ZXTN19100CGTA
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- Mfr.Part #
- ZXTN19100CGTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 100V 5.5A SOT223-3
- Stock
- 18,020
- In Stock ：
- 18,020
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 5.3W
- Collector Emitter Saturation Voltage :
- 430mV
- Emitter Base Voltage (VEBO) :
- 7V
- Max Collector Current :
- 5.5A
- Transistor Application :
- SWITCHING
- Transition Frequency :
- 150MHz
- Collector Emitter Breakdown Voltage :
- 100V
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Peak Reflow Temperature (Cel) :
- 260
- Mount :
- Surface Mount
- JESD-609 Code :
- e3
- Height :
- 1.65mm
- Pin Count :
- 4
- Number of Terminations :
- 4
- Terminal Finish :
- Matte Tin (Sn)
- Published :
- 2007
- Power Dissipation :
- 5.3W
- Base Part Number :
- ZXTN19100C
- Factory Lead Time :
- 15 Weeks
- Gain Bandwidth Product :
- 150MHz
- Number of Elements :
- 1
- Weight :
- 7.994566mg
- Collector Emitter Voltage (VCEO) :
- 100V
- Transistor Element Material :
- SILICON
- Frequency :
- 150MHz
- Transistor Type :
- NPN
- Package / Case :
- TO-261-4, TO-261AA
- REACH SVHC :
- No SVHC
- Element Configuration :
- Single
- Number of Pins :
- 4
- Vce Saturation (Max) @ Ib, Ic :
- 430mV @ 550mA, 5.5A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Width :
- 3.7mm
- Packaging :
- Tape and Reel (TR)
- Collector Base Voltage (VCBO) :
- 200V
- RoHS Status :
- ROHS3 Compliant
- Max Breakdown Voltage :
- 100V
- Power - Max :
- 3W
- Operating Temperature :
- -55°C~150°C TJ
- Polarity/Channel Type :
- NPN
- Terminal Position :
- Dual
- Length :
- 6.7mm
- Terminal Form :
- Gull wing
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Case Connection :
- COLLECTOR
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 2V
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- No
- Mounting Type :
- Surface Mount
- Datasheets
- ZXTN19100CGTA
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
ZXTN19100CGTA Overview
In this device, the DC current gain is 200 @ 100mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 430mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 430mV @ 550mA, 5.5A.With the emitter base voltage set at 7V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 5.5A volts at Single BJT transistors maximum.
ZXTN19100CGTA Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of 430mV
the vce saturation(Max) is 430mV @ 550mA, 5.5A
the emitter base voltage is kept at 7V
a transition frequency of 150MHz
ZXTN19100CGTA Applications
There are a lot of Diodes Incorporated
ZXTN19100CGTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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