ZXTN25020DGTA
- Mfr.Part #
- ZXTN25020DGTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 20V 7A SOT223-3
- Stock
- 52,966
- In Stock :
- 52,966
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Form :
- Gull wing
- Width :
- 3.7mm
- Weight :
- 7.994566mg
- Gain Bandwidth Product :
- 215MHz
- Collector Emitter Voltage (VCEO) :
- 20V
- Number of Pins :
- 4
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 5.3W
- Terminal Position :
- Dual
- Published :
- 2008
- Lead Free :
- Lead Free
- Base Part Number :
- ZXTN25020D
- Length :
- 6.7mm
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-261-4, TO-261AA
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Number of Terminations :
- 4
- Max Breakdown Voltage :
- 20V
- Case Connection :
- COLLECTOR
- Peak Reflow Temperature (Cel) :
- 260
- REACH SVHC :
- No SVHC
- Polarity/Channel Type :
- NPN
- Height :
- 1.65mm
- Operating Temperature :
- -55°C~150°C TJ
- Transition Frequency :
- 215MHz
- Power Dissipation :
- 5.3W
- Frequency :
- 215MHz
- Vce Saturation (Max) @ Ib, Ic :
- 290mV @ 700mA, 7A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 10mA 2V
- Pin Count :
- 4
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Transistor Type :
- NPN
- Power - Max :
- 3W
- JESD-609 Code :
- e3
- Pbfree Code :
- No
- Collector Emitter Breakdown Voltage :
- 20V
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 100V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 7A
- Element Configuration :
- Single
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 15 Weeks
- Emitter Base Voltage (VEBO) :
- 7V
- Terminal Finish :
- Matte Tin (Sn)
- ECCN Code :
- EAR99
- Datasheets
- ZXTN25020DGTA

NPN -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
ZXTN25020DGTA Overview
In this device, the DC current gain is 300 @ 10mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 290mV @ 700mA, 7A.Keeping the emitter base voltage at 7V allows for a high level of efficiency.215MHz is present in the transition frequency.An input voltage of 20V volts is the breakdown voltage.Maximum collector currents can be below 7A volts.
ZXTN25020DGTA Features
the DC current gain for this device is 300 @ 10mA 2V
the vce saturation(Max) is 290mV @ 700mA, 7A
the emitter base voltage is kept at 7V
a transition frequency of 215MHz
ZXTN25020DGTA Applications
There are a lot of Diodes Incorporated
ZXTN25020DGTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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