ZXTN04120HKTC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Type :

NPN - Darlington

Collector Emitter Breakdown Voltage :

120V

Collector Base Voltage (VCBO) :

140V

Continuous Collector Current :

1.5A

Terminal Form :

Gull wing

Case Connection :

COLLECTOR

Max Collector Current :

1.5A

Emitter Base Voltage (VEBO) :

14V

Factory Lead Time :

15 Weeks

JESD-609 Code :

e3

Number of Terminations :

2

Polarity :

NPN

hFE Min :

500

Terminal Finish :

Matte Tin (Sn)

Reference Standard :

AEC-Q101

Radiation Hardening :

No

Max Breakdown Voltage :

120V

Published :

2014

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Operating Temperature :

-55°C~150°C TJ

Collector Emitter Voltage (VCEO) :

120V

Max Power Dissipation :

1.5W

Additional Feature :

High Reliability

Number of Pins :

2

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

2000 @ 1A 5V

Weight :

200.005886mg

Number of Elements :

1

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 1mA, 1A

RoHS Status :

ROHS3 Compliant

Gain Bandwidth Product :

150MHz

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Transistor Element Material :

SILICON

Element Configuration :

Single

Current - Collector Cutoff (Max) :

100nA ICBO

Transition Frequency :

150MHz

ECCN Code :

EAR99