ZXTN619MATA
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- Mfr.Part #
- ZXTN619MATA
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-UDFN
- Datasheet
- Download
- Description
- TRANS NPN 50V 4A DFN2020B-3
- Stock
- 1,399
- In Stock ：
- 1,399
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 7V
- Current - Collector Cutoff (Max) :
- 25nA
- Max Power Dissipation :
- 2.45W
- Number of Terminations :
- 3
- Terminal Position :
- Dual
- Number of Pins :
- 3
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Peak Reflow Temperature (Cel) :
- 260
- Base Part Number :
- ZXTN619MA
- Max Breakdown Voltage :
- 50V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pin Count :
- 3
- Continuous Collector Current :
- 4A
- Published :
- 2011
- Transition Frequency :
- 165MHz
- Additional Feature :
- High Reliability
- Collector Base Voltage (VCBO) :
- 100V
- JESD-609 Code :
- e4
- Width :
- 2.075mm
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 2.45W
- Factory Lead Time :
- 15 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 320mV @ 200mA, 4A
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Type :
- NPN
- Gain Bandwidth Product :
- 165MHz
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Length :
- 2.08mm
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 50V
- Height :
- 580μm
- Collector Emitter Voltage (VCEO) :
- 50V
- Package / Case :
- 3-UDFN
- Case Connection :
- COLLECTOR
- Number of Elements :
- 1
- Polarity/Channel Type :
- NPN
- Collector Emitter Saturation Voltage :
- 320mV
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Frequency :
- 165MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 2V
- Power - Max :
- 3W
- Max Collector Current :
- 4A
- Transistor Element Material :
- SILICON
- Packaging :
- Digi-Reel®
- Mount :
- Surface Mount
- Datasheets
- ZXTN619MATA
ZXTN619MATA Documents
NPN -55°C~150°C TJ 25nA 1 Elements 3 Terminations SILICON NPN 3-UDFN Digi-Reel® Surface Mount
ZXTN619MATA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 2A 2V DC current gain.As it features a collector emitter saturation voltage of 320mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 4A.Keeping the emitter base voltage at 7V can result in a high level of efficiency.There is a transition frequency of 165MHz in the part.Single BJT transistor can be broken down at a voltage of 50V volts.When collector current reaches its maximum, it can reach 4A volts.
ZXTN619MATA Features
the DC current gain for this device is 100 @ 2A 2V
a collector emitter saturation voltage of 320mV
the vce saturation(Max) is 320mV @ 200mA, 4A
the emitter base voltage is kept at 7V
a transition frequency of 165MHz
ZXTN619MATA Applications
There are a lot of Diodes Incorporated
ZXTN619MATA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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