ZXMN3G32DN8TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Width :

4mm

Rise Time :

3.1ns

Radiation Hardening :

No

Turn-Off Delay Time :

14 ns

Power - Max :

1.8W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminations :

8

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

5.5A

Weight :

73.992255mg

Published :

2008

FET Feature :

Logic Level Gate

Mounting Type :

Surface Mount

Mount :

Surface Mount

Resistance :

45mOhm

Package / Case :

8-SOIC (0.154, 3.90mm Width)

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Element Configuration :

Dual

Drain Current-Max (Abs) (ID) :

5.5A

Rds On (Max) @ Id, Vgs :

28m Ω @ 6A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Dual Supply Voltage :

30V

Input Capacitance (Ciss) (Max) @ Vds :

472pF @ 15V

Power Dissipation :

2.1W

Terminal Finish :

Matte Tin (Sn)

Pbfree Code :

yes

Length :

5mm

Operating Mode :

ENHANCEMENT MODE

Height :

1.5mm

Max Power Dissipation :

2.1W

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

40

Fall Time (Typ) :

9.7 ns

Threshold Voltage :

3V

Gate Charge (Qg) (Max) @ Vgs :

10.5nC @ 10V

Lead Free :

Lead Free

Pin Count :

8

Nominal Vgs :

3 V

Number of Elements :

2

Number of Channels :

2

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

17 Weeks

Continuous Drain Current (ID) :

7.1A

Termination :

SMD/SMT

Peak Reflow Temperature (Cel) :

260

Drain to Source Breakdown Voltage :

30V

Terminal Form :

Gull wing

FET Type :

2 N-Channel (Dual)

Number of Pins :

8

Turn On Delay Time :

2.5 ns

Vgs(th) (Max) @ Id :

3V @ 250µA