ZXTN619MATA
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- Mfr.Part #
- ZXTN619MATA
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-UDFN
- Datasheet
- Download
- Description
- TRANS NPN 50V 4A DFN2020B-3
- Stock
- 1,399
- In Stock ：
- 1,399
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Length :
- 2.08mm
- Pbfree Code :
- yes
- Width :
- 2.075mm
- Continuous Collector Current :
- 4A
- Mount :
- Surface Mount
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 2V
- Current - Collector Cutoff (Max) :
- 25nA
- Element Configuration :
- Single
- Packaging :
- Digi-Reel®
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 7V
- Max Breakdown Voltage :
- 50V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Additional Feature :
- High Reliability
- Radiation Hardening :
- No
- Height :
- 580μm
- Package / Case :
- 3-UDFN
- Transition Frequency :
- 165MHz
- Operating Temperature :
- -55°C~150°C TJ
- Max Power Dissipation :
- 2.45W
- Power Dissipation :
- 2.45W
- Published :
- 2011
- Vce Saturation (Max) @ Ib, Ic :
- 320mV @ 200mA, 4A
- Pin Count :
- 3
- Factory Lead Time :
- 15 Weeks
- Transistor Type :
- NPN
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Power - Max :
- 3W
- Peak Reflow Temperature (Cel) :
- 260
- JESD-609 Code :
- e4
- Number of Terminations :
- 3
- Terminal Position :
- Dual
- Case Connection :
- COLLECTOR
- Max Collector Current :
- 4A
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Gain Bandwidth Product :
- 165MHz
- Collector Base Voltage (VCBO) :
- 100V
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 50V
- REACH SVHC :
- No SVHC
- Collector Emitter Breakdown Voltage :
- 50V
- Collector Emitter Saturation Voltage :
- 320mV
- Frequency :
- 165MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Polarity/Channel Type :
- NPN
- Number of Elements :
- 1
- Base Part Number :
- ZXTN619MA
- Datasheets
- ZXTN619MATA
ZXTN619MATA Documents
NPN -55°C~150°C TJ 25nA 1 Elements 3 Terminations SILICON NPN 3-UDFN Digi-Reel® Surface Mount
ZXTN619MATA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 2A 2V DC current gain.As it features a collector emitter saturation voltage of 320mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 4A.Keeping the emitter base voltage at 7V can result in a high level of efficiency.There is a transition frequency of 165MHz in the part.Single BJT transistor can be broken down at a voltage of 50V volts.When collector current reaches its maximum, it can reach 4A volts.
ZXTN619MATA Features
the DC current gain for this device is 100 @ 2A 2V
a collector emitter saturation voltage of 320mV
the vce saturation(Max) is 320mV @ 200mA, 4A
the emitter base voltage is kept at 7V
a transition frequency of 165MHz
ZXTN619MATA Applications
There are a lot of Diodes Incorporated
ZXTN619MATA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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