ZXTN2010GTA
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- Mfr.Part #
- ZXTN2010GTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 60V 6A SOT223-3
- Stock
- 29,477
- In Stock ：
- 29,477
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 1.6W
- Published :
- 2006
- Number of Terminations :
- 4
- Number of Pins :
- 4
- Terminal Position :
- Dual
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 1V
- Package / Case :
- TO-261-4, TO-261AA
- Height :
- 1.8mm
- Collector Emitter Saturation Voltage :
- 210mV
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 60V
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 150V
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Base Part Number :
- ZXTN2010
- Max Power Dissipation :
- 3W
- Terminal Finish :
- Matte Tin (Sn)
- Length :
- 6.7mm
- Case Connection :
- COLLECTOR
- Polarity/Channel Type :
- NPN
- Continuous Collector Current :
- 6A
- Mount :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 260mV @ 300mA, 6A
- Pbfree Code :
- No
- Pin Count :
- 4
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Operating Temperature :
- -55°C~150°C TJ
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Max Breakdown Voltage :
- 60V
- hFE Min :
- 20
- Weight :
- 7.994566mg
- Current Rating :
- 6A
- Emitter Base Voltage (VEBO) :
- 7V
- Mounting Type :
- Surface Mount
- Max Junction Temperature (Tj) :
- 150°C
- Element Configuration :
- Single
- Transition Frequency :
- 130MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Width :
- 3.7mm
- Gain Bandwidth Product :
- 130MHz
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Frequency :
- 130MHz
- Factory Lead Time :
- 15 Weeks
- Terminal Form :
- Gull wing
- Peak Reflow Temperature (Cel) :
- 260
- Voltage - Rated DC :
- 60V
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Max Collector Current :
- 6A
- Collector Emitter Breakdown Voltage :
- 190V
- Datasheets
- ZXTN2010GTA
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
ZXTN2010GTA Overview
DC current gain in this device equals 100 @ 2A 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 210mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 260mV @ 300mA, 6A.Single BJT transistor is essential to maintain the continuous collector voltage at 6A to achieve high efficiency.An emitter's base voltage can be kept at 7V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 6A current rating.As a result, the part has a transition frequency of 130MHz.Breakdown input voltage is 60V volts.In extreme cases, the collector current can be as low as 6A volts.
ZXTN2010GTA Features
the DC current gain for this device is 100 @ 2A 1V
a collector emitter saturation voltage of 210mV
the vce saturation(Max) is 260mV @ 300mA, 6A
the emitter base voltage is kept at 7V
the current rating of this device is 6A
a transition frequency of 130MHz
ZXTN2010GTA Applications
There are a lot of Diodes Incorporated
ZXTN2010GTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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