ZXTN19100CGTA
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- Mfr.Part #
- ZXTN19100CGTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 100V 5.5A SOT223-3
- Stock
- 18,020
- In Stock ：
- 18,020
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- NPN
- Pin Count :
- 4
- Peak Reflow Temperature (Cel) :
- 260
- Base Part Number :
- ZXTN19100C
- Power Dissipation :
- 5.3W
- Mount :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 2V
- Number of Pins :
- 4
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- Weight :
- 7.994566mg
- Emitter Base Voltage (VEBO) :
- 7V
- Terminal Form :
- Gull wing
- Vce Saturation (Max) @ Ib, Ic :
- 430mV @ 550mA, 5.5A
- Length :
- 6.7mm
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 100V
- Power - Max :
- 3W
- Lead Free :
- Lead Free
- Max Collector Current :
- 5.5A
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Pbfree Code :
- No
- Collector Emitter Saturation Voltage :
- 430mV
- Published :
- 2007
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Transition Frequency :
- 150MHz
- Transistor Application :
- SWITCHING
- Transistor Type :
- NPN
- Collector Base Voltage (VCBO) :
- 200V
- Max Power Dissipation :
- 5.3W
- Number of Terminations :
- 4
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Matte Tin (Sn)
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Width :
- 3.7mm
- REACH SVHC :
- No SVHC
- Frequency :
- 150MHz
- Terminal Position :
- Dual
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Voltage (VCEO) :
- 100V
- Case Connection :
- COLLECTOR
- Gain Bandwidth Product :
- 150MHz
- Max Breakdown Voltage :
- 100V
- Factory Lead Time :
- 15 Weeks
- Height :
- 1.65mm
- Package / Case :
- TO-261-4, TO-261AA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Datasheets
- ZXTN19100CGTA
ZXTN19100CGTA Documents
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
ZXTN19100CGTA Overview
In this device, the DC current gain is 200 @ 100mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 430mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 430mV @ 550mA, 5.5A.With the emitter base voltage set at 7V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 5.5A volts at Single BJT transistors maximum.
ZXTN19100CGTA Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of 430mV
the vce saturation(Max) is 430mV @ 550mA, 5.5A
the emitter base voltage is kept at 7V
a transition frequency of 150MHz
ZXTN19100CGTA Applications
There are a lot of Diodes Incorporated
ZXTN19100CGTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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