ZXTN2007GTA

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Mfr.Part #
ZXTN2007GTA
Manufacturer
Diodes Incorporated
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
TRANS NPN 30V 7A SOT223-3
Stock
818
In Stock :
818

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
Terminal Position :
Dual
JESD-609 Code :
e3
Width :
3.7mm
Gain Bandwidth Product :
140MHz
Voltage - Rated DC :
30V
Factory Lead Time :
15 Weeks
Max Breakdown Voltage :
30V
Number of Terminations :
4
Transistor Type :
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 1A 1V
Time@Peak Reflow Temperature-Max (s) :
40
Collector Emitter Breakdown Voltage :
30V
Element Configuration :
Single
Current - Collector Cutoff (Max) :
50nA ICBO
Published :
2006
Continuous Collector Current :
7A
Contact Plating :
Tin
Polarity/Channel Type :
NPN
Vce Saturation (Max) @ Ib, Ic :
220mV @ 300mA, 6.5A
Base Part Number :
ZXTN2007
Transistor Element Material :
SILICON
Pbfree Code :
No
Max Collector Current :
7A
Transistor Application :
SWITCHING
Peak Reflow Temperature (Cel) :
260
Mount :
Surface Mount
Number of Pins :
4
Mounting Type :
Surface Mount
Power Dissipation :
3W
Transition Frequency :
140MHz
Terminal Form :
Gull wing
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Radiation Hardening :
No
Operating Temperature :
-55°C~150°C TJ
ECCN Code :
EAR99
Number of Elements :
1
Lead Free :
Lead Free
Max Power Dissipation :
3W
Height :
1.65mm
Collector Base Voltage (VCBO) :
80V
Case Connection :
COLLECTOR
Packaging :
Tape and Reel (TR)
RoHS Status :
ROHS3 Compliant
Length :
6.7mm
Current Rating :
7A
Emitter Base Voltage (VEBO) :
7V
Package / Case :
TO-261-4, TO-261AA
Frequency :
140MHz
Pin Count :
4
Weight :
7.994566mg
Collector Emitter Voltage (VCEO) :
30V
Datasheets
ZXTN2007GTA
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated ZXTN2007GTA from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:4, Base Part Number:ZXTN2007, Number of Pins:4, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-261-4, TO-261AA, ZXTN2007GTA pinout, ZXTN2007GTA datasheet PDF, ZXTN2007GTA amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated ZXTN2007GTA ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated ZXTN2007GTA


NPN -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount

ZXTN2007GTA Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 1A 1V.When VCE saturation is 220mV @ 300mA, 6.5A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 7A for high efficiency.Emitter base voltages of 7V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 7A.In the part, the transition frequency is 140MHz.This device can take an input voltage of 30V volts before it breaks down.A maximum collector current of 7A volts can be achieved.

ZXTN2007GTA Features


the DC current gain for this device is 100 @ 1A 1V
the vce saturation(Max) is 220mV @ 300mA, 6.5A
the emitter base voltage is kept at 7V
the current rating of this device is 7A
a transition frequency of 140MHz


ZXTN2007GTA Applications


There are a lot of Diodes Incorporated
ZXTN2007GTA applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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