ZXTN25020DFLTA
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- Mfr.Part #
- ZXTN25020DFLTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 20V 2A SOT23-3
- Stock
- 4
- In Stock ：
- 4
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 7V
- Packaging :
- Tape and Reel (TR)
- REACH SVHC :
- No SVHC
- Pbfree Code :
- yes
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 10mA 2V
- Max Power Dissipation :
- 350mW
- Vce Saturation (Max) @ Ib, Ic :
- 270mV @ 450mA, 4.5A
- Pin Count :
- 3
- Collector Emitter Saturation Voltage :
- 270mV
- Terminal Form :
- Gull wing
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Base Part Number :
- ZXTN25020D
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Matte Tin (Sn)
- Number of Terminations :
- 3
- Height :
- 1mm
- Transition Frequency :
- 215MHz
- Published :
- 2006
- Factory Lead Time :
- 15 Weeks
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 20V
- Polarity/Channel Type :
- NPN
- Number of Elements :
- 1
- Gain Bandwidth Product :
- 215MHz
- Current Rating :
- 2A
- Max Collector Current :
- 2A
- Number of Pins :
- 3
- Element Configuration :
- Single
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Weight :
- 7.994566mg
- JESD-609 Code :
- e3
- Terminal Position :
- Dual
- Width :
- 1.4mm
- Collector Emitter Voltage (VCEO) :
- 20V
- Voltage - Rated DC :
- 20V
- Peak Reflow Temperature (Cel) :
- 260
- Collector Base Voltage (VCBO) :
- 100V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Power Dissipation :
- 350mW
- Operating Temperature :
- -55°C~150°C TJ
- Length :
- 3.05mm
- Max Breakdown Voltage :
- 20V
- ECCN Code :
- EAR99
- Frequency :
- 215MHz
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- ZXTN25020DFLTA
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
ZXTN25020DFLTA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 300 @ 10mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 270mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 270mV @ 450mA, 4.5A.The emitter base voltage can be kept at 7V for high efficiency.The current rating of this fuse is 2A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 215MHz.The breakdown input voltage is 20V volts.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.
ZXTN25020DFLTA Features
the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of 270mV
the vce saturation(Max) is 270mV @ 450mA, 4.5A
the emitter base voltage is kept at 7V
the current rating of this device is 2A
a transition frequency of 215MHz
ZXTN25020DFLTA Applications
There are a lot of Diodes Incorporated
ZXTN25020DFLTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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