ZXTN25020DFHTA
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- Mfr.Part #
- ZXTN25020DFHTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 20V 4.5A SOT23-3
- Stock
- 2,735
- In Stock ：
- 2,735
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power - Max :
- 1.25W
- Frequency :
- 215MHz
- Max Collector Current :
- 4.5A
- REACH SVHC :
- No SVHC
- Transition Frequency :
- 215MHz
- Pin Count :
- 3
- Terminal Position :
- Dual
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 265mV @ 90mA, 4.5A
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Voltage - Rated DC :
- 20V
- Factory Lead Time :
- 15 Weeks
- Number of Terminations :
- 3
- Terminal Finish :
- Matte Tin (Sn)
- Max Power Dissipation :
- 1.81W
- Weight :
- 7.994566mg
- JESD-609 Code :
- e3
- Transistor Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 20V
- Turn Off Time-Max (toff) :
- 425ns
- Element Configuration :
- Single
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Radiation Hardening :
- No
- Gain Bandwidth Product :
- 215MHz
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2006
- Number of Pins :
- 3
- Max Breakdown Voltage :
- 20V
- Current Rating :
- 4.5A
- Collector Emitter Voltage (VCEO) :
- 20V
- Base Part Number :
- ZXTN25020D
- Peak Reflow Temperature (Cel) :
- 260
- Lead Free :
- Lead Free
- Power Dissipation :
- 1.81W
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Height :
- 1mm
- Terminal Form :
- Gull wing
- Polarity/Channel Type :
- NPN
- Mount :
- Surface Mount
- Transistor Application :
- SWITCHING
- Width :
- 1.4mm
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 10mA 2V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 7V
- Length :
- 3.05mm
- Collector Base Voltage (VCBO) :
- 100V
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Saturation Voltage :
- 265mV
- Datasheets
- ZXTN25020DFHTA
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
ZXTN25020DFHTA Overview
In this device, the DC current gain is 300 @ 10mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 265mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 265mV @ 90mA, 4.5A.Keeping the emitter base voltage at 7V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (4.5A).215MHz is present in the transition frequency.An input voltage of 20V volts is the breakdown voltage.Maximum collector currents can be below 4.5A volts.
ZXTN25020DFHTA Features
the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of 265mV
the vce saturation(Max) is 265mV @ 90mA, 4.5A
the emitter base voltage is kept at 7V
the current rating of this device is 4.5A
a transition frequency of 215MHz
ZXTN25020DFHTA Applications
There are a lot of Diodes Incorporated
ZXTN25020DFHTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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