ZXTN25040DZTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 10mA 2V

Package / Case :

TO-243AA

Published :

2006

Lead Free :

Lead Free

Collector Emitter Voltage (VCEO) :

40V

Element Configuration :

Single

Collector Base Voltage (VCBO) :

130V

Frequency :

190MHz

Collector Emitter Breakdown Voltage :

40V

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

Polarity/Channel Type :

NPN

Time@Peak Reflow Temperature-Max (s) :

40

Number of Elements :

1

Factory Lead Time :

15 Weeks

Transistor Type :

NPN

Base Part Number :

ZXTN25040D

Length :

4.6mm

Weight :

51.993025mg

Width :

2.6mm

Max Power Dissipation :

4.46W

Vce Saturation (Max) @ Ib, Ic :

260mV @ 500mA, 5A

Number of Terminations :

3

Max Collector Current :

5A

Current - Collector Cutoff (Max) :

50nA ICBO

Terminal Form :

Flat

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Pbfree Code :

yes

Gain Bandwidth Product :

190MHz

Peak Reflow Temperature (Cel) :

260

Pin Count :

3

Radiation Hardening :

No

Height :

1.6mm

Number of Pins :

4

Emitter Base Voltage (VEBO) :

7V

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSSO-F3

Operating Temperature :

-55°C~150°C TJ

Case Connection :

COLLECTOR

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

4.46W

Transition Frequency :

190MHz

Power - Max :

2.4W

Max Breakdown Voltage :

40V

JESD-609 Code :

e3