ZXTN19100CGTA
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- Mfr.Part #
- ZXTN19100CGTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 100V 5.5A SOT223-3
- Stock
- 18,020
- In Stock ：
- 18,020
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 4
- Collector Base Voltage (VCBO) :
- 200V
- Max Collector Current :
- 5.5A
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Collector Emitter Breakdown Voltage :
- 100V
- Terminal Form :
- Gull wing
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Lead Free
- REACH SVHC :
- No SVHC
- Polarity/Channel Type :
- NPN
- Base Part Number :
- ZXTN19100C
- Number of Pins :
- 4
- Mounting Type :
- Surface Mount
- Max Breakdown Voltage :
- 100V
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 15 Weeks
- Weight :
- 7.994566mg
- Power - Max :
- 3W
- Terminal Position :
- Dual
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- Height :
- 1.65mm
- Collector Emitter Saturation Voltage :
- 430mV
- Collector Emitter Voltage (VCEO) :
- 100V
- Power Dissipation :
- 5.3W
- Terminal Finish :
- Matte Tin (Sn)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 5.3W
- Element Configuration :
- Single
- Frequency :
- 150MHz
- Transition Frequency :
- 150MHz
- Length :
- 6.7mm
- Transistor Type :
- NPN
- Package / Case :
- TO-261-4, TO-261AA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 2V
- Pbfree Code :
- No
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 7V
- Width :
- 3.7mm
- Gain Bandwidth Product :
- 150MHz
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- COLLECTOR
- Published :
- 2007
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 4
- Vce Saturation (Max) @ Ib, Ic :
- 430mV @ 550mA, 5.5A
- Mount :
- Surface Mount
- Datasheets
- ZXTN19100CGTA
ZXTN19100CGTA Documents
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
ZXTN19100CGTA Overview
In this device, the DC current gain is 200 @ 100mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 430mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 430mV @ 550mA, 5.5A.With the emitter base voltage set at 7V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 5.5A volts at Single BJT transistors maximum.
ZXTN19100CGTA Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of 430mV
the vce saturation(Max) is 430mV @ 550mA, 5.5A
the emitter base voltage is kept at 7V
a transition frequency of 150MHz
ZXTN19100CGTA Applications
There are a lot of Diodes Incorporated
ZXTN19100CGTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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