ZXTN25100BFHTA
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- Mfr.Part #
- ZXTN25100BFHTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 100V 3A SOT23-3
- Stock
- 9,132
- In Stock ：
- 9,132
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 170V
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- 100V
- Collector Emitter Voltage (VCEO) :
- 100V
- Voltage - Collector Emitter Breakdown (Max) :
- 100V
- Supplier Device Package :
- SOT-23-3
- Height :
- 1mm
- Collector Emitter Saturation Voltage :
- 250mV
- Emitter Base Voltage (VEBO) :
- 7V
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 300mA, 3A
- Power Dissipation :
- 1.81W
- Polarity :
- NPN
- REACH SVHC :
- No SVHC
- Transistor Type :
- NPN
- Power - Max :
- 1.25W
- Width :
- 1.4mm
- Number of Pins :
- 3
- Contact Plating :
- Tin
- Published :
- 2006
- Max Operating Temperature :
- 150°C
- Factory Lead Time :
- 15 Weeks
- Radiation Hardening :
- No
- Min Operating Temperature :
- -55°C
- Number of Elements :
- 1
- Element Configuration :
- Single
- Mount :
- Surface Mount
- Gain Bandwidth Product :
- 160MHz
- Max Breakdown Voltage :
- 100V
- Collector Emitter Breakdown Voltage :
- 100V
- Max Collector Current :
- 3A
- Current - Collector (Ic) (Max) :
- 3A
- Length :
- 3.05mm
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 1.81W
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 2V
- Frequency - Transition :
- 160MHz
- Max Frequency :
- 160MHz
- Base Part Number :
- ZXTN25100
- Frequency :
- 160MHz
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Packaging :
- Tape and Reel (TR)
- Weight :
- 7.994566mg
- Current Rating :
- 3A
- Datasheets
- ZXTN25100BFHTA
NPN -55°C~150°C TJ 50nA ICBO 1 Elements TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
ZXTN25100BFHTA Overview
In this device, the DC current gain is 100 @ 10mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 250mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 300mA, 3A.With the emitter base voltage set at 7V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 3A for this device.Input voltage breakdown is available at 100V volts.Product comes in the supplier's device package SOT-23-3.There is a 100V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
ZXTN25100BFHTA Features
the DC current gain for this device is 100 @ 10mA 2V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 300mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is 3A
the supplier device package of SOT-23-3
ZXTN25100BFHTA Applications
There are a lot of Diodes Incorporated
ZXTN25100BFHTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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