ZXTN619MATA
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- Mfr.Part #
- ZXTN619MATA
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-UDFN
- Datasheet
- Download
- Description
- TRANS NPN 50V 4A DFN2020B-3
- Stock
- 1,399
- In Stock ：
- 1,399
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Peak Reflow Temperature (Cel) :
- 260
- Length :
- 2.08mm
- Package / Case :
- 3-UDFN
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Continuous Collector Current :
- 4A
- Transistor Type :
- NPN
- Power Dissipation :
- 2.45W
- Number of Pins :
- 3
- Pbfree Code :
- yes
- REACH SVHC :
- No SVHC
- Base Part Number :
- ZXTN619MA
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 320mV @ 200mA, 4A
- Height :
- 580μm
- Collector Base Voltage (VCBO) :
- 100V
- Published :
- 2011
- Additional Feature :
- High Reliability
- Max Breakdown Voltage :
- 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 2V
- Mounting Type :
- Surface Mount
- Pin Count :
- 3
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- -55°C~150°C TJ
- Transition Frequency :
- 165MHz
- Power - Max :
- 3W
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 2.45W
- Transistor Application :
- SWITCHING
- Collector Emitter Saturation Voltage :
- 320mV
- Width :
- 2.075mm
- JESD-609 Code :
- e4
- Factory Lead Time :
- 15 Weeks
- Frequency :
- 165MHz
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 50V
- Packaging :
- Digi-Reel®
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Collector Emitter Voltage (VCEO) :
- 50V
- Max Collector Current :
- 4A
- Current - Collector Cutoff (Max) :
- 25nA
- Emitter Base Voltage (VEBO) :
- 7V
- Terminal Position :
- Dual
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 165MHz
- Case Connection :
- COLLECTOR
- Datasheets
- ZXTN619MATA
ZXTN619MATA Documents
NPN -55°C~150°C TJ 25nA 1 Elements 3 Terminations SILICON NPN 3-UDFN Digi-Reel® Surface Mount
ZXTN619MATA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 2A 2V DC current gain.As it features a collector emitter saturation voltage of 320mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 4A.Keeping the emitter base voltage at 7V can result in a high level of efficiency.There is a transition frequency of 165MHz in the part.Single BJT transistor can be broken down at a voltage of 50V volts.When collector current reaches its maximum, it can reach 4A volts.
ZXTN619MATA Features
the DC current gain for this device is 100 @ 2A 2V
a collector emitter saturation voltage of 320mV
the vce saturation(Max) is 320mV @ 200mA, 4A
the emitter base voltage is kept at 7V
a transition frequency of 165MHz
ZXTN619MATA Applications
There are a lot of Diodes Incorporated
ZXTN619MATA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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