ZXTN25020DZTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Breakdown Voltage :

20V

Transistor Type :

NPN

Terminal Finish :

Matte Tin (Sn)

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Flat

Packaging :

Tape and Reel (TR)

Length :

4.6mm

Collector Base Voltage (VCBO) :

100V

Mount :

Surface Mount

Radiation Hardening :

No

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 10mA 2V

Power - Max :

2.4W

Frequency :

215MHz

Height :

1.6mm

Weight :

51.993025mg

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Transistor Element Material :

SILICON

Emitter Base Voltage (VEBO) :

7V

Base Part Number :

ZXTN25020D

Polarity/Channel Type :

NPN

Element Configuration :

Single

Factory Lead Time :

15 Weeks

Max Power Dissipation :

4.46W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Collector Emitter Voltage (VCEO) :

20V

Published :

2008

JESD-30 Code :

R-PSSO-F3

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Case Connection :

COLLECTOR

Max Collector Current :

6A

Power Dissipation :

4.46W

Number of Elements :

1

Max Breakdown Voltage :

20V

Pin Count :

3

Width :

2.6mm

Gain Bandwidth Product :

215MHz

Package / Case :

TO-243AA

Current - Collector Cutoff (Max) :

50nA ICBO

Transition Frequency :

215MHz

Time@Peak Reflow Temperature-Max (s) :

40

Vce Saturation (Max) @ Ib, Ic :

270mV @ 300mA, 6A

Pbfree Code :

yes

Number of Pins :

4