ZXTN19020DGTA
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- Mfr.Part #
- ZXTN19020DGTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 20V 9A SOT223-3
- Stock
- 28,999
- In Stock ：
- 28,999
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 4
- Terminal Form :
- Gull wing
- Height :
- 1.65mm
- Lead Free :
- Lead Free
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Published :
- 2008
- Emitter Base Voltage (VEBO) :
- 7V
- Number of Elements :
- 1
- Base Part Number :
- ZXTN19020D
- ECCN Code :
- EAR99
- Pbfree Code :
- No
- JESD-609 Code :
- e3
- Gain Bandwidth Product :
- 160MHz
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tape and Reel (TR)
- Transition Frequency :
- 160MHz
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Mount :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 450mA, 9A
- Factory Lead Time :
- 15 Weeks
- Collector Emitter Saturation Voltage :
- 250mV
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 4
- Power - Max :
- 3W
- Max Power Dissipation :
- 5.3W
- Collector Emitter Breakdown Voltage :
- 20V
- Transistor Type :
- NPN
- Terminal Finish :
- Matte Tin (Sn)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 70V
- Length :
- 6.7mm
- Weight :
- 7.994566mg
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Width :
- 3.7mm
- Radiation Hardening :
- No
- Terminal Position :
- Dual
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 100mA 2V
- Package / Case :
- TO-261-4, TO-261AA
- REACH SVHC :
- No SVHC
- Max Breakdown Voltage :
- 20V
- Case Connection :
- COLLECTOR
- Number of Terminations :
- 4
- Max Frequency :
- 160MHz
- Max Collector Current :
- 9A
- Collector Emitter Voltage (VCEO) :
- 20V
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- NPN
- Datasheets
- ZXTN19020DGTA
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
ZXTN19020DGTA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 300 @ 100mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 250mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 450mA, 9A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Parts of this part have transition frequencies of 160MHz.Single BJT transistor can take a breakdown input voltage of 20V volts.During maximum operation, collector current can be as low as 9A volts.
ZXTN19020DGTA Features
the DC current gain for this device is 300 @ 100mA 2V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 450mA, 9A
the emitter base voltage is kept at 7V
a transition frequency of 160MHz
ZXTN19020DGTA Applications
There are a lot of Diodes Incorporated
ZXTN19020DGTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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