ZXTN4006ZTA
- Mfr.Part #
- ZXTN4006ZTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 200V 1A SOT89-3
- Stock
- 21,634
- In Stock :
- 21,634
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Transistor Type :
- NPN
- Additional Feature :
- High Reliability
- Operating Temperature :
- -55°C~150°C TJ
- JESD-30 Code :
- R-PSSO-F3
- Continuous Collector Current :
- 1A
- Collector Emitter Breakdown Voltage :
- 200V
- Peak Reflow Temperature (Cel) :
- 260
- Max Breakdown Voltage :
- 200V
- Package / Case :
- TO-243AA
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- Case Connection :
- COLLECTOR
- Collector Emitter Voltage (VCEO) :
- 200V
- Height :
- 1.6mm
- Number of Elements :
- 1
- Polarity/Channel Type :
- NPN
- Collector Base Voltage (VCBO) :
- 200V
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 1.5W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2012
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 320mV
- Width :
- 2.6mm
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 1.5W
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- 7V
- Base Part Number :
- ZXTN4006
- Max Collector Current :
- 1A
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Element Configuration :
- Single
- Weight :
- 51.993025mg
- REACH SVHC :
- No SVHC
- Length :
- 4.6mm
- Radiation Hardening :
- No
- Number of Pins :
- 4
- Terminal Finish :
- Matte Tin (Sn)
- Terminal Form :
- Flat
- Factory Lead Time :
- 15 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mount :
- Surface Mount
- Pbfree Code :
- yes
- Datasheets
- ZXTN4006ZTA
ZXTN4006ZTA Documents

NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
ZXTN4006ZTA Overview
In this device, the DC current gain is 100 @ 150mA 320mV, which is the ratio between the base current and the collector current.A 1A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 7V, an efficient operation can be achieved.Input voltage breakdown is available at 200V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
ZXTN4006ZTA Features
the DC current gain for this device is 100 @ 150mA 320mV
the emitter base voltage is kept at 7V
ZXTN4006ZTA Applications
There are a lot of Diodes Incorporated
ZXTN4006ZTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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