ZXTN19020DGTA
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- Mfr.Part #
- ZXTN19020DGTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 20V 9A SOT223-3
- Stock
- 28,999
- In Stock ：
- 28,999
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- Number of Pins :
- 4
- JESD-609 Code :
- e3
- Weight :
- 7.994566mg
- RoHS Status :
- ROHS3 Compliant
- Gain Bandwidth Product :
- 160MHz
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Breakdown Voltage :
- 20V
- Terminal Form :
- Gull wing
- Number of Terminations :
- 4
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- Terminal Finish :
- Matte Tin (Sn)
- Emitter Base Voltage (VEBO) :
- 7V
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Terminal Position :
- Dual
- Transistor Type :
- NPN
- Max Power Dissipation :
- 5.3W
- Collector Emitter Breakdown Voltage :
- 20V
- Base Part Number :
- ZXTN19020D
- Case Connection :
- COLLECTOR
- Pbfree Code :
- No
- REACH SVHC :
- No SVHC
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 450mA, 9A
- ECCN Code :
- EAR99
- Width :
- 3.7mm
- Lead Free :
- Lead Free
- Height :
- 1.65mm
- Collector Emitter Voltage (VCEO) :
- 20V
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- -55°C~150°C TJ
- Transition Frequency :
- 160MHz
- Max Frequency :
- 160MHz
- Collector Base Voltage (VCBO) :
- 70V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pin Count :
- 4
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 100mA 2V
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- 250mV
- Length :
- 6.7mm
- Factory Lead Time :
- 15 Weeks
- Peak Reflow Temperature (Cel) :
- 260
- Power - Max :
- 3W
- Package / Case :
- TO-261-4, TO-261AA
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 9A
- Mount :
- Surface Mount
- Published :
- 2008
- Datasheets
- ZXTN19020DGTA
ZXTN19020DGTA Documents
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
ZXTN19020DGTA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 300 @ 100mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 250mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 450mA, 9A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Parts of this part have transition frequencies of 160MHz.Single BJT transistor can take a breakdown input voltage of 20V volts.During maximum operation, collector current can be as low as 9A volts.
ZXTN19020DGTA Features
the DC current gain for this device is 300 @ 100mA 2V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 450mA, 9A
the emitter base voltage is kept at 7V
a transition frequency of 160MHz
ZXTN19020DGTA Applications
There are a lot of Diodes Incorporated
ZXTN19020DGTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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