ZXTN619MATA
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- Mfr.Part #
- ZXTN619MATA
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-UDFN
- Datasheet
- Download
- Description
- TRANS NPN 50V 4A DFN2020B-3
- Stock
- 1,399
- In Stock ：
- 1,399
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 2V
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Pin Count :
- 3
- JESD-609 Code :
- e4
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Number of Elements :
- 1
- Base Part Number :
- ZXTN619MA
- Published :
- 2011
- RoHS Status :
- ROHS3 Compliant
- Frequency :
- 165MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Case Connection :
- COLLECTOR
- Lead Free :
- Lead Free
- Transition Frequency :
- 165MHz
- Emitter Base Voltage (VEBO) :
- 7V
- Max Power Dissipation :
- 2.45W
- Mount :
- Surface Mount
- Packaging :
- Digi-Reel®
- Collector Base Voltage (VCBO) :
- 100V
- Vce Saturation (Max) @ Ib, Ic :
- 320mV @ 200mA, 4A
- Package / Case :
- 3-UDFN
- Terminal Position :
- Dual
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 50V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 165MHz
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- Additional Feature :
- High Reliability
- Continuous Collector Current :
- 4A
- Current - Collector Cutoff (Max) :
- 25nA
- Factory Lead Time :
- 15 Weeks
- Height :
- 580μm
- Width :
- 2.075mm
- Pbfree Code :
- yes
- Power - Max :
- 3W
- Mounting Type :
- Surface Mount
- Transistor Type :
- NPN
- Polarity/Channel Type :
- NPN
- Collector Emitter Saturation Voltage :
- 320mV
- Transistor Application :
- SWITCHING
- Length :
- 2.08mm
- Power Dissipation :
- 2.45W
- REACH SVHC :
- No SVHC
- Peak Reflow Temperature (Cel) :
- 260
- Max Collector Current :
- 4A
- Max Breakdown Voltage :
- 50V
- Number of Pins :
- 3
- Datasheets
- ZXTN619MATA
ZXTN619MATA Documents
NPN -55°C~150°C TJ 25nA 1 Elements 3 Terminations SILICON NPN 3-UDFN Digi-Reel® Surface Mount
ZXTN619MATA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 2A 2V DC current gain.As it features a collector emitter saturation voltage of 320mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 4A.Keeping the emitter base voltage at 7V can result in a high level of efficiency.There is a transition frequency of 165MHz in the part.Single BJT transistor can be broken down at a voltage of 50V volts.When collector current reaches its maximum, it can reach 4A volts.
ZXTN619MATA Features
the DC current gain for this device is 100 @ 2A 2V
a collector emitter saturation voltage of 320mV
the vce saturation(Max) is 320mV @ 200mA, 4A
the emitter base voltage is kept at 7V
a transition frequency of 165MHz
ZXTN619MATA Applications
There are a lot of Diodes Incorporated
ZXTN619MATA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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