ZXTN25012EFLTA
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- Mfr.Part #
- ZXTN25012EFLTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 12V 2A SOT23-3
- Stock
- 14,231
- In Stock ：
- 14,231
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- Dual
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 7V
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Collector Emitter Breakdown Voltage :
- 12V
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Max Collector Current :
- 2A
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Polarity/Channel Type :
- NPN
- Power Dissipation :
- 350mW
- Published :
- 2006
- Transistor Type :
- NPN
- Radiation Hardening :
- No
- Terminal Form :
- Gull wing
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Packaging :
- Tape and Reel (TR)
- Max Breakdown Voltage :
- 12V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 1.02mm
- Weight :
- 7.994566mg
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Transition Frequency :
- 260MHz
- Collector Base Voltage (VCBO) :
- 20V
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Power Dissipation :
- 350mW
- Factory Lead Time :
- 15 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 500 @ 10mA 2V
- Length :
- 3.04mm
- Collector Emitter Saturation Voltage :
- 300mV
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 100mA, 5A
- Collector Emitter Voltage (VCEO) :
- 12V
- Peak Reflow Temperature (Cel) :
- 260
- Frequency :
- 260MHz
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Surface Mount
- Gain Bandwidth Product :
- 260MHz
- Width :
- 1.4mm
- Base Part Number :
- ZXTN25012E
- Datasheets
- ZXTN25012EFLTA
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
ZXTN25012EFLTA Overview
DC current gain in this device equals 500 @ 10mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 300mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 100mA, 5A.An emitter's base voltage can be kept at 7V to gain high efficiency.As a result, the part has a transition frequency of 260MHz.Breakdown input voltage is 12V volts.In extreme cases, the collector current can be as low as 2A volts.
ZXTN25012EFLTA Features
the DC current gain for this device is 500 @ 10mA 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 100mA, 5A
the emitter base voltage is kept at 7V
a transition frequency of 260MHz
ZXTN25012EFLTA Applications
There are a lot of Diodes Incorporated
ZXTN25012EFLTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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