ZXTN25040DZTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Polarity/Channel Type :

NPN

Length :

4.6mm

Published :

2006

Max Power Dissipation :

4.46W

Radiation Hardening :

No

Pin Count :

3

Mount :

Surface Mount

Transistor Type :

NPN

Emitter Base Voltage (VEBO) :

7V

Packaging :

Tape and Reel (TR)

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 10mA 2V

Case Connection :

COLLECTOR

Power - Max :

2.4W

Transition Frequency :

190MHz

Terminal Form :

Flat

Power Dissipation :

4.46W

Terminal Finish :

Matte Tin (Sn)

Number of Elements :

1

Frequency :

190MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

2.6mm

RoHS Status :

ROHS3 Compliant

Max Breakdown Voltage :

40V

Max Collector Current :

5A

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Base Part Number :

ZXTN25040D

Time@Peak Reflow Temperature-Max (s) :

40

Number of Pins :

4

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-F3

Weight :

51.993025mg

Element Configuration :

Single

Collector Base Voltage (VCBO) :

130V

ECCN Code :

EAR99

Collector Emitter Breakdown Voltage :

40V

Current - Collector Cutoff (Max) :

50nA ICBO

Pbfree Code :

yes

JESD-609 Code :

e3

Gain Bandwidth Product :

190MHz

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Height :

1.6mm

Lead Free :

Lead Free

Number of Terminations :

3

Collector Emitter Voltage (VCEO) :

40V

Package / Case :

TO-243AA

Vce Saturation (Max) @ Ib, Ic :

260mV @ 500mA, 5A

Factory Lead Time :

15 Weeks