ZXMN6A11DN8TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Type :

2 N-Channel (Dual)

Time@Peak Reflow Temperature-Max (s) :

40

Gate to Source Voltage (Vgs) :

20V

Terminal Form :

Gull wing

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Length :

5mm

Continuous Drain Current (ID) :

3.2A

Max Power Dissipation :

2.1W

Current - Continuous Drain (Id) @ 25°C :

2.5A

Fall Time (Typ) :

4.6 ns

Drain to Source Breakdown Voltage :

60V

Resistance :

120mOhm

Number of Channels :

2

Rds On (Max) @ Id, Vgs :

120m Ω @ 2.5A, 10V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Factory Lead Time :

17 Weeks

Width :

4mm

Voltage - Rated DC :

60V

Current Rating :

2.7A

Rise Time :

3.5ns

Threshold Voltage :

1V

Input Capacitance (Ciss) (Max) @ Vds :

330pF @ 40V

Terminal Finish :

Matte Tin (Sn)

Packaging :

Tape and Reel (TR)

Pin Count :

8

Transistor Element Material :

SILICON

FET Feature :

Logic Level Gate

Power Dissipation :

2.1W

Number of Elements :

2

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

8

Turn On Delay Time :

1.95 ns

Published :

2006

Gate Charge (Qg) (Max) @ Vgs :

5.7nC @ 10V

JESD-609 Code :

e3

Pbfree Code :

yes

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

1V @ 250μA (Min)

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

8.2 ns

Number of Pins :

8

Height :

1.5mm

Weight :

73.992255mg

REACH SVHC :

No SVHC

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature :

-55°C~150°C TJ

Power - Max :

1.8W