ZXTN620MATA
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- Mfr.Part #
- ZXTN620MATA
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-UDFN
- Datasheet
- Download
- Description
- TRANS NPN 80V 3.5A DFN2020B-3
- Stock
- 23,957
- In Stock ：
- 23,957
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- 340mV
- Transistor Application :
- SWITCHING
- Max Breakdown Voltage :
- 80V
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- 100V
- Width :
- 2.075mm
- JESD-609 Code :
- e4
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 325mV @ 300mA, 3.5A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Collector Current :
- 3.5A
- Length :
- 2.08mm
- Max Power Dissipation :
- 2.45W
- Additional Feature :
- High Reliability
- Peak Reflow Temperature (Cel) :
- 260
- Pbfree Code :
- yes
- Case Connection :
- COLLECTOR
- Current - Collector Cutoff (Max) :
- 25nA
- Collector Emitter Breakdown Voltage :
- 80V
- Packaging :
- Digi-Reel®
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 7V
- Gain Bandwidth Product :
- 160MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 200mA 2V
- Max Collector Current :
- 3.8A
- Published :
- 2002
- Frequency :
- 160MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Factory Lead Time :
- 15 Weeks
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Height :
- 580μm
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- Package / Case :
- 3-UDFN
- Mount :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 80V
- Power Dissipation :
- 2.45W
- Transistor Type :
- NPN
- Polarity/Channel Type :
- NPN
- Base Part Number :
- ZXTN620MA
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- REACH SVHC :
- No SVHC
- ECCN Code :
- EAR99
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 160MHz
- Power - Max :
- 3W
- Datasheets
- ZXTN620MATA
NPN -55°C~150°C TJ 25nA 1 Elements 3 Terminations SILICON NPN 3-UDFN Digi-Reel® Surface Mount
ZXTN620MATA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 300 @ 200mA 2V DC current gain.As it features a collector emitter saturation voltage of 340mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 3.5A.Keeping the emitter base voltage at 7V can result in a high level of efficiency.There is a transition frequency of 160MHz in the part.Single BJT transistor can be broken down at a voltage of 80V volts.When collector current reaches its maximum, it can reach 3.8A volts.
ZXTN620MATA Features
the DC current gain for this device is 300 @ 200mA 2V
a collector emitter saturation voltage of 340mV
the vce saturation(Max) is 325mV @ 300mA, 3.5A
the emitter base voltage is kept at 7V
a transition frequency of 160MHz
ZXTN620MATA Applications
There are a lot of Diodes Incorporated
ZXTN620MATA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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