ZXTN2020FTA
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- Mfr.Part #
- ZXTN2020FTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 100V 4A SOT23-3
- Stock
- 3,111
- In Stock ：
- 3,111
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Power Dissipation :
- 1.56W
- Pin Count :
- 3
- Mounting Type :
- Surface Mount
- Current Rating :
- 4A
- Voltage - Rated DC :
- 100V
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- 7V
- Number of Elements :
- 1
- hFE Min :
- 100
- Packaging :
- Tape and Reel (TR)
- Collector Base Voltage (VCBO) :
- 160V
- Peak Reflow Temperature (Cel) :
- 260
- Factory Lead Time :
- 15 Weeks
- Polarity/Channel Type :
- NPN
- Termination :
- SMD/SMT
- Power Dissipation :
- 1.56W
- Base Part Number :
- ZXTN2020
- Length :
- 3.05mm
- Transistor Element Material :
- SILICON
- Contact Plating :
- Tin
- Power - Max :
- 1.2W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 100V
- Width :
- 1.4mm
- Vce Saturation (Max) @ Ib, Ic :
- 150mV @ 400mA, 4A
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Weight :
- 7.994566mg
- Operating Temperature :
- -55°C~150°C TJ
- ECCN Code :
- EAR99
- Max Collector Current :
- 4A
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 2V
- Terminal Position :
- Dual
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- Max Breakdown Voltage :
- 100V
- Terminal Form :
- Gull wing
- Collector Emitter Voltage (VCEO) :
- 100V
- Frequency :
- 130MHz
- Height :
- 1mm
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Published :
- 2006
- Collector Emitter Saturation Voltage :
- 150mV
- Transition Frequency :
- 130MHz
- Transistor Application :
- SWITCHING
- Mount :
- Surface Mount
- REACH SVHC :
- No SVHC
- Number of Pins :
- 3
- Gain Bandwidth Product :
- 130MHz
- Datasheets
- ZXTN2020FTA
NPN -55°C~150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
ZXTN2020FTA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 1A 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 150mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 150mV @ 400mA, 4A.The emitter base voltage can be kept at 7V for high efficiency.The current rating of this fuse is 4A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 130MHz.The breakdown input voltage is 100V volts.Single BJT transistor is possible to have a collector current as low as 4A volts at Single BJT transistors maximum.
ZXTN2020FTA Features
the DC current gain for this device is 100 @ 1A 2V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 150mV @ 400mA, 4A
the emitter base voltage is kept at 7V
the current rating of this device is 4A
a transition frequency of 130MHz
ZXTN2020FTA Applications
There are a lot of Diodes Incorporated
ZXTN2020FTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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