ZXTN619MATA
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- Mfr.Part #
- ZXTN619MATA
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-UDFN
- Datasheet
- Download
- Description
- TRANS NPN 50V 4A DFN2020B-3
- Stock
- 1,399
- In Stock ：
- 1,399
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 7V
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e4
- Polarity/Channel Type :
- NPN
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 50V
- Pbfree Code :
- yes
- Package / Case :
- 3-UDFN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 2V
- Max Breakdown Voltage :
- 50V
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- 320mV
- Radiation Hardening :
- No
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 3
- Gain Bandwidth Product :
- 165MHz
- Case Connection :
- COLLECTOR
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 320mV @ 200mA, 4A
- Max Power Dissipation :
- 2.45W
- Terminal Position :
- Dual
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 15 Weeks
- Collector Base Voltage (VCBO) :
- 100V
- Width :
- 2.075mm
- Additional Feature :
- High Reliability
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Base Part Number :
- ZXTN619MA
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Height :
- 580μm
- Packaging :
- Digi-Reel®
- Continuous Collector Current :
- 4A
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Voltage (VCEO) :
- 50V
- Pin Count :
- 3
- Length :
- 2.08mm
- Max Collector Current :
- 4A
- Frequency :
- 165MHz
- Transition Frequency :
- 165MHz
- Current - Collector Cutoff (Max) :
- 25nA
- Lead Free :
- Lead Free
- Power - Max :
- 3W
- Power Dissipation :
- 2.45W
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2011
- Element Configuration :
- Single
- Datasheets
- ZXTN619MATA
NPN -55°C~150°C TJ 25nA 1 Elements 3 Terminations SILICON NPN 3-UDFN Digi-Reel® Surface Mount
ZXTN619MATA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 2A 2V DC current gain.As it features a collector emitter saturation voltage of 320mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 4A.Keeping the emitter base voltage at 7V can result in a high level of efficiency.There is a transition frequency of 165MHz in the part.Single BJT transistor can be broken down at a voltage of 50V volts.When collector current reaches its maximum, it can reach 4A volts.
ZXTN619MATA Features
the DC current gain for this device is 100 @ 2A 2V
a collector emitter saturation voltage of 320mV
the vce saturation(Max) is 320mV @ 200mA, 4A
the emitter base voltage is kept at 7V
a transition frequency of 165MHz
ZXTN619MATA Applications
There are a lot of Diodes Incorporated
ZXTN619MATA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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