA, 9A
- Width :
- 3.7mm
- Length :
- 6.7mm
- Element Configuration :
- Single
- Published :
- 2008
- Collector Emitter Breakdown Voltage :
- 20V
- Mount :
- Surface Mount
- Number of Terminations :
- 4
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Type :
- NPN
- Peak Reflow Temperature (Cel) :
- 260
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 100mA 2V
- Power - Max :
- 3W
- Gain Bandwidth Product :
- 160MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pbfree Code :
- No
- RoHS Status :
- ROHS3 Compliant
- Weight :
- 7.994566mg
- Height :
- 1.65mm
- ECCN Code :
- EAR99
- Datasheets
- ZXTN19020DGTA
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
ZXTN19020DGTA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 300 @ 100mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 250mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 450mA, 9A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Parts of this part have transition frequencies of 160MHz.Single BJT transistor can take a breakdown input voltage of 20V volts.During maximum operation, collector current can be as low as 9A volts.
ZXTN19020DGTA Features
the DC current gain for this device is 300 @ 100mA 2V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 450mA, 9A
the emitter base voltage is kept at 7V
a transition frequency of 160MHz
ZXTN19020DGTA Applications
There are a lot of Diodes Incorporated
ZXTN19020DGTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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