ZXTN25060BFHTA
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- Mfr.Part #
- ZXTN25060BFHTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 3.5A SOT23-3
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- Voltage - Rated DC :
- 60V
- Power Dissipation :
- 1.81W
- Collector Base Voltage (VCBO) :
- 150V
- Terminal Form :
- Gull wing
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 60V
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Transistor Type :
- NPN
- Max Breakdown Voltage :
- 60V
- Power - Max :
- 1.25W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 2V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Frequency :
- 185MHz
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Weight :
- 7.994566mg
- Collector Emitter Saturation Voltage :
- 150mV
- Max Collector Current :
- 3.5A
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Published :
- 2006
- Width :
- 1.4mm
- Pin Count :
- 3
- Polarity/Channel Type :
- NPN
- Gain Bandwidth Product :
- 185MHz
- Terminal Finish :
- Matte Tin (Sn)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- REACH SVHC :
- No SVHC
- Emitter Base Voltage (VEBO) :
- 7V
- Height :
- 1mm
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 3
- Current Rating :
- 3.5A
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Element Material :
- SILICON
- Length :
- 3.05mm
- Factory Lead Time :
- 11 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 175mV @ 350mA, 3.5A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Breakdown Voltage :
- 60V
- Transition Frequency :
- 185MHz
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 1.81W
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Base Part Number :
- ZXTN25060B
- Terminal Position :
- Dual
- Datasheets
- ZXTN25060BFHTA
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
ZXTN25060BFHTA Overview
DC current gain in this device equals 100 @ 10mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 150mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 175mV @ 350mA, 3.5A.An emitter's base voltage can be kept at 7V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 3.5A current rating.As a result, the part has a transition frequency of 185MHz.Breakdown input voltage is 60V volts.In extreme cases, the collector current can be as low as 3.5A volts.
ZXTN25060BFHTA Features
the DC current gain for this device is 100 @ 10mA 2V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 175mV @ 350mA, 3.5A
the emitter base voltage is kept at 7V
the current rating of this device is 3.5A
a transition frequency of 185MHz
ZXTN25060BFHTA Applications
There are a lot of Diodes Incorporated
ZXTN25060BFHTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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