ZXTN2010GTA
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- Mfr.Part #
- ZXTN2010GTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 60V 6A SOT223-3
- Stock
- 29,477
- In Stock ：
- 29,477
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 190V
- Width :
- 3.7mm
- Height :
- 1.8mm
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Elements :
- 1
- Transition Frequency :
- 130MHz
- Max Power Dissipation :
- 3W
- Current Rating :
- 6A
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Max Breakdown Voltage :
- 60V
- Max Collector Current :
- 6A
- Base Part Number :
- ZXTN2010
- ECCN Code :
- EAR99
- Power Dissipation :
- 1.6W
- Collector Emitter Saturation Voltage :
- 210mV
- Vce Saturation (Max) @ Ib, Ic :
- 260mV @ 300mA, 6A
- Terminal Form :
- Gull wing
- Packaging :
- Tape and Reel (TR)
- Max Junction Temperature (Tj) :
- 150°C
- Case Connection :
- COLLECTOR
- Terminal Finish :
- Matte Tin (Sn)
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 150V
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- Polarity/Channel Type :
- NPN
- Number of Pins :
- 4
- Operating Temperature :
- -55°C~150°C TJ
- Frequency :
- 130MHz
- Factory Lead Time :
- 15 Weeks
- Mount :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 7V
- JESD-609 Code :
- e3
- Pbfree Code :
- No
- REACH SVHC :
- No SVHC
- Weight :
- 7.994566mg
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Peak Reflow Temperature (Cel) :
- 260
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 1V
- Collector Emitter Voltage (VCEO) :
- 60V
- Gain Bandwidth Product :
- 130MHz
- Transistor Type :
- NPN
- Package / Case :
- TO-261-4, TO-261AA
- hFE Min :
- 20
- Terminal Position :
- Dual
- Number of Terminations :
- 4
- Lead Free :
- Lead Free
- Length :
- 6.7mm
- Published :
- 2006
- Continuous Collector Current :
- 6A
- Voltage - Rated DC :
- 60V
- Pin Count :
- 4
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- ZXTN2010GTA
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
ZXTN2010GTA Overview
DC current gain in this device equals 100 @ 2A 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 210mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 260mV @ 300mA, 6A.Single BJT transistor is essential to maintain the continuous collector voltage at 6A to achieve high efficiency.An emitter's base voltage can be kept at 7V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 6A current rating.As a result, the part has a transition frequency of 130MHz.Breakdown input voltage is 60V volts.In extreme cases, the collector current can be as low as 6A volts.
ZXTN2010GTA Features
the DC current gain for this device is 100 @ 2A 1V
a collector emitter saturation voltage of 210mV
the vce saturation(Max) is 260mV @ 300mA, 6A
the emitter base voltage is kept at 7V
the current rating of this device is 6A
a transition frequency of 130MHz
ZXTN2010GTA Applications
There are a lot of Diodes Incorporated
ZXTN2010GTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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