ZXTN2010GTA
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- Mfr.Part #
- ZXTN2010GTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 60V 6A SOT223-3
- Stock
- 29,477
- In Stock ：
- 29,477
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Length :
- 6.7mm
- Transistor Type :
- NPN
- Lead Free :
- Lead Free
- Terminal Form :
- Gull wing
- Max Breakdown Voltage :
- 60V
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 260mV @ 300mA, 6A
- Collector Emitter Saturation Voltage :
- 210mV
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pin Count :
- 4
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 1V
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 15 Weeks
- Pbfree Code :
- No
- Package / Case :
- TO-261-4, TO-261AA
- Published :
- 2006
- Width :
- 3.7mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 7.994566mg
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Continuous Collector Current :
- 6A
- hFE Min :
- 20
- Base Part Number :
- ZXTN2010
- Terminal Finish :
- Matte Tin (Sn)
- Polarity/Channel Type :
- NPN
- Frequency :
- 130MHz
- Current Rating :
- 6A
- Gain Bandwidth Product :
- 130MHz
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Dual
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 3W
- ECCN Code :
- EAR99
- Max Collector Current :
- 6A
- Number of Pins :
- 4
- Collector Emitter Voltage (VCEO) :
- 60V
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- Peak Reflow Temperature (Cel) :
- 260
- Max Junction Temperature (Tj) :
- 150°C
- Power Dissipation :
- 1.6W
- Radiation Hardening :
- No
- REACH SVHC :
- No SVHC
- Collector Emitter Breakdown Voltage :
- 190V
- Emitter Base Voltage (VEBO) :
- 7V
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Transition Frequency :
- 130MHz
- Voltage - Rated DC :
- 60V
- Mounting Type :
- Surface Mount
- Case Connection :
- COLLECTOR
- Collector Base Voltage (VCBO) :
- 150V
- Number of Terminations :
- 4
- Height :
- 1.8mm
- Mount :
- Surface Mount
- Datasheets
- ZXTN2010GTA
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
ZXTN2010GTA Overview
DC current gain in this device equals 100 @ 2A 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 210mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 260mV @ 300mA, 6A.Single BJT transistor is essential to maintain the continuous collector voltage at 6A to achieve high efficiency.An emitter's base voltage can be kept at 7V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 6A current rating.As a result, the part has a transition frequency of 130MHz.Breakdown input voltage is 60V volts.In extreme cases, the collector current can be as low as 6A volts.
ZXTN2010GTA Features
the DC current gain for this device is 100 @ 2A 1V
a collector emitter saturation voltage of 210mV
the vce saturation(Max) is 260mV @ 300mA, 6A
the emitter base voltage is kept at 7V
the current rating of this device is 6A
a transition frequency of 130MHz
ZXTN2010GTA Applications
There are a lot of Diodes Incorporated
ZXTN2010GTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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