ZXTN25040DZTA
- Mfr.Part #
- ZXTN25040DZTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 40V 5A SOT89-3
- Stock
- 762
- In Stock :
- 762
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -55°C~150°C TJ
- Height :
- 1.6mm
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Element Configuration :
- Single
- Factory Lead Time :
- 15 Weeks
- Max Breakdown Voltage :
- 40V
- Terminal Form :
- Flat
- Base Part Number :
- ZXTN25040D
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Lead Free :
- Lead Free
- Case Connection :
- COLLECTOR
- Transistor Type :
- NPN
- Frequency :
- 190MHz
- Emitter Base Voltage (VEBO) :
- 7V
- Collector Base Voltage (VCBO) :
- 130V
- Gain Bandwidth Product :
- 190MHz
- Number of Pins :
- 4
- Peak Reflow Temperature (Cel) :
- 260
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 40V
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 260mV @ 500mA, 5A
- JESD-30 Code :
- R-PSSO-F3
- Terminal Finish :
- Matte Tin (Sn)
- Radiation Hardening :
- No
- Published :
- 2006
- Weight :
- 51.993025mg
- Width :
- 2.6mm
- Power - Max :
- 2.4W
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- NPN
- Package / Case :
- TO-243AA
- Power Dissipation :
- 4.46W
- Collector Emitter Breakdown Voltage :
- 40V
- JESD-609 Code :
- e3
- Length :
- 4.6mm
- Max Collector Current :
- 5A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 10mA 2V
- Transition Frequency :
- 190MHz
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Pin Count :
- 3
- Max Power Dissipation :
- 4.46W
- Datasheets
- ZXTN25040DZTA

NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
ZXTN25040DZTA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 300 @ 10mA 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 260mV @ 500mA, 5A.The emitter base voltage can be kept at 7V for high efficiency.The part has a transition frequency of 190MHz.The breakdown input voltage is 40V volts.Single BJT transistor is possible to have a collector current as low as 5A volts at Single BJT transistors maximum.
ZXTN25040DZTA Features
the DC current gain for this device is 300 @ 10mA 2V
the vce saturation(Max) is 260mV @ 500mA, 5A
the emitter base voltage is kept at 7V
a transition frequency of 190MHz
ZXTN25040DZTA Applications
There are a lot of Diodes Incorporated
ZXTN25040DZTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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