ZXTN25012EFHTA
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- Mfr.Part #
- ZXTN25012EFHTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 12V 6A SOT23-3
- Stock
- 43,571
- In Stock ：
- 43,571
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Transistor Type :
- NPN
- Collector Base Voltage (VCBO) :
- 20V
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 6A
- Max Breakdown Voltage :
- 12V
- Collector Emitter Saturation Voltage :
- 190mV
- Terminal Finish :
- Matte Tin (Sn)
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Terminal Position :
- Dual
- Continuous Collector Current :
- 6A
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Transition Frequency :
- 260MHz
- Emitter Base Voltage (VEBO) :
- 7V
- Width :
- 1.4mm
- Number of Elements :
- 1
- Weight :
- 7.994566mg
- Terminal Form :
- Gull wing
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 12V
- Frequency :
- 260MHz
- Polarity/Channel Type :
- NPN
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~150°C TJ
- Height :
- 1mm
- Max Power Dissipation :
- 1.25W
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Pin Count :
- 3
- Length :
- 3.05mm
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 260MHz
- Base Part Number :
- ZXTN25012E
- hFE Min :
- 500
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 3
- Mount :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 500 @ 10mA 2V
- Published :
- 2006
- Power Dissipation :
- 1.81W
- Factory Lead Time :
- 15 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 190mV @ 120mA, 6A
- Collector Emitter Breakdown Voltage :
- 12V
- Datasheets
- ZXTN25012EFHTA
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
ZXTN25012EFHTA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 500 @ 10mA 2V DC current gain.As it features a collector emitter saturation voltage of 190mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 6A.Keeping the emitter base voltage at 7V can result in a high level of efficiency.There is a transition frequency of 260MHz in the part.Single BJT transistor can be broken down at a voltage of 12V volts.When collector current reaches its maximum, it can reach 6A volts.
ZXTN25012EFHTA Features
the DC current gain for this device is 500 @ 10mA 2V
a collector emitter saturation voltage of 190mV
the vce saturation(Max) is 190mV @ 120mA, 6A
the emitter base voltage is kept at 7V
a transition frequency of 260MHz
ZXTN25012EFHTA Applications
There are a lot of Diodes Incorporated
ZXTN25012EFHTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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