ZXTN619MATA
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- Mfr.Part #
- ZXTN619MATA
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-UDFN
- Datasheet
- Download
- Description
- TRANS NPN 50V 4A DFN2020B-3
- Stock
- 1,399
- In Stock ：
- 1,399
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Additional Feature :
- High Reliability
- Pbfree Code :
- yes
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 3
- Power Dissipation :
- 2.45W
- Package / Case :
- 3-UDFN
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 100V
- Pin Count :
- 3
- Emitter Base Voltage (VEBO) :
- 7V
- Mount :
- Surface Mount
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 2V
- Max Collector Current :
- 4A
- Case Connection :
- COLLECTOR
- Collector Emitter Breakdown Voltage :
- 50V
- Factory Lead Time :
- 15 Weeks
- Gain Bandwidth Product :
- 165MHz
- Packaging :
- Digi-Reel®
- Transition Frequency :
- 165MHz
- ECCN Code :
- EAR99
- Power - Max :
- 3W
- Transistor Type :
- NPN
- Operating Temperature :
- -55°C~150°C TJ
- Polarity/Channel Type :
- NPN
- Transistor Application :
- SWITCHING
- Length :
- 2.08mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Base Part Number :
- ZXTN619MA
- Collector Emitter Saturation Voltage :
- 320mV
- Vce Saturation (Max) @ Ib, Ic :
- 320mV @ 200mA, 4A
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 25nA
- RoHS Status :
- ROHS3 Compliant
- REACH SVHC :
- No SVHC
- Element Configuration :
- Single
- Max Power Dissipation :
- 2.45W
- Width :
- 2.075mm
- Frequency :
- 165MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Voltage (VCEO) :
- 50V
- Height :
- 580μm
- Continuous Collector Current :
- 4A
- Max Breakdown Voltage :
- 50V
- JESD-609 Code :
- e4
- Published :
- 2011
- Datasheets
- ZXTN619MATA
ZXTN619MATA Documents
NPN -55°C~150°C TJ 25nA 1 Elements 3 Terminations SILICON NPN 3-UDFN Digi-Reel® Surface Mount
ZXTN619MATA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 2A 2V DC current gain.As it features a collector emitter saturation voltage of 320mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 4A.Keeping the emitter base voltage at 7V can result in a high level of efficiency.There is a transition frequency of 165MHz in the part.Single BJT transistor can be broken down at a voltage of 50V volts.When collector current reaches its maximum, it can reach 4A volts.
ZXTN619MATA Features
the DC current gain for this device is 100 @ 2A 2V
a collector emitter saturation voltage of 320mV
the vce saturation(Max) is 320mV @ 200mA, 4A
the emitter base voltage is kept at 7V
a transition frequency of 165MHz
ZXTN619MATA Applications
There are a lot of Diodes Incorporated
ZXTN619MATA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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