ZXTN25050DFHTA
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- Mfr.Part #
- ZXTN25050DFHTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 50V 4A SOT23-3
- Stock
- 30,197
- In Stock ：
- 30,197
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 4A
- Collector Emitter Breakdown Voltage :
- 50V
- Packaging :
- Tape and Reel (TR)
- Max Power Dissipation :
- 1.25W
- Width :
- 1.4mm
- Polarity/Channel Type :
- NPN
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Factory Lead Time :
- 15 Weeks
- Mounting Type :
- Surface Mount
- Published :
- 2006
- Collector Emitter Saturation Voltage :
- 260mV
- Pin Count :
- 3
- Transistor Application :
- SWITCHING
- Transition Frequency :
- 200MHz
- Transistor Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 50V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Base Part Number :
- ZXTN25050
- Number of Elements :
- 1
- Mount :
- Surface Mount
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 260
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Length :
- 3.05mm
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 1.81W
- Weight :
- 7.994566mg
- Max Breakdown Voltage :
- 50V
- Vce Saturation (Max) @ Ib, Ic :
- 210mV @ 400mA, 4A
- Frequency :
- 200MHz
- Terminal Finish :
- Matte Tin (Sn)
- Emitter Base Voltage (VEBO) :
- 7V
- Terminal Form :
- Gull wing
- Operating Temperature :
- -55°C~150°C TJ
- Collector Base Voltage (VCBO) :
- 150V
- Terminal Position :
- Dual
- JESD-609 Code :
- e3
- hFE Min :
- 300
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 10mA 2V
- Gain Bandwidth Product :
- 200MHz
- Current Rating :
- 4A
- Lead Free :
- Lead Free
- Height :
- 1mm
- Voltage - Rated DC :
- 50V
- Number of Terminations :
- 3
- Continuous Collector Current :
- 4A
- Datasheets
- ZXTN25050DFHTA
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
ZXTN25050DFHTA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 300 @ 10mA 2V.The collector emitter saturation voltage is 260mV, which allows for maximum design flexibility.When VCE saturation is 210mV @ 400mA, 4A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 4A for high efficiency.Emitter base voltages of 7V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 4A.In the part, the transition frequency is 200MHz.This device can take an input voltage of 50V volts before it breaks down.A maximum collector current of 4A volts can be achieved.
ZXTN25050DFHTA Features
the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of 260mV
the vce saturation(Max) is 210mV @ 400mA, 4A
the emitter base voltage is kept at 7V
the current rating of this device is 4A
a transition frequency of 200MHz
ZXTN25050DFHTA Applications
There are a lot of Diodes Incorporated
ZXTN25050DFHTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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