ZXTN19100CGTA
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- Mfr.Part #
- ZXTN19100CGTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 100V 5.5A SOT223-3
- Stock
- 18,020
- In Stock ：
- 18,020
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Case Connection :
- COLLECTOR
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Height :
- 1.65mm
- Packaging :
- Tape and Reel (TR)
- Collector Base Voltage (VCBO) :
- 200V
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-261-4, TO-261AA
- Terminal Form :
- Gull wing
- Frequency :
- 150MHz
- Pbfree Code :
- No
- Polarity/Channel Type :
- NPN
- Power - Max :
- 3W
- JESD-609 Code :
- e3
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 2V
- Max Collector Current :
- 5.5A
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Terminal Finish :
- Matte Tin (Sn)
- Pin Count :
- 4
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Terminations :
- 4
- Collector Emitter Breakdown Voltage :
- 100V
- Max Power Dissipation :
- 5.3W
- Weight :
- 7.994566mg
- Number of Pins :
- 4
- Power Dissipation :
- 5.3W
- Width :
- 3.7mm
- Mount :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 7V
- Terminal Position :
- Dual
- Length :
- 6.7mm
- Transistor Element Material :
- SILICON
- Published :
- 2007
- Base Part Number :
- ZXTN19100C
- Transition Frequency :
- 150MHz
- Peak Reflow Temperature (Cel) :
- 260
- Vce Saturation (Max) @ Ib, Ic :
- 430mV @ 550mA, 5.5A
- Number of Elements :
- 1
- Gain Bandwidth Product :
- 150MHz
- Max Breakdown Voltage :
- 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 15 Weeks
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 100V
- Collector Emitter Saturation Voltage :
- 430mV
- Datasheets
- ZXTN19100CGTA
ZXTN19100CGTA Documents
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
ZXTN19100CGTA Overview
In this device, the DC current gain is 200 @ 100mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 430mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 430mV @ 550mA, 5.5A.With the emitter base voltage set at 7V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 5.5A volts at Single BJT transistors maximum.
ZXTN19100CGTA Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of 430mV
the vce saturation(Max) is 430mV @ 550mA, 5.5A
the emitter base voltage is kept at 7V
a transition frequency of 150MHz
ZXTN19100CGTA Applications
There are a lot of Diodes Incorporated
ZXTN19100CGTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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