ZXTN25020DZTA
- Mfr.Part #
- ZXTN25020DZTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 20V 6A SOT89-3
- Stock
- 28,501
- In Stock :
- 28,501
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 10mA 2V
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 20V
- Transition Frequency :
- 215MHz
- RoHS Status :
- ROHS3 Compliant
- Length :
- 4.6mm
- Published :
- 2008
- REACH SVHC :
- No SVHC
- Weight :
- 51.993025mg
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- NPN
- Terminal Finish :
- Matte Tin (Sn)
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Mount :
- Surface Mount
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Terminal Form :
- Flat
- Gain Bandwidth Product :
- 215MHz
- Mounting Type :
- Surface Mount
- Power - Max :
- 2.4W
- JESD-30 Code :
- R-PSSO-F3
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Case Connection :
- COLLECTOR
- Width :
- 2.6mm
- Max Power Dissipation :
- 4.46W
- Max Collector Current :
- 6A
- Power Dissipation :
- 4.46W
- Package / Case :
- TO-243AA
- Pin Count :
- 3
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- NPN
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 270mV @ 300mA, 6A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Terminations :
- 3
- Number of Pins :
- 4
- Max Breakdown Voltage :
- 20V
- Height :
- 1.6mm
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 7V
- Peak Reflow Temperature (Cel) :
- 260
- Frequency :
- 215MHz
- Base Part Number :
- ZXTN25020D
- Collector Base Voltage (VCBO) :
- 100V
- Collector Emitter Breakdown Voltage :
- 20V
- Factory Lead Time :
- 15 Weeks
- Datasheets
- ZXTN25020DZTA

NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
ZXTN25020DZTA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 300 @ 10mA 2V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 7V can result in a high level of efficiency.There is a transition frequency of 215MHz in the part.Single BJT transistor can be broken down at a voltage of 20V volts.When collector current reaches its maximum, it can reach 6A volts.
ZXTN25020DZTA Features
the DC current gain for this device is 300 @ 10mA 2V
the vce saturation(Max) is 270mV @ 300mA, 6A
the emitter base voltage is kept at 7V
a transition frequency of 215MHz
ZXTN25020DZTA Applications
There are a lot of Diodes Incorporated
ZXTN25020DZTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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