ZXMN3AMCTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Input Capacitance (Ciss) (Max) @ Vds :

190pF @ 25V

Case Connection :

DRAIN

FET Type :

2 N-Channel (Dual)

Package / Case :

8-VDFN Exposed Pad

Fall Time (Typ) :

2.9 ns

Mount :

Surface Mount

Series :

Automotive, AEC-Q101

Operating Mode :

ENHANCEMENT MODE

Published :

2010

Pin Count :

8

Element Configuration :

Dual

Turn On Delay Time :

1.7 ns

JESD-609 Code :

e4

Transistor Element Material :

SILICON

Factory Lead Time :

36 Weeks

Drain to Source Breakdown Voltage :

30V

Rise Time :

2.3ns

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

6.6 ns

Max Power Dissipation :

1.7W

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

2

Peak Reflow Temperature (Cel) :

260

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Feature :

Standard

Pulsed Drain Current-Max (IDM) :

13A

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Power Dissipation :

2.45W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminations :

8

Continuous Drain Current (ID) :

3.7A

Additional Feature :

High Reliability

Pbfree Code :

yes

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

120m Ω @ 2.5A, 10V

Mounting Type :

Surface Mount

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Time@Peak Reflow Temperature-Max (s) :

40

Vgs(th) (Max) @ Id :

3V @ 250µA

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

3.7A Ta

Number of Pins :

8

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

2.3nC @ 4.5V