ZXTN25020DGTA
- Mfr.Part #
- ZXTN25020DGTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 20V 7A SOT223-3
- Stock
- 52,966
- In Stock :
- 52,966
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 290mV @ 700mA, 7A
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 100V
- Collector Emitter Voltage (VCEO) :
- 20V
- Pin Count :
- 4
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mount :
- Surface Mount
- Number of Terminations :
- 4
- REACH SVHC :
- No SVHC
- Base Part Number :
- ZXTN25020D
- Number of Pins :
- 4
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- Max Breakdown Voltage :
- 20V
- Lead Free :
- Lead Free
- Frequency :
- 215MHz
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Width :
- 3.7mm
- Pbfree Code :
- No
- Collector Emitter Breakdown Voltage :
- 20V
- Number of Elements :
- 1
- Length :
- 6.7mm
- Operating Temperature :
- -55°C~150°C TJ
- Gain Bandwidth Product :
- 215MHz
- Transistor Element Material :
- SILICON
- Power - Max :
- 3W
- Terminal Finish :
- Matte Tin (Sn)
- Emitter Base Voltage (VEBO) :
- 7V
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Single
- Factory Lead Time :
- 15 Weeks
- Transistor Type :
- NPN
- Terminal Form :
- Gull wing
- Transition Frequency :
- 215MHz
- Max Collector Current :
- 7A
- Height :
- 1.65mm
- Polarity/Channel Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Dual
- Max Power Dissipation :
- 5.3W
- Power Dissipation :
- 5.3W
- Package / Case :
- TO-261-4, TO-261AA
- Case Connection :
- COLLECTOR
- Weight :
- 7.994566mg
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 10mA 2V
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Published :
- 2008
- Datasheets
- ZXTN25020DGTA
ZXTN25020DGTA Documents

NPN -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
ZXTN25020DGTA Overview
In this device, the DC current gain is 300 @ 10mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 290mV @ 700mA, 7A.Keeping the emitter base voltage at 7V allows for a high level of efficiency.215MHz is present in the transition frequency.An input voltage of 20V volts is the breakdown voltage.Maximum collector currents can be below 7A volts.
ZXTN25020DGTA Features
the DC current gain for this device is 300 @ 10mA 2V
the vce saturation(Max) is 290mV @ 700mA, 7A
the emitter base voltage is kept at 7V
a transition frequency of 215MHz
ZXTN25020DGTA Applications
There are a lot of Diodes Incorporated
ZXTN25020DGTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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