ZXTN25040DFLTA
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- Mfr.Part #
- ZXTN25040DFLTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 40V 1.5A SOT23-3
- Stock
- 7,931
- In Stock ：
- 7,931
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 10mA 2V
- Polarity/Channel Type :
- NPN
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 15 Weeks
- Transistor Type :
- NPN
- Voltage - Rated DC :
- 40V
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- 85mV
- Width :
- 1.4mm
- Collector Emitter Breakdown Voltage :
- 40V
- Terminal Finish :
- Matte Tin (Sn)
- Height :
- 1mm
- Max Collector Current :
- 1.5A
- Frequency :
- 190MHz
- Emitter Base Voltage (VEBO) :
- 7V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pin Count :
- 3
- Base Part Number :
- ZXTN25040D
- Number of Pins :
- 3
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Collector Base Voltage (VCBO) :
- 130V
- Number of Terminations :
- 3
- Continuous Collector Current :
- 1.5A
- Element Configuration :
- Single
- Terminal Form :
- Gull wing
- Terminal Position :
- Dual
- Max Breakdown Voltage :
- 40V
- ECCN Code :
- EAR99
- Published :
- 2006
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Length :
- 3.05mm
- REACH SVHC :
- No SVHC
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 190MHz
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Current Rating :
- 1.5A
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 130V
- Gain Bandwidth Product :
- 190MHz
- Max Power Dissipation :
- 350mW
- Vce Saturation (Max) @ Ib, Ic :
- 285mV @ 400mA, 4A
- Pbfree Code :
- yes
- Weight :
- 7.994566mg
- Power Dissipation :
- 350mW
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Datasheets
- ZXTN25040DFLTA
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
ZXTN25040DFLTA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 300 @ 10mA 2V.With a collector emitter saturation voltage of 85mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 285mV @ 400mA, 4A.In order to achieve high efficiency, the continuous collector voltage should be kept at 1.5A.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 1.5A.A transition frequency of 190MHz is present in the part.There is a breakdown input voltage of 40V volts that it can take.Collector current can be as low as 1.5A volts at its maximum.
ZXTN25040DFLTA Features
the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of 85mV
the vce saturation(Max) is 285mV @ 400mA, 4A
the emitter base voltage is kept at 7V
the current rating of this device is 1.5A
a transition frequency of 190MHz
ZXTN25040DFLTA Applications
There are a lot of Diodes Incorporated
ZXTN25040DFLTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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