ZXTN25020DGTA
- Mfr.Part #
- ZXTN25020DGTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 20V 7A SOT223-3
- Stock
- 52,966
- In Stock :
- 52,966
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- SWITCHING
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Lead Free :
- Lead Free
- Length :
- 6.7mm
- Pin Count :
- 4
- Width :
- 3.7mm
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Base Voltage (VCBO) :
- 100V
- Max Breakdown Voltage :
- 20V
- REACH SVHC :
- No SVHC
- Max Power Dissipation :
- 5.3W
- Case Connection :
- COLLECTOR
- ECCN Code :
- EAR99
- Frequency :
- 215MHz
- Vce Saturation (Max) @ Ib, Ic :
- 290mV @ 700mA, 7A
- Max Collector Current :
- 7A
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 20V
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 4
- Number of Terminations :
- 4
- Published :
- 2008
- Package / Case :
- TO-261-4, TO-261AA
- Factory Lead Time :
- 15 Weeks
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 10mA 2V
- Terminal Finish :
- Matte Tin (Sn)
- Base Part Number :
- ZXTN25020D
- Power - Max :
- 3W
- Terminal Position :
- Dual
- Terminal Form :
- Gull wing
- Power Dissipation :
- 5.3W
- Collector Emitter Breakdown Voltage :
- 20V
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Weight :
- 7.994566mg
- Transition Frequency :
- 215MHz
- Pbfree Code :
- No
- Transistor Type :
- NPN
- Gain Bandwidth Product :
- 215MHz
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- Emitter Base Voltage (VEBO) :
- 7V
- Height :
- 1.65mm
- Datasheets
- ZXTN25020DGTA
ZXTN25020DGTA Documents

NPN -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
ZXTN25020DGTA Overview
In this device, the DC current gain is 300 @ 10mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 290mV @ 700mA, 7A.Keeping the emitter base voltage at 7V allows for a high level of efficiency.215MHz is present in the transition frequency.An input voltage of 20V volts is the breakdown voltage.Maximum collector currents can be below 7A volts.
ZXTN25020DGTA Features
the DC current gain for this device is 300 @ 10mA 2V
the vce saturation(Max) is 290mV @ 700mA, 7A
the emitter base voltage is kept at 7V
a transition frequency of 215MHz
ZXTN25020DGTA Applications
There are a lot of Diodes Incorporated
ZXTN25020DGTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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