ZXTN19100CGTA
- Mfr.Part #
- ZXTN19100CGTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 100V 5.5A SOT223-3
- Stock
- 18,020
- In Stock :
- 18,020
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 150MHz
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Gull wing
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Polarity/Channel Type :
- NPN
- Height :
- 1.65mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 2V
- Peak Reflow Temperature (Cel) :
- 260
- REACH SVHC :
- No SVHC
- Mounting Type :
- Surface Mount
- Published :
- 2007
- Emitter Base Voltage (VEBO) :
- 7V
- Vce Saturation (Max) @ Ib, Ic :
- 430mV @ 550mA, 5.5A
- Width :
- 3.7mm
- Length :
- 6.7mm
- Terminal Finish :
- Matte Tin (Sn)
- Pin Count :
- 4
- Case Connection :
- COLLECTOR
- Element Configuration :
- Single
- Power Dissipation :
- 5.3W
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Breakdown Voltage :
- 100V
- Transistor Application :
- SWITCHING
- Mount :
- Surface Mount
- Pbfree Code :
- No
- Number of Terminations :
- 4
- ECCN Code :
- EAR99
- Factory Lead Time :
- 15 Weeks
- Transistor Type :
- NPN
- Frequency :
- 150MHz
- Power - Max :
- 3W
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Package / Case :
- TO-261-4, TO-261AA
- Collector Base Voltage (VCBO) :
- 200V
- Transistor Element Material :
- SILICON
- Weight :
- 7.994566mg
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Breakdown Voltage :
- 100V
- Base Part Number :
- ZXTN19100C
- Max Collector Current :
- 5.5A
- Collector Emitter Voltage (VCEO) :
- 100V
- Number of Pins :
- 4
- Max Power Dissipation :
- 5.3W
- Gain Bandwidth Product :
- 150MHz
- Collector Emitter Saturation Voltage :
- 430mV
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Dual
- Datasheets
- ZXTN19100CGTA

NPN -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
ZXTN19100CGTA Overview
In this device, the DC current gain is 200 @ 100mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 430mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 430mV @ 550mA, 5.5A.With the emitter base voltage set at 7V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 5.5A volts at Single BJT transistors maximum.
ZXTN19100CGTA Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of 430mV
the vce saturation(Max) is 430mV @ 550mA, 5.5A
the emitter base voltage is kept at 7V
a transition frequency of 150MHz
ZXTN19100CGTA Applications
There are a lot of Diodes Incorporated
ZXTN19100CGTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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