ZXTN25012EFHTA
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- Mfr.Part #
- ZXTN25012EFHTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 12V 6A SOT23-3
- Stock
- 43,571
- In Stock ：
- 43,571
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Pin Count :
- 3
- Number of Elements :
- 1
- hFE Min :
- 500
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Emitter Base Voltage (VEBO) :
- 7V
- Power Dissipation :
- 1.81W
- Max Power Dissipation :
- 1.25W
- Terminal Finish :
- Matte Tin (Sn)
- Collector Base Voltage (VCBO) :
- 20V
- Transition Frequency :
- 260MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 500 @ 10mA 2V
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Weight :
- 7.994566mg
- Frequency :
- 260MHz
- Max Breakdown Voltage :
- 12V
- Length :
- 3.05mm
- Collector Emitter Saturation Voltage :
- 190mV
- Base Part Number :
- ZXTN25012E
- Vce Saturation (Max) @ Ib, Ic :
- 190mV @ 120mA, 6A
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Polarity/Channel Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2006
- Pbfree Code :
- yes
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Voltage (VCEO) :
- 12V
- Continuous Collector Current :
- 6A
- Width :
- 1.4mm
- Radiation Hardening :
- No
- Terminal Position :
- Dual
- Element Configuration :
- Single
- Number of Pins :
- 3
- Transistor Type :
- NPN
- Terminal Form :
- Gull wing
- Peak Reflow Temperature (Cel) :
- 260
- Factory Lead Time :
- 15 Weeks
- Max Collector Current :
- 6A
- Height :
- 1mm
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 12V
- Gain Bandwidth Product :
- 260MHz
- Datasheets
- ZXTN25012EFHTA
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
ZXTN25012EFHTA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 500 @ 10mA 2V DC current gain.As it features a collector emitter saturation voltage of 190mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 6A.Keeping the emitter base voltage at 7V can result in a high level of efficiency.There is a transition frequency of 260MHz in the part.Single BJT transistor can be broken down at a voltage of 12V volts.When collector current reaches its maximum, it can reach 6A volts.
ZXTN25012EFHTA Features
the DC current gain for this device is 500 @ 10mA 2V
a collector emitter saturation voltage of 190mV
the vce saturation(Max) is 190mV @ 120mA, 6A
the emitter base voltage is kept at 7V
a transition frequency of 260MHz
ZXTN25012EFHTA Applications
There are a lot of Diodes Incorporated
ZXTN25012EFHTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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