ZXTN2018FTA
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- Mfr.Part #
- ZXTN2018FTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 5A SOT23-3
- Stock
- 6,061
- In Stock ：
- 6,061
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- 45mV
- Factory Lead Time :
- 15 Weeks
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- Matte Tin (Sn)
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- NPN
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 60V
- Power Dissipation :
- 1.56W
- Collector Emitter Breakdown Voltage :
- 60V
- Published :
- 2006
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Mount :
- Surface Mount
- Width :
- 1.4mm
- Current Rating :
- 5A
- Transistor Application :
- SWITCHING
- Voltage - Rated DC :
- 60V
- Lead Free :
- Lead Free
- Power - Max :
- 1.2W
- Frequency :
- 130MHz
- Emitter Base Voltage (VEBO) :
- 7V
- Radiation Hardening :
- No
- Gain Bandwidth Product :
- 130MHz
- Base Part Number :
- ZXTN2018
- Continuous Collector Current :
- 5A
- Element Configuration :
- Single
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Length :
- 3.05mm
- Terminal Position :
- Dual
- Transistor Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- 40
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Max Power Dissipation :
- 1.56W
- Transition Frequency :
- 130MHz
- Height :
- 1mm
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Max Breakdown Voltage :
- 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 1V
- Weight :
- 7.994566mg
- Pin Count :
- 3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 210mV @ 300mA, 6A
- Max Collector Current :
- 5A
- REACH SVHC :
- No SVHC
- Collector Base Voltage (VCBO) :
- 140V
- Number of Pins :
- 3
- Datasheets
- ZXTN2018FTA
NPN -55°C~150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
ZXTN2018FTA Overview
In this device, the DC current gain is 100 @ 2A 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 45mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 210mV @ 300mA, 6A.A 5A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 7V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 5A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 130MHz.Input voltage breakdown is available at 60V volts.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.
ZXTN2018FTA Features
the DC current gain for this device is 100 @ 2A 1V
a collector emitter saturation voltage of 45mV
the vce saturation(Max) is 210mV @ 300mA, 6A
the emitter base voltage is kept at 7V
the current rating of this device is 5A
a transition frequency of 130MHz
ZXTN2018FTA Applications
There are a lot of Diodes Incorporated
ZXTN2018FTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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