ZXMN3A06DN8TC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Continuous Drain Current (ID) :

4.9A

Mounting Type :

Surface Mount

Number of Elements :

2

Turn On Delay Time :

3 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rds On (Max) @ Id, Vgs :

35m Ω @ 9A, 10V

Power - Max :

1.8W

Transistor Element Material :

SILICON

Power Dissipation :

1.25W

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.035Ohm

Weight :

73.992255mg

Voltage - Rated DC :

30V

Vgs(th) (Max) @ Id :

1V @ 250μA (Min)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Width :

4mm

Gate Charge (Qg) (Max) @ Vgs :

17.5nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

40

Gate to Source Voltage (Vgs) :

20V

Length :

5mm

Current Rating :

4.8A

Lead Free :

Lead Free

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Terminal Finish :

MATTE TIN

FET Feature :

Logic Level Gate

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Number of Terminations :

8

Qualification Status :

Not Qualified

Number of Channels :

2

Height :

1.5mm

Terminal Form :

Gull wing

Max Power Dissipation :

1.25W

Published :

2002

Turn-Off Delay Time :

21.6 ns

Rise Time :

6.4ns

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

796pF @ 25V

Number of Pins :

8

Peak Reflow Temperature (Cel) :

260

Drain to Source Breakdown Voltage :

30V

FET Type :

2 N-Channel (Dual)

RoHS Status :

RoHS Compliant

Fall Time (Typ) :

6.4 ns

Pin Count :

8

JESD-609 Code :

e3