ZXMN3AMCTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rise Time :

2.3ns

ECCN Code :

EAR99

Max Power Dissipation :

1.7W

Time@Peak Reflow Temperature-Max (s) :

40

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

190pF @ 25V

Turn On Delay Time :

1.7 ns

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Additional Feature :

High Reliability

Drain to Source Breakdown Voltage :

30V

Gate to Source Voltage (Vgs) :

20V

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e4

Number of Elements :

2

Pulsed Drain Current-Max (IDM) :

13A

Published :

2010

Rds On (Max) @ Id, Vgs :

120m Ω @ 2.5A, 10V

REACH SVHC :

No SVHC

Factory Lead Time :

36 Weeks

Number of Pins :

8

Series :

Automotive, AEC-Q101

Pin Count :

8

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Case Connection :

DRAIN

Element Configuration :

Dual

Fall Time (Typ) :

2.9 ns

Mounting Type :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package / Case :

8-VDFN Exposed Pad

Number of Terminations :

8

Current - Continuous Drain (Id) @ 25°C :

3.7A Ta

Packaging :

Tape and Reel (TR)

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

FET Feature :

Standard

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

2.3nC @ 4.5V

Continuous Drain Current (ID) :

3.7A

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

3V @ 250µA

Power Dissipation :

2.45W

Turn-Off Delay Time :

6.6 ns

FET Type :

2 N-Channel (Dual)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON