ZXTN25040DFLTA
- Mfr.Part #
- ZXTN25040DFLTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 40V 1.5A SOT23-3
- Stock
- 7,931
- In Stock :
- 7,931
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 190MHz
- Factory Lead Time :
- 15 Weeks
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Gain Bandwidth Product :
- 190MHz
- Transistor Type :
- NPN
- Terminal Finish :
- Matte Tin (Sn)
- REACH SVHC :
- No SVHC
- Voltage - Rated DC :
- 40V
- Polarity/Channel Type :
- NPN
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 10mA 2V
- Width :
- 1.4mm
- Height :
- 1mm
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 285mV @ 400mA, 4A
- Max Power Dissipation :
- 350mW
- Pbfree Code :
- yes
- Length :
- 3.05mm
- Terminal Form :
- Gull wing
- Operating Temperature :
- -55°C~150°C TJ
- Pin Count :
- 3
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Terminal Position :
- Dual
- Mount :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 130V
- Published :
- 2006
- Collector Emitter Saturation Voltage :
- 85mV
- Number of Pins :
- 3
- Max Collector Current :
- 1.5A
- Weight :
- 7.994566mg
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 130V
- Emitter Base Voltage (VEBO) :
- 7V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Collector Current :
- 1.5A
- Base Part Number :
- ZXTN25040D
- Power Dissipation :
- 350mW
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 40V
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Current Rating :
- 1.5A
- Max Breakdown Voltage :
- 40V
- Frequency :
- 190MHz
- Datasheets
- ZXTN25040DFLTA

NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
ZXTN25040DFLTA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 300 @ 10mA 2V.With a collector emitter saturation voltage of 85mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 285mV @ 400mA, 4A.In order to achieve high efficiency, the continuous collector voltage should be kept at 1.5A.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 1.5A.A transition frequency of 190MHz is present in the part.There is a breakdown input voltage of 40V volts that it can take.Collector current can be as low as 1.5A volts at its maximum.
ZXTN25040DFLTA Features
the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of 85mV
the vce saturation(Max) is 285mV @ 400mA, 4A
the emitter base voltage is kept at 7V
the current rating of this device is 1.5A
a transition frequency of 190MHz
ZXTN25040DFLTA Applications
There are a lot of Diodes Incorporated
ZXTN25040DFLTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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