ZXMN6A25DN8TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Pin Count :

8

Turn-Off Delay Time :

26.2 ns

Mounting Type :

Surface Mount

Number of Terminations :

8

Turn On Delay Time :

3.8 ns

Published :

2006

Number of Channels :

2

FET Feature :

Logic Level Gate

Rds On (Max) @ Id, Vgs :

50m Ω @ 3.6A, 10V

Lead Free :

Lead Free

Drain Current-Max (Abs) (ID) :

3.6A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Resistance :

500MOhm

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

3.8A

Width :

4mm

Gate Charge (Qg) (Max) @ Vgs :

20.4nC @ 10V

Factory Lead Time :

17 Weeks

Current Rating :

4.7A

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Application :

SWITCHING

Power Dissipation :

2.1W

RoHS Status :

ROHS3 Compliant

Voltage - Rated DC :

60V

Max Power Dissipation :

2.1W

FET Type :

2 N-Channel (Dual)

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

60V

Weight :

73.992255mg

Packaging :

Cut Tape (CT)

Terminal Form :

Gull wing

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

1V @ 250μA (Min)

Pbfree Code :

yes

Mount :

Surface Mount

Rise Time :

4ns

Number of Elements :

2

Peak Reflow Temperature (Cel) :

260

Length :

5mm

Input Capacitance (Ciss) (Max) @ Vds :

1063pF @ 30V

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

10.6 ns

Height :

1.5mm

Radiation Hardening :

No

Power - Max :

1.8W

ECCN Code :

EAR99

Continuous Drain Current (ID) :

5A

Number of Pins :

8

Terminal Finish :

Matte Tin (Sn)