ZXTN25060BFHTA
- Mfr.Part #
- ZXTN25060BFHTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 3.5A SOT23-3
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 60V
- Power - Max :
- 1.25W
- Operating Temperature :
- -55°C~150°C TJ
- Current Rating :
- 3.5A
- Number of Elements :
- 1
- Length :
- 3.05mm
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 185MHz
- Pbfree Code :
- yes
- Collector Base Voltage (VCBO) :
- 150V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Power Dissipation :
- 1.81W
- Terminal Form :
- Gull wing
- Terminal Finish :
- Matte Tin (Sn)
- Transistor Type :
- NPN
- Width :
- 1.4mm
- Power Dissipation :
- 1.81W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 2V
- Number of Terminations :
- 3
- Factory Lead Time :
- 11 Weeks
- Base Part Number :
- ZXTN25060B
- Vce Saturation (Max) @ Ib, Ic :
- 175mV @ 350mA, 3.5A
- Weight :
- 7.994566mg
- Emitter Base Voltage (VEBO) :
- 7V
- Gain Bandwidth Product :
- 185MHz
- Transistor Application :
- SWITCHING
- Height :
- 1mm
- Pin Count :
- 3
- Terminal Position :
- Dual
- ECCN Code :
- EAR99
- Max Breakdown Voltage :
- 60V
- Collector Emitter Breakdown Voltage :
- 60V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- JESD-609 Code :
- e3
- Collector Emitter Saturation Voltage :
- 150mV
- Mount :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Frequency :
- 185MHz
- Polarity/Channel Type :
- NPN
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 3
- Mounting Type :
- Surface Mount
- Published :
- 2006
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- Max Collector Current :
- 3.5A
- Voltage - Rated DC :
- 60V
- REACH SVHC :
- No SVHC
- Datasheets
- ZXTN25060BFHTA

NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
ZXTN25060BFHTA Overview
DC current gain in this device equals 100 @ 10mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 150mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 175mV @ 350mA, 3.5A.An emitter's base voltage can be kept at 7V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 3.5A current rating.As a result, the part has a transition frequency of 185MHz.Breakdown input voltage is 60V volts.In extreme cases, the collector current can be as low as 3.5A volts.
ZXTN25060BFHTA Features
the DC current gain for this device is 100 @ 10mA 2V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 175mV @ 350mA, 3.5A
the emitter base voltage is kept at 7V
the current rating of this device is 3.5A
a transition frequency of 185MHz
ZXTN25060BFHTA Applications
There are a lot of Diodes Incorporated
ZXTN25060BFHTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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