ZXTN19020DGTA
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- Mfr.Part #
- ZXTN19020DGTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 20V 9A SOT223-3
- Stock
- 28,999
- In Stock ：
- 28,999
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-261-4, TO-261AA
- Polarity/Channel Type :
- NPN
- Power - Max :
- 3W
- Height :
- 1.65mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 100mA 2V
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 20V
- Case Connection :
- COLLECTOR
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- Pbfree Code :
- No
- Terminal Position :
- Dual
- Max Breakdown Voltage :
- 20V
- Number of Pins :
- 4
- Gain Bandwidth Product :
- 160MHz
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Base Part Number :
- ZXTN19020D
- Max Power Dissipation :
- 5.3W
- Packaging :
- Tape and Reel (TR)
- Pin Count :
- 4
- Mount :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Collector Emitter Saturation Voltage :
- 250mV
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Form :
- Gull wing
- Max Collector Current :
- 9A
- Factory Lead Time :
- 15 Weeks
- Published :
- 2008
- Transistor Type :
- NPN
- Max Frequency :
- 160MHz
- Collector Base Voltage (VCBO) :
- 70V
- Emitter Base Voltage (VEBO) :
- 7V
- Width :
- 3.7mm
- Collector Emitter Breakdown Voltage :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 160MHz
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 450mA, 9A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Terminations :
- 4
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Terminal Finish :
- Matte Tin (Sn)
- Weight :
- 7.994566mg
- Length :
- 6.7mm
- Datasheets
- ZXTN19020DGTA
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
ZXTN19020DGTA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 300 @ 100mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 250mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 450mA, 9A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Parts of this part have transition frequencies of 160MHz.Single BJT transistor can take a breakdown input voltage of 20V volts.During maximum operation, collector current can be as low as 9A volts.
ZXTN19020DGTA Features
the DC current gain for this device is 300 @ 100mA 2V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 450mA, 9A
the emitter base voltage is kept at 7V
a transition frequency of 160MHz
ZXTN19020DGTA Applications
There are a lot of Diodes Incorporated
ZXTN19020DGTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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