ZXTN25100DFHTA
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- Mfr.Part #
- ZXTN25100DFHTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 100V 2.5A SOT23-3
- Stock
- 642
- In Stock ：
- 642
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 10mA 2V
- Packaging :
- Tape and Reel (TR)
- Max Collector Current :
- 2.5A
- Factory Lead Time :
- 11 Weeks
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Frequency :
- 175MHz
- Weight :
- 7.994566mg
- Transition Frequency :
- 175MHz
- Collector Base Voltage (VCBO) :
- 180V
- Pbfree Code :
- yes
- Emitter Base Voltage (VEBO) :
- 7V
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Terminal Form :
- Gull wing
- Gain Bandwidth Product :
- 175MHz
- Radiation Hardening :
- No
- Polarity/Channel Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 330mV @ 250mA, 2.5A
- Peak Reflow Temperature (Cel) :
- 260
- Power - Max :
- 1.25W
- Height :
- 1mm
- Base Part Number :
- ZXTN25100D
- Terminal Finish :
- Matte Tin (Sn)
- Collector Emitter Saturation Voltage :
- 330mV
- Number of Pins :
- 3
- Power Dissipation :
- 1.81W
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Width :
- 1.4mm
- Max Power Dissipation :
- 1.81W
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2006
- JESD-609 Code :
- e3
- Terminal Position :
- Dual
- Collector Emitter Voltage (VCEO) :
- 100V
- REACH SVHC :
- No SVHC
- Max Breakdown Voltage :
- 100V
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 100V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Length :
- 3.05mm
- Mount :
- Surface Mount
- Transistor Type :
- NPN
- Datasheets
- ZXTN25100DFHTA
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
ZXTN25100DFHTA Overview
This device has a DC current gain of 300 @ 10mA 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 330mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 7V to achieve high efficiency.In this part, there is a transition frequency of 175MHz.As a result, it can handle voltages as low as 100V volts.The maximum collector current is 2.5A volts.
ZXTN25100DFHTA Features
the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of 330mV
the vce saturation(Max) is 330mV @ 250mA, 2.5A
the emitter base voltage is kept at 7V
a transition frequency of 175MHz
ZXTN25100DFHTA Applications
There are a lot of Diodes Incorporated
ZXTN25100DFHTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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