ZXTN25050DFHTA
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- Mfr.Part #
- ZXTN25050DFHTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 50V 4A SOT23-3
- Stock
- 30,197
- In Stock ：
- 30,197
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 200MHz
- Terminal Form :
- Gull wing
- Max Collector Current :
- 4A
- Vce Saturation (Max) @ Ib, Ic :
- 210mV @ 400mA, 4A
- Continuous Collector Current :
- 4A
- Weight :
- 7.994566mg
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- 260mV
- Power Dissipation :
- 1.81W
- Pin Count :
- 3
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Mount :
- Surface Mount
- Voltage - Rated DC :
- 50V
- Lead Free :
- Lead Free
- Base Part Number :
- ZXTN25050
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Breakdown Voltage :
- 50V
- Published :
- 2006
- Transistor Type :
- NPN
- Max Power Dissipation :
- 1.25W
- Terminal Finish :
- Matte Tin (Sn)
- Current Rating :
- 4A
- RoHS Status :
- ROHS3 Compliant
- Frequency :
- 200MHz
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- hFE Min :
- 300
- Max Breakdown Voltage :
- 50V
- Length :
- 3.05mm
- Number of Elements :
- 1
- Factory Lead Time :
- 15 Weeks
- Terminal Position :
- Dual
- Collector Base Voltage (VCBO) :
- 150V
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 50V
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Gain Bandwidth Product :
- 200MHz
- Height :
- 1mm
- Polarity/Channel Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- 7V
- Width :
- 1.4mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 10mA 2V
- Element Configuration :
- Single
- Datasheets
- ZXTN25050DFHTA
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
ZXTN25050DFHTA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 300 @ 10mA 2V.The collector emitter saturation voltage is 260mV, which allows for maximum design flexibility.When VCE saturation is 210mV @ 400mA, 4A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 4A for high efficiency.Emitter base voltages of 7V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 4A.In the part, the transition frequency is 200MHz.This device can take an input voltage of 50V volts before it breaks down.A maximum collector current of 4A volts can be achieved.
ZXTN25050DFHTA Features
the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of 260mV
the vce saturation(Max) is 210mV @ 400mA, 4A
the emitter base voltage is kept at 7V
the current rating of this device is 4A
a transition frequency of 200MHz
ZXTN25050DFHTA Applications
There are a lot of Diodes Incorporated
ZXTN25050DFHTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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