ZXTN25020DGTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Power Dissipation :

5.3W

Collector Emitter Voltage (VCEO) :

20V

Time@Peak Reflow Temperature-Max (s) :

40

Radiation Hardening :

No

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 10mA 2V

Transistor Element Material :

SILICON

Width :

3.7mm

Max Power Dissipation :

5.3W

Power - Max :

3W

Pin Count :

4

Lead Free :

Lead Free

Terminal Finish :

Matte Tin (Sn)

Emitter Base Voltage (VEBO) :

7V

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce Saturation (Max) @ Ib, Ic :

290mV @ 700mA, 7A

REACH SVHC :

No SVHC

Factory Lead Time :

15 Weeks

Pbfree Code :

No

Max Breakdown Voltage :

20V

Collector Base Voltage (VCBO) :

100V

Polarity/Channel Type :

NPN

Package / Case :

TO-261-4, TO-261AA

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Gain Bandwidth Product :

215MHz

Height :

1.65mm

Terminal Position :

Dual

Current - Collector Cutoff (Max) :

50nA ICBO

Peak Reflow Temperature (Cel) :

260

Base Part Number :

ZXTN25020D

Published :

2008

Number of Terminations :

4

Length :

6.7mm

Packaging :

Tape and Reel (TR)

Collector Emitter Breakdown Voltage :

20V

Weight :

7.994566mg

Max Collector Current :

7A

Transistor Application :

SWITCHING

Frequency :

215MHz

Transistor Type :

NPN

JESD-609 Code :

e3

Case Connection :

COLLECTOR

Number of Pins :

4

Transition Frequency :

215MHz

Element Configuration :

Single

ECCN Code :

EAR99

Terminal Form :

Gull wing

Mount :

Surface Mount