ZXTN5551ZTA
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- Mfr.Part #
- ZXTN5551ZTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 160V 0.6A SOT89-3
- Stock
- 272,665
- In Stock ：
- 272,665
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 1.2W
- Weight :
- 51.993025mg
- Peak Reflow Temperature (Cel) :
- 260
- REACH SVHC :
- No SVHC
- Max Power Dissipation :
- 1.2W
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Transition Frequency :
- 130MHz
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 5mA, 50mA
- Pbfree Code :
- yes
- Mount :
- Surface Mount
- Number of Terminations :
- 3
- Frequency :
- 130MHz
- Transistor Application :
- AMPLIFIER
- Factory Lead Time :
- 17 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Pins :
- 4
- Max Breakdown Voltage :
- 160V
- JESD-609 Code :
- e3
- Packaging :
- Cut Tape (CT)
- Package / Case :
- TO-243AA
- Width :
- 2.6mm
- Max Collector Current :
- 600mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 10mA 5V
- Length :
- 4.6mm
- Published :
- 2007
- Gain Bandwidth Product :
- 130MHz
- Height :
- 1.6mm
- Emitter Base Voltage (VEBO) :
- 6V
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Number of Elements :
- 1
- JESD-30 Code :
- R-PSSO-F3
- Transistor Type :
- NPN
- Collector Base Voltage (VCBO) :
- 180V
- Element Configuration :
- Single
- Base Part Number :
- ZXTN5551
- Pin Count :
- 3
- Polarity/Channel Type :
- NPN
- Case Connection :
- COLLECTOR
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 160V
- Terminal Form :
- Flat
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Breakdown Voltage :
- 160V
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Matte Tin (Sn)
- Mounting Type :
- Surface Mount
- Datasheets
- ZXTN5551ZTA
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Cut Tape (CT) Surface Mount
ZXTN5551ZTA Overview
In this device, the DC current gain is 80 @ 10mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 200mV @ 5mA, 50mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 130MHz.Input voltage breakdown is available at 160V volts.Single BJT transistor is possible for the collector current to fall as low as 600mA volts at Single BJT transistors maximum.
ZXTN5551ZTA Features
the DC current gain for this device is 80 @ 10mA 5V
the vce saturation(Max) is 200mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 130MHz
ZXTN5551ZTA Applications
There are a lot of Diodes Incorporated
ZXTN5551ZTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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