ZXTN620MATA
- Mfr.Part #
- ZXTN620MATA
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-UDFN
- Datasheet
- Download
- Description
- TRANS NPN 80V 3.5A DFN2020B-3
- Stock
- 23,957
- In Stock :
- 23,957
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Factory Lead Time :
- 15 Weeks
- Power - Max :
- 3W
- Gain Bandwidth Product :
- 160MHz
- Collector Base Voltage (VCBO) :
- 100V
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 2.08mm
- Packaging :
- Digi-Reel®
- Vce Saturation (Max) @ Ib, Ic :
- 325mV @ 300mA, 3.5A
- Max Collector Current :
- 3.8A
- REACH SVHC :
- No SVHC
- Case Connection :
- COLLECTOR
- Package / Case :
- 3-UDFN
- Lead Free :
- Lead Free
- Continuous Collector Current :
- 3.5A
- Transistor Application :
- SWITCHING
- Max Breakdown Voltage :
- 80V
- Width :
- 2.075mm
- Pbfree Code :
- yes
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 2.45W
- Frequency :
- 160MHz
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Saturation Voltage :
- 340mV
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 80V
- Element Configuration :
- Single
- Terminal Position :
- Dual
- Emitter Base Voltage (VEBO) :
- 7V
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Polarity/Channel Type :
- NPN
- Transition Frequency :
- 160MHz
- Collector Emitter Voltage (VCEO) :
- 80V
- Max Power Dissipation :
- 2.45W
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 25nA
- Height :
- 580μm
- Additional Feature :
- High Reliability
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 200mA 2V
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 3
- Published :
- 2002
- JESD-609 Code :
- e4
- Pin Count :
- 3
- Base Part Number :
- ZXTN620MA
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Type :
- NPN
- Datasheets
- ZXTN620MATA

NPN -55°C~150°C TJ 25nA 1 Elements 3 Terminations SILICON NPN 3-UDFN Digi-Reel® Surface Mount
ZXTN620MATA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 300 @ 200mA 2V DC current gain.As it features a collector emitter saturation voltage of 340mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 3.5A.Keeping the emitter base voltage at 7V can result in a high level of efficiency.There is a transition frequency of 160MHz in the part.Single BJT transistor can be broken down at a voltage of 80V volts.When collector current reaches its maximum, it can reach 3.8A volts.
ZXTN620MATA Features
the DC current gain for this device is 300 @ 200mA 2V
a collector emitter saturation voltage of 340mV
the vce saturation(Max) is 325mV @ 300mA, 3.5A
the emitter base voltage is kept at 7V
a transition frequency of 160MHz
ZXTN620MATA Applications
There are a lot of Diodes Incorporated
ZXTN620MATA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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