ZXTN2018FTA
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- Mfr.Part #
- ZXTN2018FTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 5A SOT23-3
- Stock
- 6,061
- In Stock ：
- 6,061
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power - Max :
- 1.2W
- Collector Emitter Saturation Voltage :
- 45mV
- Vce Saturation (Max) @ Ib, Ic :
- 210mV @ 300mA, 6A
- Operating Temperature :
- -55°C~150°C TJ
- Max Breakdown Voltage :
- 60V
- Polarity/Channel Type :
- NPN
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Terminal Finish :
- Matte Tin (Sn)
- Continuous Collector Current :
- 5A
- Number of Terminations :
- 3
- Transition Frequency :
- 130MHz
- Number of Elements :
- 1
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 60V
- Factory Lead Time :
- 15 Weeks
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 1.56W
- JESD-609 Code :
- e3
- Width :
- 1.4mm
- Collector Base Voltage (VCBO) :
- 140V
- Length :
- 3.05mm
- Height :
- 1mm
- Pbfree Code :
- yes
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Published :
- 2006
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Emitter Base Voltage (VEBO) :
- 7V
- Weight :
- 7.994566mg
- Max Collector Current :
- 5A
- Radiation Hardening :
- No
- Frequency :
- 130MHz
- Transistor Type :
- NPN
- Gain Bandwidth Product :
- 130MHz
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Form :
- Gull wing
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- 60V
- Packaging :
- Tape and Reel (TR)
- Current Rating :
- 5A
- Terminal Position :
- Dual
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 1V
- Base Part Number :
- ZXTN2018
- Collector Emitter Breakdown Voltage :
- 60V
- Power Dissipation :
- 1.56W
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Datasheets
- ZXTN2018FTA
NPN -55°C~150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
ZXTN2018FTA Overview
In this device, the DC current gain is 100 @ 2A 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 45mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 210mV @ 300mA, 6A.A 5A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 7V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 5A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 130MHz.Input voltage breakdown is available at 60V volts.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.
ZXTN2018FTA Features
the DC current gain for this device is 100 @ 2A 1V
a collector emitter saturation voltage of 45mV
the vce saturation(Max) is 210mV @ 300mA, 6A
the emitter base voltage is kept at 7V
the current rating of this device is 5A
a transition frequency of 130MHz
ZXTN2018FTA Applications
There are a lot of Diodes Incorporated
ZXTN2018FTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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