ZXTN19100CGTA
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- Mfr.Part #
- ZXTN19100CGTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 100V 5.5A SOT223-3
- Stock
- 18,020
- In Stock ：
- 18,020
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Frequency :
- 150MHz
- Collector Emitter Breakdown Voltage :
- 100V
- Max Collector Current :
- 5.5A
- Collector Base Voltage (VCBO) :
- 200V
- REACH SVHC :
- No SVHC
- Number of Terminations :
- 4
- Max Power Dissipation :
- 5.3W
- Transition Frequency :
- 150MHz
- Lead Free :
- Lead Free
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- COLLECTOR
- Mount :
- Surface Mount
- Width :
- 3.7mm
- Terminal Position :
- Dual
- Base Part Number :
- ZXTN19100C
- Collector Emitter Voltage (VCEO) :
- 100V
- Number of Elements :
- 1
- Max Breakdown Voltage :
- 100V
- Pin Count :
- 4
- Power Dissipation :
- 5.3W
- Package / Case :
- TO-261-4, TO-261AA
- Length :
- 6.7mm
- Published :
- 2007
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- 260
- Power - Max :
- 3W
- Weight :
- 7.994566mg
- Collector Emitter Saturation Voltage :
- 430mV
- Terminal Finish :
- Matte Tin (Sn)
- Vce Saturation (Max) @ Ib, Ic :
- 430mV @ 550mA, 5.5A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 2V
- Factory Lead Time :
- 15 Weeks
- Element Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- Polarity/Channel Type :
- NPN
- Pbfree Code :
- No
- Number of Pins :
- 4
- Radiation Hardening :
- No
- Terminal Form :
- Gull wing
- Transistor Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 7V
- Height :
- 1.65mm
- Operating Temperature :
- -55°C~150°C TJ
- Gain Bandwidth Product :
- 150MHz
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- ZXTN19100CGTA
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
ZXTN19100CGTA Overview
In this device, the DC current gain is 200 @ 100mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 430mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 430mV @ 550mA, 5.5A.With the emitter base voltage set at 7V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 5.5A volts at Single BJT transistors maximum.
ZXTN19100CGTA Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of 430mV
the vce saturation(Max) is 430mV @ 550mA, 5.5A
the emitter base voltage is kept at 7V
a transition frequency of 150MHz
ZXTN19100CGTA Applications
There are a lot of Diodes Incorporated
ZXTN19100CGTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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